This paper presents the results of the characterisation of a pixel sensor manufactured in SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single point resolution.
(2011). Characterisation of a pixel sensor in SOI technology for charged particle tracking [journal article - articolo]. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. Retrieved from http://hdl.handle.net/10446/187060
Characterisation of a pixel sensor in SOI technology for charged particle tracking
Mattiazzo, Serena;
2011-01-01
Abstract
This paper presents the results of the characterisation of a pixel sensor manufactured in SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single point resolution.| File | Dimensione del file | Formato | |
|---|---|---|---|
|
1-s2.0-S0168900211011727-main.pdf
Solo gestori di archivio
Versione:
publisher's version - versione editoriale
Licenza:
Licenza default Aisberg
Dimensione del file
467.83 kB
Formato
Adobe PDF
|
467.83 kB | Adobe PDF | Visualizza/Apri |
Pubblicazioni consigliate
Aisberg ©2008 Servizi bibliotecari, Università degli studi di Bergamo | Terms of use/Condizioni di utilizzo
