This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity Large Hadron Collider at CERN that will require highly improved radiation-tolerant tracking systems.

(2018). Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs . Retrieved from http://hdl.handle.net/10446/159153

Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs

Mattiazzo, Serena;
2018-01-01

Abstract

This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity Large Hadron Collider at CERN that will require highly improved radiation-tolerant tracking systems.
2018
Zhang, Chun-Min; Jazaeri, Farzan; Borghello, Giulio; Mattiazzo, Serena; Baschirotto, Andrea; Enz, Christian
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10446/159153
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