The LePix project aims at developing monolithic pixel detectors in a 90 nm CMOS technology ported on moderate resistivity substrate. The radiation tolerance of the base material, which is an order of magnitude higher doped than standard high resistivity detectors, and which underwent the full advanced CMOS process, has been investigated. Diodes of about 1 mm2 and pixel matrices were irradiated with neutrons at fluences from 1012 n/cm2 to and characterized using CV and IV measurements. Matrices have also been irradiated with Xrays and withstand at least 10 Mrad.
(2013). Radiation tolerance of a moderate resistivity substrate in a modern CMOS process [journal article - articolo]. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. Retrieved from http://hdl.handle.net/10446/186953
Radiation tolerance of a moderate resistivity substrate in a modern CMOS process
Mattiazzo, S.;
2013-01-01
Abstract
The LePix project aims at developing monolithic pixel detectors in a 90 nm CMOS technology ported on moderate resistivity substrate. The radiation tolerance of the base material, which is an order of magnitude higher doped than standard high resistivity detectors, and which underwent the full advanced CMOS process, has been investigated. Diodes of about 1 mm2 and pixel matrices were irradiated with neutrons at fluences from 1012 n/cm2 to and characterized using CV and IV measurements. Matrices have also been irradiated with Xrays and withstand at least 10 Mrad.File | Dimensione del file | Formato | |
---|---|---|---|
Radiation tolerance of a moderate resistivity substrate in a modern CMOS process 2.pdf
Solo gestori di archivio
Versione:
publisher's version - versione editoriale
Licenza:
Licenza default Aisberg
Dimensione del file
850.37 kB
Formato
Adobe PDF
|
850.37 kB | Adobe PDF | Visualizza/Apri |
Pubblicazioni consigliate
Aisberg ©2008 Servizi bibliotecari, Università degli studi di Bergamo | Terms of use/Condizioni di utilizzo