This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-on-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a low energy phosphorus implantation is performed on the back-plane. The response to X-rays from 2.12 to 8.6 keV is evaluated with fluorescence radiation at the LBNL Advanced Light Source.
(2012). Characterisation of a Thin Fully Depleted SOI Pixel Sensor with Soft X-ray Radiation [journal article - articolo]. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. Retrieved from http://hdl.handle.net/10446/187171
Characterisation of a Thin Fully Depleted SOI Pixel Sensor with Soft X-ray Radiation
Battaglia, Marco;Mattiazzo, Serena;
2012-01-01
Abstract
This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-on-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a low energy phosphorus implantation is performed on the back-plane. The response to X-rays from 2.12 to 8.6 keV is evaluated with fluorescence radiation at the LBNL Advanced Light Source.| File | Dimensione del file | Formato | |
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