Deep N-well CMOS monolithic active pixel sensors (DNW MAPS) represent an alternative approach to signal processing in pixellated detectors for high energy physics experiments. Based on different resolution constraints, two prototype MAPS, suitable for applications requiring different detector pitch, have been developed and fabricated in 130 nm triple well CMOS technology.

(2007). Monolithic Active Pixel Sensors in a 130 nm Triple Well CMOS Technology [conference presentation - intervento a convegno]. Retrieved from http://hdl.handle.net/10446/21321

Monolithic Active Pixel Sensors in a 130 nm Triple Well CMOS Technology

MANGHISONI, Massimo;RE, Valerio;TRAVERSI, Gianluca;
2007-01-01

Abstract

Deep N-well CMOS monolithic active pixel sensors (DNW MAPS) represent an alternative approach to signal processing in pixellated detectors for high energy physics experiments. Based on different resolution constraints, two prototype MAPS, suitable for applications requiring different detector pitch, have been developed and fabricated in 130 nm triple well CMOS technology.
2007
Manghisoni, Massimo; Re, Valerio; Traversi, Gianluca; Andreoli, Claudio; Pozzati, Enrico; Ratti, Lodovico; Speziali, Valeria; Bettarini, Stefano; Calderini, Giovanni; Cenci, Riccardo; Forti, Francesco; Giorgi, Marcello; Morsani, Fabio; Rizzo, Giuliana; Neri, Nicola
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10446/21321
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