This paper presents irradiation studies performed on a CMOS monolithic pixel sensor prototype implementing different optimizations of the pixel cell aimed at a superior radiation tolerance. Irradiations with 200 keV electrons up to a total dose of 1.1 Mrad have been performed in view of the utilization of such a design in Transmission Electron Microscopy (TEM) applications. Comparative irradiations were performed with 29 MeV protons up to a 2 Mrad total dose and with 1–14 MeV neutrons up to fluences in excess of 1013 neq cm−2. Experimental results show an improved performance of pixels designed with Enclosed Layout Transistor (ELT) rules and an optimized layout of the charge collecting diodes.
(2010). Radiation hardness studies on CMOS monolithic pixel sensors [journal article - articolo]. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. Retrieved from http://hdl.handle.net/10446/187161
Radiation hardness studies on CMOS monolithic pixel sensors
Battaglia, M.;Mattiazzo, S.;
2010-01-01
Abstract
This paper presents irradiation studies performed on a CMOS monolithic pixel sensor prototype implementing different optimizations of the pixel cell aimed at a superior radiation tolerance. Irradiations with 200 keV electrons up to a total dose of 1.1 Mrad have been performed in view of the utilization of such a design in Transmission Electron Microscopy (TEM) applications. Comparative irradiations were performed with 29 MeV protons up to a 2 Mrad total dose and with 1–14 MeV neutrons up to fluences in excess of 1013 neq cm−2. Experimental results show an improved performance of pixels designed with Enclosed Layout Transistor (ELT) rules and an optimized layout of the charge collecting diodes.| File | Dimensione del file | Formato | |
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