In this contribution we describe how single event effect (SEE) studies will be performed with the ion electron emission microscope (IEEM) of the SIRAD irradiation facility located at the INFN Legnaro Laboratory. The IEEM will be used to locate with micrometric precision the impact points of impinging ions that give rise to SEE in an electronic device under test (DUT). In the IEEM technique the ion beam is not microfocused: the position of single ion impact is reconstructed by locating the secondary electron emission points on the DUT surface. We briefly review the original solutions under implementation at SIRAD, such as the opto-electronic approach used to reconstruct the secondary electron emission points by means of a fast, high-resolution imaging of point-like light sources, and a new IEEM test system under development based on a commercial memory array sensitive to single event upsets.

(2005). Ion electron emission microscopy at SIRAD . In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS. Retrieved from http://hdl.handle.net/10446/186976

Ion electron emission microscopy at SIRAD

Mattiazzo, S.;
2005-01-01

Abstract

In this contribution we describe how single event effect (SEE) studies will be performed with the ion electron emission microscope (IEEM) of the SIRAD irradiation facility located at the INFN Legnaro Laboratory. The IEEM will be used to locate with micrometric precision the impact points of impinging ions that give rise to SEE in an electronic device under test (DUT). In the IEEM technique the ion beam is not microfocused: the position of single ion impact is reconstructed by locating the secondary electron emission points on the DUT surface. We briefly review the original solutions under implementation at SIRAD, such as the opto-electronic approach used to reconstruct the secondary electron emission points by means of a fast, high-resolution imaging of point-like light sources, and a new IEEM test system under development based on a commercial memory array sensitive to single event upsets.
2005
Bisello, D.; Candelori, A.; Giubilato, P.; Kaminsky, A.; Mattiazzo, Serena; Nigro, M.; Pantano, D.; Rando, R.; Tessaro, M.; Wyss, J.; Bertazzoni, S.; Di Giovenale, D.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10446/186976
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