In this paper, the total ionizing dose (TID) response of a commercial 28-nm high-k CMOS technology at ultrahigh doses is measured and discussed. The degradation of pMOSFETs depends not only on the channel width but also on the channel length. Short-channel pMOSFETs exhibit a higher TID tolerance compared to long ones. We attributed this effect to the presence of the halo implantations. For short-channel lengths, the drain halo can overlap the source one, increasing the average bulk doping along the channel. The higher bulk doping attenuates the radiation-induced degradation, improving the TID tolerance of short-channel transistors. The results are finally compared and discussed through technology computer-aided design simulations.

(2019). Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses [journal article - articolo]. In IEEE TRANSACTIONS ON NUCLEAR SCIENCE. Retrieved from http://hdl.handle.net/10446/159157

Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses

Mattiazzo, Serena;
2019-01-01

Abstract

In this paper, the total ionizing dose (TID) response of a commercial 28-nm high-k CMOS technology at ultrahigh doses is measured and discussed. The degradation of pMOSFETs depends not only on the channel width but also on the channel length. Short-channel pMOSFETs exhibit a higher TID tolerance compared to long ones. We attributed this effect to the presence of the halo implantations. For short-channel lengths, the drain halo can overlap the source one, increasing the average bulk doping along the channel. The higher bulk doping attenuates the radiation-induced degradation, improving the TID tolerance of short-channel transistors. The results are finally compared and discussed through technology computer-aided design simulations.
articolo
2019
Bonaldo, Stefano; Mattiazzo, Serena; Enz, Christian; Baschirotto, Andrea; Paccagnella, Alessandro; Jin, Xiaoming; Gerardin, Simone
(2019). Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses [journal article - articolo]. In IEEE TRANSACTIONS ON NUCLEAR SCIENCE. Retrieved from http://hdl.handle.net/10446/159157
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