The total ionizing dose (TID) response of 65-nm CMOS transistors is studied by 10-keV x-ray and 3-MeV protons up to 1 Grad (SiO2) total dose. The degradation levels induced by the two radiation sources are different to some extent. The main reason is the interface dose enhancement due to the thin gate oxide and the low energy photons. The holes’ recombination also contributes to the difference. Compared to these two mechanisms, the influence of the dose rate is negligible.
(2016). Comparison of radiation degradation induced by x-ray and 3-MeV protons in 65-nm CMOS transistors [journal article - articolo]. In CHINESE PHYSICS B. Retrieved from http://hdl.handle.net/10446/187080
Comparison of radiation degradation induced by x-ray and 3-MeV protons in 65-nm CMOS transistors
Mattiazzo, Serena;
2016-01-01
Abstract
The total ionizing dose (TID) response of 65-nm CMOS transistors is studied by 10-keV x-ray and 3-MeV protons up to 1 Grad (SiO2) total dose. The degradation levels induced by the two radiation sources are different to some extent. The main reason is the interface dose enhancement due to the thin gate oxide and the low energy photons. The holes’ recombination also contributes to the difference. Compared to these two mechanisms, the influence of the dose rate is negligible.| File | Dimensione del file | Formato | |
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Comparison of radiation degradation induced by x-ray and 3Mev protons in 65nm transistors.pdf
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