This paper presents a study of the ionizing radiation tolerance of 0.13 /spl mu/m CMOS transistors, in view of the application to the design of rad-hard analog integrated circuits. Static, signal and noise parameters of the devices were monitored before and after irradiation with /sup 60/Co /spl gamma/-rays at a 10 Mrad total ionizing dose. The effects on key parameters such as threshold voltage shift and 1/f noise are studied and compared with the behavior under irradiation of devices in previous CMOS generations.
(2006). Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology [journal article - articolo]. In IEEE TRANSACTIONS ON NUCLEAR SCIENCE. Retrieved from http://hdl.handle.net/10446/20139
Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology
Re, Valerio;Manghisoni, Massimo;Traversi, Gianluca
2006-01-01
Abstract
This paper presents a study of the ionizing radiation tolerance of 0.13 /spl mu/m CMOS transistors, in view of the application to the design of rad-hard analog integrated circuits. Static, signal and noise parameters of the devices were monitored before and after irradiation with /sup 60/Co /spl gamma/-rays at a 10 Mrad total ionizing dose. The effects on key parameters such as threshold voltage shift and 1/f noise are studied and compared with the behavior under irradiation of devices in previous CMOS generations.Pubblicazioni consigliate
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