Single-photon avalanche diode (SPAD) arrays fabricated in a 180-nm CMOS technology with a high-voltage option have been exposed to calibrated neutron and X-ray sources to evaluate their radiation tolerance. The technology is being investigated in view of the design of low material budget detectors for charged particle tracking based on the coincidence of the signals coming from two or more overlapping layers of SPAD sensors. Each element in the array is a monolithic detector including the processing electronics together with the diode in the same substrate. Different sensor dimensions and structures have been implemented in the test chip to thoroughly explore the technology features. This paper will present and discuss the results from the characterization, in terms of dark count rate, of SPAD arrays irradiated with X-ray doses reaching 1 Mrad(SiO 2 ) and with neutron fluences up to 10 11 1-MeV neutron equivalent cm -2 .

(2019). Dark Count Rate Degradation in CMOS SPADs Exposed to X-Rays and Neutrons [journal article - articolo]. In IEEE TRANSACTIONS ON NUCLEAR SCIENCE. Retrieved from http://hdl.handle.net/10446/159151

Dark Count Rate Degradation in CMOS SPADs Exposed to X-Rays and Neutrons

Mattiazzo, S.;
2019-01-01

Abstract

Single-photon avalanche diode (SPAD) arrays fabricated in a 180-nm CMOS technology with a high-voltage option have been exposed to calibrated neutron and X-ray sources to evaluate their radiation tolerance. The technology is being investigated in view of the design of low material budget detectors for charged particle tracking based on the coincidence of the signals coming from two or more overlapping layers of SPAD sensors. Each element in the array is a monolithic detector including the processing electronics together with the diode in the same substrate. Different sensor dimensions and structures have been implemented in the test chip to thoroughly explore the technology features. This paper will present and discuss the results from the characterization, in terms of dark count rate, of SPAD arrays irradiated with X-ray doses reaching 1 Mrad(SiO 2 ) and with neutron fluences up to 10 11 1-MeV neutron equivalent cm -2 .
articolo
2019
Ratti, L.; Brogi, P.; Collazuol, G.; Dalla Betta, G. -F.; Ficorella, A.; Lodola, L.; Marrocchesi, P. S.; Mattiazzo, Serena; Morsani, F.; Musacci, M.; Pancheri, L.; Vacchi, C.
(2019). Dark Count Rate Degradation in CMOS SPADs Exposed to X-Rays and Neutrons [journal article - articolo]. In IEEE TRANSACTIONS ON NUCLEAR SCIENCE. Retrieved from http://hdl.handle.net/10446/159151
File allegato/i alla scheda:
File Dimensione del file Formato  
ratti2019.pdf

Solo gestori di archivio

Versione: publisher's version - versione editoriale
Licenza: Licenza default Aisberg
Dimensione del file 1.61 MB
Formato Adobe PDF
1.61 MB Adobe PDF   Visualizza/Apri
Pubblicazioni consigliate

Aisberg ©2008 Servizi bibliotecari, Università degli studi di Bergamo | Terms of use/Condizioni di utilizzo

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10446/159151
Citazioni
  • Scopus 14
  • ???jsp.display-item.citation.isi??? 14
social impact