The development of 3D vertical integration in the microelectronic industry brings along significant advantages for pixelated semiconductor radiation sensors in cutting-edge scientific experiments at high luminosity particle accelerators and advanced X-ray sources. These applications set very demanding requirements on the performance of sensors and their readout electronics, in terms of pixel pitch, radiation tolerance, signal-to-noise ratio and capability of handling very high data rates. 3D vertical integration of two or more layers with sensors and CMOS devices naturally leads the designer towards extending pixel-level processing functionalities and achieving novel structures where each layer is optimized for a specific function. This paper reviews the efforts towards the development of novel vertically integrated pixel sensors and discusses the challenges that are being tackled to qualify these devices for actual applications.

(2011). 3D vertical integration technologies for advanced semiconductor radiation sensors and readout electronics [conference presentation - intervento a convegno]. Retrieved from http://hdl.handle.net/10446/25302

3D vertical integration technologies for advanced semiconductor radiation sensors and readout electronics

RE, Valerio
2011-01-01

Abstract

The development of 3D vertical integration in the microelectronic industry brings along significant advantages for pixelated semiconductor radiation sensors in cutting-edge scientific experiments at high luminosity particle accelerators and advanced X-ray sources. These applications set very demanding requirements on the performance of sensors and their readout electronics, in terms of pixel pitch, radiation tolerance, signal-to-noise ratio and capability of handling very high data rates. 3D vertical integration of two or more layers with sensors and CMOS devices naturally leads the designer towards extending pixel-level processing functionalities and achieving novel structures where each layer is optimized for a specific function. This paper reviews the efforts towards the development of novel vertically integrated pixel sensors and discusses the challenges that are being tackled to qualify these devices for actual applications.
2011
Re, Valerio
File allegato/i alla scheda:
File Dimensione del file Formato  
RE_IWASI_2011.pdf

accesso aperto

Descrizione: publisher's version - versione dell'editore
Dimensione del file 216.87 kB
Formato Adobe PDF
216.87 kB Adobe PDF Visualizza/Apri
Pubblicazioni consigliate

Aisberg ©2008 Servizi bibliotecari, Università degli studi di Bergamo | Terms of use/Condizioni di utilizzo

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10446/25302
Citazioni
  • Scopus 1
  • ???jsp.display-item.citation.isi??? ND
social impact