This paper reviews the R&D program on monolithic pixel sensors in silicon-on-insulator technology carried out by LBNL, the University and INFN, Padova and SCIPP-UCSC. The main issues addressed by the R&D, back-gating and radiation tolerance, are discussed together with the preliminary results from the characterization of the latest chip in this technology.
(2011). Tests of monolithic pixel detectors in SOI technology with depleted substrate [journal article - articolo]. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. Retrieved from http://hdl.handle.net/10446/187068
Tests of monolithic pixel detectors in SOI technology with depleted substrate
Mattiazzo, Serena;
2011-01-01
Abstract
This paper reviews the R&D program on monolithic pixel sensors in silicon-on-insulator technology carried out by LBNL, the University and INFN, Padova and SCIPP-UCSC. The main issues addressed by the R&D, back-gating and radiation tolerance, are discussed together with the preliminary results from the characterization of the latest chip in this technology.| File | Dimensione del file | Formato | |
|---|---|---|---|
|
1-s2.0-S0168900210027324-main.pdf
Solo gestori di archivio
Versione:
publisher's version - versione editoriale
Licenza:
Licenza default Aisberg
Dimensione del file
787.37 kB
Formato
Adobe PDF
|
787.37 kB | Adobe PDF | Visualizza/Apri |
Pubblicazioni consigliate
Aisberg ©2008 Servizi bibliotecari, Università degli studi di Bergamo | Terms of use/Condizioni di utilizzo
