This work is concerned with the characterization of a bandgap reference circuit, fabricated in a commercial 65 nm CMOS technology, designed for applications to HL-LHC experiments. Measurement results show a temperature coefficient of about 16 ppm/ C over a temperature range of 140 C (from to 100 C) and a variation of 1.6% for V from 1.08 to 1.32 V. The mean value of the bandgap output is about 400 mV, with a 5% maximum shift when exposed to a Total Ionizing Dose (TID) around 1 Grad (SiO). The power consumption is 165 W at room temperature, with a core area of 0.02835 mm.
(2020). A Rad-Hard Bandgap Voltage Reference for High Energy Physics Experiments . Retrieved from http://hdl.handle.net/10446/164960
A Rad-Hard Bandgap Voltage Reference for High Energy Physics Experiments
Traversi, G.;Gaioni, L.;Manghisoni, M.;Pezzoli, M.;Re, V.;Riceputi, E.;
2020-01-01
Abstract
This work is concerned with the characterization of a bandgap reference circuit, fabricated in a commercial 65 nm CMOS technology, designed for applications to HL-LHC experiments. Measurement results show a temperature coefficient of about 16 ppm/ C over a temperature range of 140 C (from to 100 C) and a variation of 1.6% for V from 1.08 to 1.32 V. The mean value of the bandgap output is about 400 mV, with a 5% maximum shift when exposed to a Total Ionizing Dose (TID) around 1 Grad (SiO). The power consumption is 165 W at room temperature, with a core area of 0.02835 mm.| File | Dimensione del file | Formato | |
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