We present a new approach to the design of monolithic active pixel sensors (MAPS) in CMOS technology. By exploiting the triple well option, available in modern deep-submicron processes, it was possible to implement at the pixel level a full analog signal processor and to increase the area of the sensing electrode. These two new features aim to address some limiting aspects of conventional MAPS, such as the read-out speed and the charge collection efficiency. We report on the characterization of the first prototype chip, in particular the calibration with soft X-rays and the response to ß-rays, demonstrating the capability of the sensor in detecting ionizing radiation.

A new approach to the design of monolithic active pixel detectors in 0.13 µm triple well CMOS technology

MANGHISONI, Massimo;RE, Valerio;TRAVERSI, Gianluca;
2006-01-01

Abstract

We present a new approach to the design of monolithic active pixel sensors (MAPS) in CMOS technology. By exploiting the triple well option, available in modern deep-submicron processes, it was possible to implement at the pixel level a full analog signal processor and to increase the area of the sensing electrode. These two new features aim to address some limiting aspects of conventional MAPS, such as the read-out speed and the charge collection efficiency. We report on the characterization of the first prototype chip, in particular the calibration with soft X-rays and the response to ß-rays, demonstrating the capability of the sensor in detecting ionizing radiation.
journal article - articolo
2006
Bettarini, S.; Batignani, G.; Calderini, G.; Carpinelli, M.; Cenci, R.; Forti, F.; Giorgi, M. A.; Lusiani, A.; Marchiori, G.; Morsani, F.; Neri, N.; P...espandi
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10446/20137
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