Cellular automata analysis of the structure of carrier lifetime and its multicausal nonlinear dependence in semiconductor lasers

The dependence of spontaneous carrier lifetime Ts suggests new experiments for the determination of microscopic parameters of the active region material. Cavity geometry's are time evolving structures due to the high non- linearities typical of the elementary processes involved. A computational approach basically different from the differential equation one, is being developed. The results obtained by this approach are compared with the analytical and the experimental ones, thus leading to the possible characterization of devices just at the wafer level. Finally complementary information are extracted from relaxation oscillations.