The paper reports the 65nm CMOS transistors exposed to 3MeV protons to study the total ionizing dose (TID) effect and displacement damage (DD). The proton fluence of 7×1014 p/cm2 is equivalent to 9.5MGy(SiO2) total dose and 7.7×1015 n/cm2 1MeV neutron equivalent fluence. Under this unprecedented hostile environment, we observed that the degradation of 65nm CMOS transistors was mainly due to TID effect. Additional results from 10keV X-ray irradiation implied no visible DD-induced degradation could be observed even for this extremely high proton fluence.
(2015). Investigation of total ionizing dose effect and displacement damage in 65nm CMOS transistors exposed to 3MeV protons [journal article - articolo]. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. Retrieved from http://hdl.handle.net/10446/187102
Investigation of total ionizing dose effect and displacement damage in 65nm CMOS transistors exposed to 3MeV protons
Mattiazzo, Serena;
2015-01-01
Abstract
The paper reports the 65nm CMOS transistors exposed to 3MeV protons to study the total ionizing dose (TID) effect and displacement damage (DD). The proton fluence of 7×1014 p/cm2 is equivalent to 9.5MGy(SiO2) total dose and 7.7×1015 n/cm2 1MeV neutron equivalent fluence. Under this unprecedented hostile environment, we observed that the degradation of 65nm CMOS transistors was mainly due to TID effect. Additional results from 10keV X-ray irradiation implied no visible DD-induced degradation could be observed even for this extremely high proton fluence.File | Dimensione del file | Formato | |
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Investigation of total ionizing dose effect and displacement damage in 65nm CMOS transistors exposed to 3MeV protons.pdf
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