In this paper we review on radiation tolerance studies on a Monolithic Pixels Detector fabricated in a commercial Silicon On Insulator (SOI) technology and we report on the first application of Ion Electron Emission Microscopy to obtain a micrometric map of its sensitivity to Single Event Upset.
(2011). First results in micromapping the sensitivity to SEE of an electronic device in a SOI technology at the LNL IEEM [journal article - articolo]. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. Retrieved from http://hdl.handle.net/10446/187110
First results in micromapping the sensitivity to SEE of an electronic device in a SOI technology at the LNL IEEM
Mattiazzo, S.;
2011-01-01
Abstract
In this paper we review on radiation tolerance studies on a Monolithic Pixels Detector fabricated in a commercial Silicon On Insulator (SOI) technology and we report on the first application of Ion Electron Emission Microscopy to obtain a micrometric map of its sensitivity to Single Event Upset.| File | Dimensione del file | Formato | |
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