This paper presents the results of the experimental characterization of the channel thermal noise in MOSFETs belonging to a submicron gate process, with minimum gate length L = 0.35 um. The data are compared with a noise model taking into account short-channel effects such as velocity saturation and hot carriers. The contribution of gate and substrate parasitic resistors is also evaluated and included in the model. The analysis is carried out for devices with various gate geometries, investigating the behavior of the noise-related parameters in the range of small gate-to-source overdrive voltages, which is of major concern for low-power circuits.

(2001). Experimental study and modeling of the white noise sources in submicron P- and N-MOSFETs [journal article - articolo]. In IEEE TRANSACTIONS ON NUCLEAR SCIENCE. Retrieved from http://hdl.handle.net/10446/111214

Experimental study and modeling of the white noise sources in submicron P- and N-MOSFETs

Re, Valerio;Manghisoni, Massimo;SVELTO, Francesco
2001-01-01

Abstract

This paper presents the results of the experimental characterization of the channel thermal noise in MOSFETs belonging to a submicron gate process, with minimum gate length L = 0.35 um. The data are compared with a noise model taking into account short-channel effects such as velocity saturation and hot carriers. The contribution of gate and substrate parasitic resistors is also evaluated and included in the model. The analysis is carried out for devices with various gate geometries, investigating the behavior of the noise-related parameters in the range of small gate-to-source overdrive voltages, which is of major concern for low-power circuits.
journal article - articolo
2001
Re, Valerio; Bietti, I; Castello, R; Manghisoni, Massimo; Speziali, V; Svelto, Francesco
(2001). Experimental study and modeling of the white noise sources in submicron P- and N-MOSFETs [journal article - articolo]. In IEEE TRANSACTIONS ON NUCLEAR SCIENCE. Retrieved from http://hdl.handle.net/10446/111214
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10446/111214
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