The objective of this work is to design a high performance bandgap voltage reference circuit in a standard commercial 65nm CMOS technology capable of operating in harsh radiation environments. A prototype circuit based on three different devices (diode, bipolar transistor and MOSFET) was fabricated and tested. Measurement results show a temperature variation as low as ±3.4mV over a temperature range of 170 ° C (-30°C to 140°C) and a line regulation at room temperature of 5.2%/V. Measured V REF is 690mV±15mV (3σ) for 26 samples on the same wafer. Circuits correctly operate with supply voltages in the range from 1.32V down to 0.78V. A reference voltage shift of only 7.6mV (around 1.1%) was measured after irradiation with 10keV X-rays up to an integrated dose of 225Mrad (SiO2).

(2016). Characterization of bandgap reference circuits designed for high energy physics applications [journal article - articolo]. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. Retrieved from http://hdl.handle.net/10446/78357

Characterization of bandgap reference circuits designed for high energy physics applications

Traversi, Gianluca;Gaioni, Luigi;Manghisoni, Massimo;Mattiazzo, Serena;Re, Valerio;Riceputi, Elisa
2016-07-11

Abstract

The objective of this work is to design a high performance bandgap voltage reference circuit in a standard commercial 65nm CMOS technology capable of operating in harsh radiation environments. A prototype circuit based on three different devices (diode, bipolar transistor and MOSFET) was fabricated and tested. Measurement results show a temperature variation as low as ±3.4mV over a temperature range of 170 ° C (-30°C to 140°C) and a line regulation at room temperature of 5.2%/V. Measured V REF is 690mV±15mV (3σ) for 26 samples on the same wafer. Circuits correctly operate with supply voltages in the range from 1.32V down to 0.78V. A reference voltage shift of only 7.6mV (around 1.1%) was measured after irradiation with 10keV X-rays up to an integrated dose of 225Mrad (SiO2).
articolo
11-lug-2016
Traversi, Gianluca; De Canio, Francesco; Gaioni, Luigi; Manghisoni, Massimo; Mattiazzo, Serena; Ratti, Lodovico; Re, Valerio; Riceputi, Elisa
(2016). Characterization of bandgap reference circuits designed for high energy physics applications [journal article - articolo]. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. Retrieved from http://hdl.handle.net/10446/78357
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