This paper presents a study of the ionizing radiation tolerance of 0.13 /spl mu/m CMOS transistors, in view of the application to the design of rad-hard analog integrated circuits. Static, signal and noise parameters of the devices were monitored before and after irradiation with /sup 60/Co /spl gamma/-rays at a 10 Mrad total ionizing dose. The effects on key parameters such as threshold voltage shift and 1/f noise are studied and compared with the behavior under irradiation of devices in previous CMOS generations.

(2006). Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology [journal article - articolo]. In IEEE TRANSACTIONS ON NUCLEAR SCIENCE. Retrieved from http://hdl.handle.net/10446/20139

Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology

Re, Valerio;Manghisoni, Massimo;Traversi, Gianluca
2006-01-01

Abstract

This paper presents a study of the ionizing radiation tolerance of 0.13 /spl mu/m CMOS transistors, in view of the application to the design of rad-hard analog integrated circuits. Static, signal and noise parameters of the devices were monitored before and after irradiation with /sup 60/Co /spl gamma/-rays at a 10 Mrad total ionizing dose. The effects on key parameters such as threshold voltage shift and 1/f noise are studied and compared with the behavior under irradiation of devices in previous CMOS generations.
journal article - articolo
2006
Re, Valerio; Manghisoni, Massimo; Ratti, Lodovico; Speziali, Valeria; Traversi, Gianluca
(2006). Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology [journal article - articolo]. In IEEE TRANSACTIONS ON NUCLEAR SCIENCE. Retrieved from http://hdl.handle.net/10446/20139
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10446/20139
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