This work is concerned with the experimental characterization of a synchronous analog processor with zero dead time developed in a 65 nm CMOS technology, conceived for pixel detectors at the HL-LHC experiment upgrades. It includes a low noise, fast charge sensitive amplifier with detector leakage compensation circuit, and a compact, single ended comparator able to correctly process hits belonging to two consecutive bunch crossing periods. A 2-bit Flash ADC is exploited for digital conversion immediately after the preamplifier. A description of the circuits integrated in the front-end processor and the initial characterization results are provided.
(2018). Design and test of a 65nm CMOS front-end with zero dead time for next generation pixel detectors . In POS PROCEEDINGS OF SCIENCE. Retrieved from http://hdl.handle.net/10446/129958
Design and test of a 65nm CMOS front-end with zero dead time for next generation pixel detectors
Gaioni, L.;Nodari, B.;Re, V.;
2018-01-01
Abstract
This work is concerned with the experimental characterization of a synchronous analog processor with zero dead time developed in a 65 nm CMOS technology, conceived for pixel detectors at the HL-LHC experiment upgrades. It includes a low noise, fast charge sensitive amplifier with detector leakage compensation circuit, and a compact, single ended comparator able to correctly process hits belonging to two consecutive bunch crossing periods. A 2-bit Flash ADC is exploited for digital conversion immediately after the preamplifier. A description of the circuits integrated in the front-end processor and the initial characterization results are provided.File | Dimensione del file | Formato | |
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