This paper presents a study of the effects of ionizing radiation on devices belonging to a 0.18 um CMOS process, in view of applications to the design of front-end integrated circuits for detectors in high energy physics experiments. Static, signal and noise performances of devices with various gate dimensions were monitored before and after exposure to gamma-rays from a 60Co source up to a 300 kGy(Si) total dose.
(2003). Radiation effects on the noise parameters of a 0.18 mu m CMOS technology for detector front-end applications [journal article - articolo]. In NUCLEAR PHYSICS B-PROCEEDINGS SUPPLEMENTS. Retrieved from http://hdl.handle.net/10446/117947
Radiation effects on the noise parameters of a 0.18 mu m CMOS technology for detector front-end applications
Manghisoni, Massimo;Traversi, Gianluca
2003-01-01
Abstract
This paper presents a study of the effects of ionizing radiation on devices belonging to a 0.18 um CMOS process, in view of applications to the design of front-end integrated circuits for detectors in high energy physics experiments. Static, signal and noise performances of devices with various gate dimensions were monitored before and after exposure to gamma-rays from a 60Co source up to a 300 kGy(Si) total dose.| File | Dimensione del file | Formato | |
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