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Title:
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Forecasting noise and radiation hardness of CMOS front-end electronics beyond the 100 nm frontier
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http://hdl.handle.net/10446/24192
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| Suggested citation: | RE, VALERIO, GAIONI, LUIGI, MANGHISONI, MASSIMO, RATTI, LODOVICO, TRAVERSI, GIANLUCA, (2010). Forecasting noise and radiation hardness of CMOS front-end electronics beyond the 100 nm frontier. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 617 (1-3), 358- 361. doi: 10.1016/j.nima.2009.09.098. Retrieved from http://hdl.handle.net/10446/24192 |
| Author⁄s: | RE, VALERIO
GAIONI, LUIGI
MANGHISONI, MASSIMO
RATTI, LODOVICO
TRAVERSI, GIANLUCA |
| Type of content: | journal article - articolo |
| Language: | eng |
| Date issued: | 2010 |
| DOI: | 10.1016/j.nima.2009.09.098 |
| Publication available at: | http://www.journals.elsevier.com/nuclear-instruments-and-methods-in-physics-research-section-a-accelerators-spectrometers-detectors-and-associated-equipment |
| Is part of: | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
| Vol. : | 617 |
| Issue: | 1-3 |
| From p. : | 358 |
| to p. : | 361 |
| Keywords: | CMOS; microelectronics; noise; sensors; |
| Abstract: | The progress of industrial microelectronic technologies has already overtaken the 130 nm CMOS generation that is currently the focus of IC designers for new front-end chips in LHC upgrades and other detector applications. In a broader time span, sub-100 nm CMOS processes may become appealing for the design of very compact front-end systems with advanced integrated functionalities. This is especially true in the case of pixel detectors, both for monolithic devices (MAPS) and for hybrid implementations where a high resistivity sensor is connected to a CMOS readout chip. Technologies beyond the 100 nm frontier have peculiar features, such as the evolution of the device gate material to reduce tunneling currents through the thin dielectric. These new physical device parameters may impact on functional properties such as noise and radiation hardness. On the basis of experimental data relevant to commercial devices, this work studies potential advantages and challenges associated to the design of low-noise and rad-hard analog circuits in these aggressively scaled technologies. |
| In: | Journal contributions - Contributi su rivista scientifica
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