Radiation hardness tests of the CLARO8 ASIC, designed in AMS 0.35micron CMOS technology for the upgrade of the CERN LHCb RICH detectors, are presented, including measurements of total-ionizing dose and single event effects.

(2017). Radiation Hardness of the CLARO8 ASIC: a Fast Single-Photon Counting Chip for the LHCb Experiment at CERN . Retrieved from http://hdl.handle.net/10446/187211

Radiation Hardness of the CLARO8 ASIC: a Fast Single-Photon Counting Chip for the LHCb Experiment at CERN

Mattiazzo, Serena;
2017-01-01

Abstract

Radiation hardness tests of the CLARO8 ASIC, designed in AMS 0.35micron CMOS technology for the upgrade of the CERN LHCb RICH detectors, are presented, including measurements of total-ionizing dose and single event effects.
2017
Andreotti, Mirco; Baldini, Wander; Baszczyk, Mateusz; Calabrese, Roberto; Candelori, Andrea; Carniti, Paolo; Cassina, Lorenzo; Ramusino, Angelo; Cotta, ; Dorosz, Piotr; Fiorini, Massimiliano; Giachero, Andrea; Gotti, Claudio; Kucewicz, Wojciech; Luppi, Eleonora; Maino, Matteo; Malaguti, Roberto; Mattiazzo, Serena; Minzoni, Luca; Pappalardo, Luciano; Libero, ; Pessina, Gianluigi; Silvestrin, Luca; Tomassetti, Luca
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10446/187211
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