We developed and characterized Monolithic pixel detectors in deep-submicron Fully Depleted (FD) Silicon On Insulator (SOI) technology. This paper presents the first studies of total dose effects from ionizing radiation performed on single transistor test structures. This work shows how the substrate bias condition during irradiation heavily affects the resulting radiation damage.
(2009). Total dose effects on deep-submicron SOI technology for Monolithic Pixel Sensor development . Retrieved from http://hdl.handle.net/10446/187221
Total dose effects on deep-submicron SOI technology for Monolithic Pixel Sensor development
Mattiazzo, Serena;
2009-01-01
Abstract
We developed and characterized Monolithic pixel detectors in deep-submicron Fully Depleted (FD) Silicon On Insulator (SOI) technology. This paper presents the first studies of total dose effects from ionizing radiation performed on single transistor test structures. This work shows how the substrate bias condition during irradiation heavily affects the resulting radiation damage.File allegato/i alla scheda:
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