MANGHISONI, Massimo
 Distribuzione geografica
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Continente #
EU - Europa 45.601
NA - Nord America 26.037
AS - Asia 10.894
Continente sconosciuto - Info sul continente non disponibili 1.727
SA - Sud America 853
AF - Africa 420
OC - Oceania 17
Totale 85.549
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Nazione #
US - Stati Uniti d'America 24.350
GB - Regno Unito 18.662
IE - Irlanda 7.865
RU - Federazione Russa 4.835
CN - Cina 4.617
IT - Italia 3.700
SG - Singapore 3.515
PL - Polonia 2.296
DE - Germania 2.256
FR - Francia 1.746
SE - Svezia 1.415
NL - Olanda 1.234
CA - Canada 1.211
VN - Vietnam 1.069
UA - Ucraina 594
BR - Brasile 582
IN - India 307
ZA - Sudafrica 294
HK - Hong Kong 288
AT - Austria 273
FI - Finlandia 268
KR - Corea 174
EU - Europa 161
TR - Turchia 152
BD - Bangladesh 137
JP - Giappone 109
ES - Italia 81
IQ - Iraq 78
AR - Argentina 75
ID - Indonesia 75
LT - Lituania 72
CR - Costa Rica 66
MX - Messico 64
CH - Svizzera 61
BE - Belgio 59
CZ - Repubblica Ceca 58
CO - Colombia 56
HN - Honduras 53
MY - Malesia 53
EC - Ecuador 47
TT - Trinidad e Tobago 45
GT - Guatemala 43
PK - Pakistan 42
SV - El Salvador 42
PH - Filippine 40
GP - Guadalupe 38
NI - Nicaragua 37
PR - Porto Rico 36
CW - ???statistics.table.value.countryCode.CW??? 35
VE - Venezuela 31
RO - Romania 29
SA - Arabia Saudita 27
CL - Cile 24
JM - Giamaica 24
UZ - Uzbekistan 22
KE - Kenya 21
TW - Taiwan 21
BG - Bulgaria 20
AE - Emirati Arabi Uniti 16
IR - Iran 16
JO - Giordania 16
MA - Marocco 15
NP - Nepal 15
TN - Tunisia 15
IL - Israele 14
PE - Perù 14
EG - Egitto 13
LB - Libano 13
PY - Paraguay 13
AU - Australia 12
KZ - Kazakistan 12
DZ - Algeria 11
AZ - Azerbaigian 10
LV - Lettonia 10
PT - Portogallo 10
BH - Bahrain 9
ET - Etiopia 9
BB - Barbados 8
GR - Grecia 8
TH - Thailandia 8
BY - Bielorussia 7
DK - Danimarca 7
OM - Oman 7
SC - Seychelles 7
EE - Estonia 6
PS - Palestinian Territory 6
BA - Bosnia-Erzegovina 5
BO - Bolivia 5
CI - Costa d'Avorio 5
DO - Repubblica Dominicana 5
MU - Mauritius 5
SN - Senegal 5
UY - Uruguay 5
AL - Albania 4
BJ - Benin 4
MD - Moldavia 4
MN - Mongolia 4
NO - Norvegia 4
AM - Armenia 3
BS - Bahamas 3
Totale 83.953
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Città #
Southend 17.405
Dublin 7.818
Ashburn 2.632
Warsaw 2.224
San Jose 1.990
Jacksonville 1.763
Council Bluffs 1.744
Singapore 1.491
Moscow 1.471
Chandler 1.121
Ann Arbor 722
Princeton 674
Hefei 653
Nanjing 636
Beijing 628
Wilmington 553
Mountain View 544
Montréal 510
Munich 509
Dearborn 507
Woodbridge 485
Dalmine 475
Toronto 441
Dong Ket 434
Boardman 415
Milan 381
Mcallen 362
Fairfield 358
Los Angeles 330
Santa Clara 322
Bergamo 315
Houston 299
Atlanta 288
Shanghai 281
The Dalles 280
Johannesburg 268
Nanchang 256
Hong Kong 252
Sunnyvale 235
Vienna 233
Altamura 230
Washington 227
New York 225
Lauterbourg 219
Andover 218
San Mateo 218
Ho Chi Minh City 213
Columbus 207
Seattle 184
Rancio Valcuvia 182
Hanoi 159
Dallas 152
Buffalo 149
Zhengzhou 142
Cambridge 136
London 134
Redwood City 120
Kunming 113
Tianjin 106
Guangzhou 103
Frankfurt am Main 101
Chicago 96
Ogden 96
Rome 92
Kiez 83
Shenyang 82
Helsinki 81
Orem 81
Hebei 79
Pavia 76
São Paulo 72
Amsterdam 70
Tokyo 70
Montreal 68
Fremont 66
Hangzhou 65
Berlin 61
Nürnberg 60
Jiaxing 58
Brooklyn 57
Brussels 57
Redondo Beach 57
Jakarta 54
Needham Heights 54
Nuremberg 54
Changsha 53
Phoenix 53
Norwalk 50
San José 47
Vilnius 45
Kocaeli 43
Denver 42
Seoul 42
Chennai 40
Boston 39
Saint Petersburg 39
Brno 38
Naples 38
Philadelphia 38
Jinan 36
Totale 58.175
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Nome #
PixFEL: Enabling technologies, building blocks and architectures for advanced X-ray pixel cameras at the next generation FELs 2.123
0.13μm CMOS technologies for analog front-end circuits in LHC detector upgrades 1.067
A 3D Vertically Integrated Deep N-Well CMOS MAPS for the SuperB Layer0 867
130 nm and 90 nm CMOS Technologies for Detector Front-end Applications 841
Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC 720
65 nm Technology for HEP: Status and Perspective 695
P-Type Silicon Strip Sensors for the new CMS Tracker at HL-LHC 636
The SuperB Silicon Vertex Tracker 610
A 65 nm CMOS Front-End Chip for High Density Readout of Pixel Sensors 607
A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs 607
3D DNW MAPS for High Resolution, Highly Efficient, Sparse Readout CMOS Detectors 565
A 3D deep n-well CMOS MAPS for the ILC vertex detector 540
Monolithic pixel detectors in a 0.13 µm CMOS technology with sensor level continuous time charge amplification and shaping 518
Test beam demonstration of silicon microstrip modules with transverse momentum discrimination for the future CMS tracking detector 514
2D and 3D CMOS MAPS with high performance pixel-level signal processing 512
Noise performance of 0.13 µm CMOS technologies for detector front-end applications 510
Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade 509
Perspectives of 65nm CMOS technologies for high performance front-end electronics 506
Precision measurement of the structure of the CMS inner tracking system using nuclear interactions 498
Alignment of the CMS tracker with LHC and cosmic ray data 497
Characterization of SLVS Driver and Receiver in a 65 nm CMOS Technology for High Energy Physics Applications 497
A 65-nm CMOS Prototype Chip With Monolithic Pixel Sensors and Fast Front-End Electronics 483
Assessment of a low-power 65 nm CMOS technology for analog front-end design 481
Beam test results for the SuperB-SVT thin striplet detector 476
Development of the DEPFET Sensor With Signal Compression: A Large Format X-Ray Imager With Mega-Frame Readout Capability for the European XFEL 473
The DSSC Pixel Readout ASIC with Amplitude Digitization and Local Storage for DEPFET Sensor Matrices at the European XFEL 463
Impact of lateral isolation oxides on radiation-induced noise degradation in CMOS technologies in the 100-nm regime 462
Radiation tolerance of devices and circuits in a 3D technology based on the vertical integration of two 130-nm CMOS layers 461
Vertically integrated deep N-well CMOS MAPS with sparsification and time stamping capabilities for thin charged particle trackers 461
Description and performance of track and primary-vertex reconstruction with the CMS tracker 461
The SuperB silicon vertex tracker 459
Design of bandgap reference circuits in a 65 nm CMOS technology for HL-LHC applications 455
Vertical integration approach to the readout of pixel detectors for vertexing applications 453
Comprehensive study of total ionizing dose damage mechanisms and their effects on noise sources in a 90 nm CMOS technology 451
Forecasting noise and radiation hardness of CMOS front-end electronics beyond the 100 nm frontier 450
Survey of noise performances and scaling effects in deep submicrometer CMOS devices from different foundries 448
The front-end chip of the SuperB SVT detector 447
Performance of a high accuracy injection circuit for in-pixel calibration of a large sensor matrix 445
Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker 442
Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology 440
FSSR2, a self-triggered low noise readout chip for silicon strip detectors 438
The PixFEL project: development of advanced X-ray pixel detectors for application at future FEL facilities 436
Mechanisms of Noise Degradation in Low Power 65 nm CMOS Transistors Exposed to Ionizing Radiation 431
Vertically integrated monolithic pixel sensors for charged particle tracking and biomedical imaging 430
2D and 3D thin pixel technologies for the Layer0 of the SuperB Silicon Vertex Tracker 421
Fast Analog Front-end for the Readout of the SuperB SVT Inner Layers 420
A 2D imager for X-ray FELs with a 65 nm CMOS readout based on per-pixel signal compression and 10 bit A/D conversion 419
A new approach to the design of monolithic active pixel detectors in 0.13 µm triple well CMOS technology 408
Front-end performance and charge collection properties of heavily irradiated DNW MAPS 406
High precision injection circuit for in-pixel calibration of a large sensor matrix 402
A novel monolithic active pixel detector in a 0.13 µm triple well CMOS technology with pixel level analog processing 402
Thin pixel development for the superB silicon vertex tracker 401
Response of SOI bipolar transistors exposed to gamma-rays under different dose rate and bias conditions 400
A pixelated x-ray detector for diffraction imaging at next-generation high-rate FEL sources 400
Monolithic Active Pixel Sensors for the vertex detector at the International Linear Collider 399
Investigating degradation mechanisms in 130nm and 90nm commercial CMOS technologies exposed to up to 100 Mrad ionizing radiation dose 399
CMOS MAPS with fully integrated, hybrid-pixel-like analog front-end electronics 398
Fermilab silicon strip readout chip for BTeV 393
Noise behavior of a 180 nm CMOS SOI technology for detector front-end electronics 390
Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics 389
High accuracy injection circuit for the calibration of a large pixel sensor matrix 389
Pixel-Level charge and current injection circuit for high accuracy calibration of the DSSC Chip at the European XFEL 389
The Apsel65 front-end chip for the readout of pixel sensors in the 65 nm CMOS node 388
First results from the characterization of a three-dimensional deep N-well MAPS prototype for vertexing applications 386
TID-Induced Degradation in Static and Noise Behavior of Sub-100 nm Multifinger Bulk NMOSFETs 383
CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments 379
Review of radiation effects leading to noise performance degradation in 100-nm scale microelectronic technologies 379
Front-end electronics in a 65 nm CMOS process for high density readout of pixel sensors 378
Recent developments on CMOS MAPS for the SuperB Silicon Vertex Tracker 378
Investigating Degradation Mechanisms in 130 nm and 90 nm Commercial CMOS Technologies Under Extreme Radiation Conditions 378
Gate Current Noise in Ultrathin Oxide MOSFETs and Its Impact on the Performance of Analog Front-End Circuits 376
Design criteria for low noise front-end electronics in the 0.13 µm CMOS generation 375
First prototype of a silicon microstrip detector with the data-driven readout chip FSSR2 for a tracking-based trigger system 375
The readout of the LHC beam luminosity monitor: accurate shower energy measurements at a 40 MHz repetition rate 374
Introducing 65 nm CMOS technology in low-noise read-out of semiconductor detectors 373
The design of fast analog channels for the readout of strip detectors in the inner layers of the SuperB SVT 369
Proton-induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 366
A Front-End Channel in 65 nm CMOS for Pixel Detectors at the HL-LHC Experiment Upgrades 366
Recent results from the development of silicon detectors with integrated electronics 365
R&D Progress on The SuperB Silicon Vertex Tracker 364
Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems 362
MAPS with pixel level sparsified readout: from standard CMOS to vertical integration 362
65-nm CMOS Front-End Channel for Pixel Readout in the HL-LHC Radiation Environment 362
A 4096-pixel MAPS device with on-chip data sparsification 361
Charge Signal Processors in Sparse Readout CMOS MAPS and Hybrid Pixel Sensors for the SuperB Layer0 360
Performance of a DNW CMOS active pixel sensor designed for the ILC Vertex Detector 359
Pixel-Level Continuous-Time Analog Signal Processing for 130 nm CMOS MAPS 359
Minimum noise design of charge amplifiers with CMOS processes in the 100 nm feature size range 359
CMOS MAPS in a homogeneous 3D process for charged particle tracking 358
Instrumentation for gate current noise measurements on sub-100 nm MOS transistors 358
Active pixel sensors with enhanced pixel-level analog and digital functionalities in a 2-tier 3D CMOS technology 358
Review of radiation damage studies on DNW CMOS MAPS 357
TID effects in deep N-well CMOS monolithic active pixel sensors 357
Deep N-well CMOS MAPS with in-pixel signal processing and sparsification for the ILC vertex detector 357
Low noise design issues for analog front-end electronics in 130 nm and 90 nm CMOS technologies 357
Latest results of the R&D on CMOS MAPS for the Layer0 of the SuperB SVT 356
Design and Performance of Analog Circuits for DNW-MAPS in 100-nm-scale CMOS Technology 355
65 nm CMOS analog front-end for pixel detectors at the HL-LHC 355
Dynamic compression of the signal in a charge sensitive amplifier: from concept to design 355
Beam test results of different configurations of deep N-well MAPS matrices featuring in pixel full signal processing 354
Totale 46.023
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Categoria #
all - tutte 259.837
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 259.837
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20224.729 0 0 0 428 621 946 290 309 385 710 665 375
2022/20235.169 811 595 784 758 442 653 67 213 367 99 228 152
2023/202410.100 133 242 287 204 330 2.118 5.892 345 189 46 59 255
2024/20257.501 367 584 374 1.102 178 147 104 386 614 1.475 1.253 917
2025/202614.563 650 761 1.029 1.315 2.427 1.058 2.440 829 1.246 1.083 770 955
2026/20274.755 434 667 1.349 2.305 0 0 0 0 0 0 0 0
Totale 85.549