We developed and characterized Monolithic pixel detectors in deep-submicron Fully Depleted (FD) Silicon On Insulator (SOI) technology. This paper presents the first studies of total dose effects from ionizing radiation performed on single transistor test structures. This work shows how the substrate bias condition during irradiation heavily affects the resulting radiation damage.
(2010). Total Dose Effects on a FD-SOI Technology for Monolithic Pixel Sensors [journal article - articolo]. In IEEE TRANSACTIONS ON NUCLEAR SCIENCE. Retrieved from http://hdl.handle.net/10446/187046
Total Dose Effects on a FD-SOI Technology for Monolithic Pixel Sensors
Mattiazzo, S.;
2010-01-01
Abstract
We developed and characterized Monolithic pixel detectors in deep-submicron Fully Depleted (FD) Silicon On Insulator (SOI) technology. This paper presents the first studies of total dose effects from ionizing radiation performed on single transistor test structures. This work shows how the substrate bias condition during irradiation heavily affects the resulting radiation damage.File allegato/i alla scheda:
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