This article presents the design and experimental characterization of a low-noise analog readout channel implemented in a commercial 65-nm CMOS technology. The circuit targets the readout of large-area silicon-strip detectors for astroparticle physics tracker applications and is based on a charge-sensitive amplifier followed by a unipolar semi-Gaussian time-invariant filter. Dynamic signal compression is achieved by exploiting the nonlinear behavior of a dynamic-threshold MOS capacitor in the amplifier feedback network, providing a gain that decreases with increasing input signal and enabling a wide input dynamic range while maintaining high resolution at low deposited charge. The amplifier also incorporates an enhanced Krummenacher feedback network that, through an additional bulk-controlled device, compensates detector leakage currents up to 200 nA. The design criteria and circuit architecture are described, with emphasis on the dynamic-threshold capacitor and the improved charge restoration network. Experimental results are presented to validate and support the proposed design and architectural choices.

(2026). A 65-nm CMOS Readout Channel Based on a Charge Amplifier With DTMOS Feedback for Dynamic Signal Compression [journal article - articolo]. In IEEE TRANSACTIONS ON NUCLEAR SCIENCE. Retrieved from https://hdl.handle.net/10446/331171

A 65-nm CMOS Readout Channel Based on a Charge Amplifier With DTMOS Feedback for Dynamic Signal Compression

Ghislotti, Luca;Lazzaroni, Paolo;Manghisoni, Massimo;Re, Valerio;Riceputi, Elisa;
2026-01-01

Abstract

This article presents the design and experimental characterization of a low-noise analog readout channel implemented in a commercial 65-nm CMOS technology. The circuit targets the readout of large-area silicon-strip detectors for astroparticle physics tracker applications and is based on a charge-sensitive amplifier followed by a unipolar semi-Gaussian time-invariant filter. Dynamic signal compression is achieved by exploiting the nonlinear behavior of a dynamic-threshold MOS capacitor in the amplifier feedback network, providing a gain that decreases with increasing input signal and enabling a wide input dynamic range while maintaining high resolution at low deposited charge. The amplifier also incorporates an enhanced Krummenacher feedback network that, through an additional bulk-controlled device, compensates detector leakage currents up to 200 nA. The design criteria and circuit architecture are described, with emphasis on the dynamic-threshold capacitor and the improved charge restoration network. Experimental results are presented to validate and support the proposed design and architectural choices.
articolo
2026
Inglese
online
73
7
2664
2675
Settore IINF-01/A - Elettronica
Charge-sensitiveamplifier; CMOS; dynamic signal compression; dynamic-threshold MOSFET (DTMOS); frontend electronics, low noise
Ghislotti, Luca; Lazzaroni, Paolo; Manghisoni, Massimo; Re, Valerio; Riceputi, Elisa; Ratti, Lodovico
info:eu-repo/semantics/article
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(2026). A 65-nm CMOS Readout Channel Based on a Charge Amplifier With DTMOS Feedback for Dynamic Signal Compression [journal article - articolo]. In IEEE TRANSACTIONS ON NUCLEAR SCIENCE. Retrieved from https://hdl.handle.net/10446/331171
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6
1.1 Contributi in rivista - Journal contributions::1.1.01 Articoli/Saggi in rivista - Journal Articles/Essays
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10446/331171
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