Deep N-well CMOS monolithic active pixel sensors (DNW MAPS) represent an alternative approach to signal processing in pixellated detectors for high energy physics experiments. Based on different resolution constraints, two prototype MAPS, suitable for applications requiring different detector pitch, have been developed and fabricated in 130 nm triple well CMOS technology.
(2007). Monolithic Active Pixel Sensors in a 130 nm Triple Well CMOS Technology [conference presentation - intervento a convegno]. Retrieved from http://hdl.handle.net/10446/21321
Monolithic Active Pixel Sensors in a 130 nm Triple Well CMOS Technology
MANGHISONI, Massimo;RE, Valerio;TRAVERSI, Gianluca;
2007-01-01
Abstract
Deep N-well CMOS monolithic active pixel sensors (DNW MAPS) represent an alternative approach to signal processing in pixellated detectors for high energy physics experiments. Based on different resolution constraints, two prototype MAPS, suitable for applications requiring different detector pitch, have been developed and fabricated in 130 nm triple well CMOS technology.File allegato/i alla scheda:
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