MANGHISONI, Massimo
 Distribuzione geografica
Continente #
EU - Europa 41.333
NA - Nord America 15.712
AS - Asia 5.236
SA - Sud America 100
Continente sconosciuto - Info sul continente non disponibili 23
AF - Africa 20
OC - Oceania 9
Totale 62.433
Nazione #
GB - Regno Unito 18.464
US - Stati Uniti d'America 14.772
IE - Irlanda 7.859
IT - Italia 3.001
CN - Cina 2.996
RU - Federazione Russa 2.534
PL - Polonia 2.182
DE - Germania 2.103
FR - Francia 1.409
SE - Svezia 1.262
SG - Singapore 1.208
NL - Olanda 1.192
CA - Canada 935
UA - Ucraina 576
VN - Vietnam 440
AT - Austria 247
FI - Finlandia 200
EU - Europa 161
KR - Corea 150
IN - India 129
TR - Turchia 98
BR - Brasile 89
HK - Hong Kong 65
BE - Belgio 58
CH - Svizzera 57
CZ - Repubblica Ceca 57
ID - Indonesia 48
LT - Lituania 34
ES - Italia 33
JP - Giappone 22
MY - Malesia 22
BG - Bulgaria 15
IR - Iran 14
RO - Romania 11
PT - Portogallo 9
BD - Bangladesh 8
AU - Australia 6
GR - Grecia 6
LV - Lettonia 6
DK - Danimarca 5
LB - Libano 5
IL - Israele 4
SC - Seychelles 4
TW - Taiwan 4
UZ - Uzbekistan 4
AR - Argentina 3
BJ - Benin 3
BY - Bielorussia 3
DZ - Algeria 3
MD - Moldavia 3
NZ - Nuova Zelanda 3
PE - Perù 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AE - Emirati Arabi Uniti 2
AZ - Azerbaigian 2
CL - Cile 2
CY - Cipro 2
HR - Croazia 2
IQ - Iraq 2
LA - Repubblica Popolare Democratica del Laos 2
MA - Marocco 2
MU - Mauritius 2
MX - Messico 2
MZ - Mozambico 2
NO - Norvegia 2
PA - Panama 2
PH - Filippine 2
VE - Venezuela 2
A1 - Anonimo 1
AL - Albania 1
AM - Armenia 1
EC - Ecuador 1
EG - Egitto 1
ET - Etiopia 1
GN - Guinea 1
GT - Guatemala 1
HU - Ungheria 1
IS - Islanda 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LK - Sri Lanka 1
MN - Mongolia 1
NG - Nigeria 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
Totale 62.574
Città #
Southend 17.405
Dublin 7.813
Warsaw 2.178
Jacksonville 1.748
Chandler 1.121
Ann Arbor 722
Ashburn 676
Princeton 668
Nanjing 634
Wilmington 550
Mountain View 544
Montréal 510
Dearborn 505
Woodbridge 484
Munich 469
Dalmine 438
Dong Ket 434
Boardman 407
Toronto 403
Singapore 385
Mcallen 362
Beijing 360
Fairfield 357
Bergamo 280
Houston 270
Milan 261
Shanghai 260
Nanchang 255
Sunnyvale 235
Atlanta 232
The Dalles 231
Altamura 230
Washington 222
Vienna 221
Andover 218
San Mateo 215
Rancio Valcuvia 182
Seattle 167
Moscow 139
Zhengzhou 137
Cambridge 133
Redwood City 120
Kunming 111
London 105
Ogden 96
New York 93
Tianjin 84
Kiez 83
Shenyang 81
Hebei 79
Pavia 76
Guangzhou 67
Fremont 66
Hangzhou 61
Nürnberg 60
Berlin 57
Jiaxing 57
Brussels 56
Hong Kong 56
Needham Heights 54
Amsterdam 52
Los Angeles 52
Helsinki 47
Jakarta 47
Kocaeli 43
Norwalk 43
Changsha 41
Saint Petersburg 39
Brno 38
Nuremberg 37
Santa Clara 36
Changchun 35
Jinan 35
Lanzhou 33
Verdellino 33
Frankfurt am Main 32
Rome 30
Sakarya 30
Chicago 28
Segrate 25
Falkenstein 24
San Diego 24
Hamburg 23
Pisa 23
Hefei 22
Hounslow 22
Seoul 22
Spirano 22
Westminster 22
Vilnius 21
Kilburn 20
Ningbo 20
Madrid 19
Verona 19
Acton 18
Kuala Lumpur 18
Istanbul 17
Serra 17
Auburn Hills 16
Lappeenranta 16
Totale 45.684
Nome #
PixFEL: Enabling technologies, building blocks and architectures for advanced X-ray pixel cameras at the next generation FELs 2.032
0.13μm CMOS technologies for analog front-end circuits in LHC detector upgrades 881
A 3D Vertically Integrated Deep N-Well CMOS MAPS for the SuperB Layer0 774
130 nm and 90 nm CMOS Technologies for Detector Front-end Applications 733
Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC 641
65 nm Technology for HEP: Status and Perspective 623
P-Type Silicon Strip Sensors for the new CMS Tracker at HL-LHC 521
The SuperB Silicon Vertex Tracker 510
A 65 nm CMOS Front-End Chip for High Density Readout of Pixel Sensors 497
A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs 491
3D DNW MAPS for High Resolution, Highly Efficient, Sparse Readout CMOS Detectors 448
2D and 3D CMOS MAPS with high performance pixel-level signal processing 434
Alignment of the CMS tracker with LHC and cosmic ray data 434
Precision measurement of the structure of the CMS inner tracking system using nuclear interactions 431
A 3D deep n-well CMOS MAPS for the ILC vertex detector 429
Perspectives of 65nm CMOS technologies for high performance front-end electronics 427
Test beam demonstration of silicon microstrip modules with transverse momentum discrimination for the future CMS tracking detector 420
Characterization of SLVS Driver and Receiver in a 65 nm CMOS Technology for High Energy Physics Applications 420
Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade 409
Monolithic pixel detectors in a 0.13 µm CMOS technology with sensor level continuous time charge amplification and shaping 403
Vertical integration approach to the readout of pixel detectors for vertexing applications 391
Beam test results for the SuperB-SVT thin striplet detector 389
A 65-nm CMOS Prototype Chip With Monolithic Pixel Sensors and Fast Front-End Electronics 382
Description and performance of track and primary-vertex reconstruction with the CMS tracker 382
Development of the DEPFET Sensor With Signal Compression: A Large Format X-Ray Imager With Mega-Frame Readout Capability for the European XFEL 381
The front-end chip of the SuperB SVT detector 376
Vertically integrated deep N-well CMOS MAPS with sparsification and time stamping capabilities for thin charged particle trackers 368
Noise performance of 0.13 µm CMOS technologies for detector front-end applications 367
Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker 367
Performance of a high accuracy injection circuit for in-pixel calibration of a large sensor matrix 366
Impact of lateral isolation oxides on radiation-induced noise degradation in CMOS technologies in the 100-nm regime 365
The SuperB silicon vertex tracker 362
The DSSC Pixel Readout ASIC with Amplitude Digitization and Local Storage for DEPFET Sensor Matrices at the European XFEL 358
2D and 3D thin pixel technologies for the Layer0 of the SuperB Silicon Vertex Tracker 355
Design of bandgap reference circuits in a 65 nm CMOS technology for HL-LHC applications 351
A new approach to the design of monolithic active pixel detectors in 0.13 µm triple well CMOS technology 351
Mechanisms of Noise Degradation in Low Power 65 nm CMOS Transistors Exposed to Ionizing Radiation 348
Thin pixel development for the superB silicon vertex tracker 347
Forecasting noise and radiation hardness of CMOS front-end electronics beyond the 100 nm frontier 340
Comprehensive study of total ionizing dose damage mechanisms and their effects on noise sources in a 90 nm CMOS technology 339
The PixFEL project: development of advanced X-ray pixel detectors for application at future FEL facilities 337
Radiation tolerance of devices and circuits in a 3D technology based on the vertical integration of two 130-nm CMOS layers 337
FSSR2, a self-triggered low noise readout chip for silicon strip detectors 332
Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology 332
Assessment of a low-power 65 nm CMOS technology for analog front-end design 328
Fast Analog Front-end for the Readout of the SuperB SVT Inner Layers 328
The Apsel65 front-end chip for the readout of pixel sensors in the 65 nm CMOS node 327
Monolithic Active Pixel Sensors for the vertex detector at the International Linear Collider 327
Survey of noise performances and scaling effects in deep submicrometer CMOS devices from different foundries 324
Vertically integrated monolithic pixel sensors for charged particle tracking and biomedical imaging 323
First results from the characterization of a three-dimensional deep N-well MAPS prototype for vertexing applications 316
CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments 315
High accuracy injection circuit for the calibration of a large pixel sensor matrix 314
Front-end performance and charge collection properties of heavily irradiated DNW MAPS 314
Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics 313
Noise behavior of a 180 nm CMOS SOI technology for detector front-end electronics 312
Response of SOI bipolar transistors exposed to gamma-rays under different dose rate and bias conditions 312
Investigating degradation mechanisms in 130nm and 90nm commercial CMOS technologies exposed to up to 100 Mrad ionizing radiation dose 312
A novel monolithic active pixel detector in a 0.13 µm triple well CMOS technology with pixel level analog processing 311
Pixel-Level charge and current injection circuit for high accuracy calibration of the DSSC Chip at the European XFEL 311
High precision injection circuit for in-pixel calibration of a large sensor matrix 308
Recent results from the development of silicon detectors with integrated electronics 308
A 2D imager for X-ray FELs with a 65 nm CMOS readout based on per-pixel signal compression and 10 bit A/D conversion 308
Review of radiation effects leading to noise performance degradation in 100-nm scale microelectronic technologies 307
Introducing 65 nm CMOS technology in low-noise read-out of semiconductor detectors 307
Gate Current Noise in Ultrathin Oxide MOSFETs and Its Impact on the Performance of Analog Front-End Circuits 302
Fermilab silicon strip readout chip for BTeV 299
MAPS with pixel level sparsified readout: from standard CMOS to vertical integration 299
Active pixel sensors with enhanced pixel-level analog and digital functionalities in a 2-tier 3D CMOS technology 298
The readout of the LHC beam luminosity monitor: accurate shower energy measurements at a 40 MHz repetition rate 296
TID-Induced Degradation in Static and Noise Behavior of Sub-100 nm Multifinger Bulk NMOSFETs 296
Design criteria for low noise front-end electronics in the 0.13 µm CMOS generation 295
First prototype of a silicon microstrip detector with the data-driven readout chip FSSR2 for a tracking-based trigger system 295
R&D Progress on The SuperB Silicon Vertex Tracker 295
Performance of a DNW CMOS active pixel sensor designed for the ILC Vertex Detector 293
A pixelated x-ray detector for diffraction imaging at next-generation high-rate FEL sources 293
Recent progress in the development of 3D deep n-well CMOS MAPS 292
CMOS MAPS with fully integrated, hybrid-pixel-like analog front-end electronics 292
The design of fast analog channels for the readout of strip detectors in the inner layers of the SuperB SVT 291
A 4096-pixel MAPS device with on-chip data sparsification 291
Perspectives for low noise detector readout in a sub-quarter-micron CMOS SOI technology 289
Latest results of the R&D on CMOS MAPS for the Layer0 of the SuperB SVT 288
Beam test results of different configurations of deep N-well MAPS matrices featuring in pixel full signal processing 287
Pixel-Level Continuous-Time Analog Signal Processing for 130 nm CMOS MAPS 285
Deep N-well CMOS MAPS with in-pixel signal processing and sparsification for the ILC vertex detector 284
CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking 284
Design and Performance of Analog Circuits for DNW-MAPS in 100-nm-scale CMOS Technology 284
Charge Signal Processors in Sparse Readout CMOS MAPS and Hybrid Pixel Sensors for the SuperB Layer0 283
Low-power clock distribution circuits for the Macro Pixel ASIC 283
Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems 283
FSSR2, a self-triggered low noise readout chip for silicon strip detectors 283
Recent developments on CMOS MAPS for the SuperB Silicon Vertex Tracker 282
Front-end electronics in a 65 nm CMOS process for high density readout of pixel sensors 281
Proton-induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 280
Resolution limits in 130 nm and 90 nm CMOS technologies for analog front-end applications 280
Low noise design issues for analog front-end electronics in 130 nm and 90 nm CMOS technologies 280
Beam test performance of prototype silicon detectors for the Outer Tracker for the Phase-2 Upgrade of CMS 278
Investigating Degradation Mechanisms in 130 nm and 90 nm Commercial CMOS Technologies Under Extreme Radiation Conditions 275
Characterization of a large scale DNW MAPS fabricated in a 3D integration process 273
TID effects in deep N-well CMOS monolithic active pixel sensors 272
Totale 37.267
Categoria #
all - tutte 179.789
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 179.789


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020613 0 0 0 0 0 0 0 0 0 0 267 346
2020/20219.465 905 558 485 563 613 840 1.053 307 1.008 1.027 1.321 785
2021/20226.425 545 794 357 428 621 946 290 309 385 710 665 375
2022/20235.169 811 595 784 758 442 653 67 213 367 99 228 152
2023/202410.100 133 242 287 204 330 2.118 5.892 345 189 46 59 255
2024/20255.332 367 584 374 1.102 178 147 104 386 614 1.475 1 0
Totale 64.062