In the framework of the PixFEL project, a readout chip for pixel sensors has been designed and fabricated in a 65 nm CMOS technology. The PixFEL detector is intended for application to coherent X-ray diffraction imaging (CXDI) at the next generation free electron lasers (FELs). This paper will present a characterization of PFM3's signal chain first stage. Characterization data has been collected from the charge sensitive amplifier (CSA) stage, implementing a dynamic compression of the input signal. Measurements demonstrating the validity of the dynamic compression feature for various gain settings (1 keV, 2keV and 3keV) and temperatures-40 °C to 70 °C are shown.

(2019). Characterization of PFM3, a 32×32 readout chip for PixFEL X-ray imager . Retrieved from http://hdl.handle.net/10446/168530

Characterization of PFM3, a 32×32 readout chip for PixFEL X-ray imager

Pezzoli, M.;Manghisoni, M.;Re, V.;Riceputi, E.;Traversi, G.
2019-01-01

Abstract

In the framework of the PixFEL project, a readout chip for pixel sensors has been designed and fabricated in a 65 nm CMOS technology. The PixFEL detector is intended for application to coherent X-ray diffraction imaging (CXDI) at the next generation free electron lasers (FELs). This paper will present a characterization of PFM3's signal chain first stage. Characterization data has been collected from the charge sensitive amplifier (CSA) stage, implementing a dynamic compression of the input signal. Measurements demonstrating the validity of the dynamic compression feature for various gain settings (1 keV, 2keV and 3keV) and temperatures-40 °C to 70 °C are shown.
2019
Pezzoli, Matteo; Lodola, L.; Manghisoni, Massimo; Morsani, F.; Ratti, L.; Re, Valerio; Riceputi, Elisa; Traversi, Gianluca
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10446/168530
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