A new test methodology for the analysis of SEE in power MOSFET is presented. It is based on the combined use of an Ion Electron Emission Microscope (IEEM) and an experimental set-up which is able to acquire the drain signals associated to the impacts during the irradiation. The charge generation sensitivity map of a 200 V power MOSFET has been measured. It indicates the areas where the impacting particles generate the maximum charge. This map is strictly correlated with the sensitivity map of the device to SEB.
(2011). A new test methodology for an exhaustive study of single-event-effects on power MOSFETs [journal article - articolo]. In MICROELECTRONICS RELIABILITY. Retrieved from http://hdl.handle.net/10446/187066
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs
Mattiazzo, S.;
2011-01-01
Abstract
A new test methodology for the analysis of SEE in power MOSFET is presented. It is based on the combined use of an Ion Electron Emission Microscope (IEEM) and an experimental set-up which is able to acquire the drain signals associated to the impacts during the irradiation. The charge generation sensitivity map of a 200 V power MOSFET has been measured. It indicates the areas where the impacting particles generate the maximum charge. This map is strictly correlated with the sensitivity map of the device to SEB.| File | Dimensione del file | Formato | |
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