This paper presents a study of the ionizing radiation tolerance of analog parameters of 0.18-um CMOS transistors, in view of the application to the design of front-end integrated circuits for detectors in high-energy physics experiments. Static, signal, and noise performances of devices with various gate dimensions were monitored before and after irradiation up to a 300-kGy(Si) total dose of 60 Co gamma-rays. Different device biasing conditions under irradiation were used, and the relevant results are discussed. A comparison with previous CMOS generations is carried out to evaluate the impact of device scaling on the radiation sensitivity.
(2002). Radiation hardness perspectives for the design of analog detector readout circuits in the 0.18-um CMOS generation [journal article - articolo]. In IEEE TRANSACTIONS ON NUCLEAR SCIENCE. Retrieved from http://hdl.handle.net/10446/111208
Radiation hardness perspectives for the design of analog detector readout circuits in the 0.18-um CMOS generation
Manghisoni, Massimo;Re, Valerio;
2002-01-01
Abstract
This paper presents a study of the ionizing radiation tolerance of analog parameters of 0.18-um CMOS transistors, in view of the application to the design of front-end integrated circuits for detectors in high-energy physics experiments. Static, signal, and noise performances of devices with various gate dimensions were monitored before and after irradiation up to a 300-kGy(Si) total dose of 60 Co gamma-rays. Different device biasing conditions under irradiation were used, and the relevant results are discussed. A comparison with previous CMOS generations is carried out to evaluate the impact of device scaling on the radiation sensitivity.File | Dimensione del file | Formato | |
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