We present a comparative study of ionizing radiation effects in 0.18 and 0.25 um CMOS transistors, with the goal of evaluating the impact of device scaling in the design of low-noise rad-hard analog circuits. Device parameters were monitored before and after irradiation with 10 keV X-rays and 60Co gamma-rays and after subsequent annealing. The effects of different biasing conditions during irradiation and annealing are discussed. The results are used to point out the different radiation hardness properties of the examined technologies, belonging to different CMOS generations.
(2003). Comparison of Ionizing Radiation Effects in 0.18 and 0.25 um CMOS Technologies for Analog Applications [journal article - articolo]. In IEEE TRANSACTIONS ON NUCLEAR SCIENCE. Retrieved from http://hdl.handle.net/10446/111206
Comparison of Ionizing Radiation Effects in 0.18 and 0.25 um CMOS Technologies for Analog Applications
Manghisoni, Massimo;Re, Valerio;Traversi, Gianluca;
2003-01-01
Abstract
We present a comparative study of ionizing radiation effects in 0.18 and 0.25 um CMOS transistors, with the goal of evaluating the impact of device scaling in the design of low-noise rad-hard analog circuits. Device parameters were monitored before and after irradiation with 10 keV X-rays and 60Co gamma-rays and after subsequent annealing. The effects of different biasing conditions during irradiation and annealing are discussed. The results are used to point out the different radiation hardness properties of the examined technologies, belonging to different CMOS generations.| File | Dimensione del file | Formato | |
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