The kinetics of structural changes of Ti-W oxide thin films has been studied by X-ray diffraction and Raman spectroscopy. The XRD patterns were measured after each annealing treatment. As the number of annealing treatments increased, a progressive ordering of the as-grown amorphous film was observed by XRD and confirmed by Raman measurements. An explanation of the ordering is given in terms of segregation of Ti impurities at the surface.
(1996). Kinetics of disorder-order transition of Ti-W oxide thin-film sensors [journal article - articolo]. In SENSORS AND ACTUATORS. B, CHEMICAL. Retrieved from http://hdl.handle.net/10446/131036
Kinetics of disorder-order transition of Ti-W oxide thin-film sensors
Natali Sora, Isabella;
1996-01-01
Abstract
The kinetics of structural changes of Ti-W oxide thin films has been studied by X-ray diffraction and Raman spectroscopy. The XRD patterns were measured after each annealing treatment. As the number of annealing treatments increased, a progressive ordering of the as-grown amorphous film was observed by XRD and confirmed by Raman measurements. An explanation of the ordering is given in terms of segregation of Ti impurities at the surface.| File | Dimensione del file | Formato | |
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