We studied the TID response of I/O 65 nm MOSFETs, which are strong candidates for LHC upgrade. Enhanced radiation vulnerability in I/O transistors appeared, due to radiation-induced interface states and charge accumulation.
(2015). Radiation vulnerability in 65 nm CMOS I/O transistors after exposure to grad dose . Retrieved from http://hdl.handle.net/10446/187191
Radiation vulnerability in 65 nm CMOS I/O transistors after exposure to grad dose
Mattiazzo, Serena;
2015-01-01
Abstract
We studied the TID response of I/O 65 nm MOSFETs, which are strong candidates for LHC upgrade. Enhanced radiation vulnerability in I/O transistors appeared, due to radiation-induced interface states and charge accumulation.File allegato/i alla scheda:
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Radiation_Vulnerability_in_65_nm_CMOS_I_O_Transistors_after_Exposure_to_Grad_Dose.pdf
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