Using the Y–function method, this paper experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel mobility of a commercial 28-nm bulk CMOS process.

(2018). Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses . Retrieved from http://hdl.handle.net/10446/187149

Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses

Mattiazzo, S.;
2018-01-01

Abstract

Using the Y–function method, this paper experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel mobility of a commercial 28-nm bulk CMOS process.
2018
Zhang, C. -M.; Jazaeri, F.; Borghello, G.; Mattiazzo, Serena; Baschirotto, A.; Enz, C.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10446/187149
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