This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity Large Hadron Collider at CERN that will require highly improved radiation-tolerant tracking systems.
(2018). Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs . Retrieved from http://hdl.handle.net/10446/159153
Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs
Mattiazzo, Serena;
2018-01-01
Abstract
This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity Large Hadron Collider at CERN that will require highly improved radiation-tolerant tracking systems.File allegato/i alla scheda:
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