Chemical solution techniques have been investigated for the growth of oxide buffer layers suitable for coated conductors and for the growth of YBa2Cu307 thin films. The growth conditions of Ce02 and BaZr03 have been investigated and a high quality epitaxy has been demonstrated on single crystalline substrates. Trifluoroacetate precursors have been used for growing YBa2Cu307 films (thickness of 250nm) on single crystal substrates. The kinetic hindrances for the formation of single phases have been investigated by means of Raman spectroscopy and Fluorine analysis. After optimisation of the deposition and growth conditions very high critical currents have been demonstrated (Jcab=3.2 106 A/cm2 at 77K and 2,7 107A/cm2 at 5K).

(2003). Towards an all Chemical Solution Coated Conductor . Retrieved from https://hdl.handle.net/10446/275330

Towards an all Chemical Solution Coated Conductor

Cavallaro, A.;
2003-01-01

Abstract

Chemical solution techniques have been investigated for the growth of oxide buffer layers suitable for coated conductors and for the growth of YBa2Cu307 thin films. The growth conditions of Ce02 and BaZr03 have been investigated and a high quality epitaxy has been demonstrated on single crystalline substrates. Trifluoroacetate precursors have been used for growing YBa2Cu307 films (thickness of 250nm) on single crystal substrates. The kinetic hindrances for the formation of single phases have been investigated by means of Raman spectroscopy and Fluorine analysis. After optimisation of the deposition and growth conditions very high critical currents have been demonstrated (Jcab=3.2 106 A/cm2 at 77K and 2,7 107A/cm2 at 5K).
2003
Castano, O.; Cavallaro, Andrea; Palau, A.; Gonzalez, J.; Rossell, M.; Puig, T.; Sandiumenge, F.; Mestres, N.; Pinol, S.; Obradors, X.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10446/275330
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