MANGHISONI, Massimo
 Distribuzione geografica
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Continente #
EU - Europa 44.833
NA - Nord America 20.581
AS - Asia 10.532
SA - Sud America 750
AF - Africa 411
Continente sconosciuto - Info sul continente non disponibili 25
OC - Oceania 16
Totale 77.148
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Nazione #
US - Stati Uniti d'America 19.468
GB - Regno Unito 18.619
IE - Irlanda 7.865
RU - Federazione Russa 4.834
CN - Cina 4.527
SG - Singapore 3.376
IT - Italia 3.195
PL - Polonia 2.294
DE - Germania 2.241
FR - Francia 1.722
SE - Svezia 1.295
NL - Olanda 1.223
VN - Vietnam 1.058
CA - Canada 1.018
UA - Ucraina 591
BR - Brasile 548
IN - India 302
ZA - Sudafrica 294
AT - Austria 273
FI - Finlandia 267
HK - Hong Kong 260
KR - Corea 174
EU - Europa 161
TR - Turchia 150
JP - Giappone 105
BD - Bangladesh 101
IQ - Iraq 78
ES - Italia 72
AR - Argentina 69
ID - Indonesia 65
CH - Svizzera 60
BE - Belgio 58
CZ - Repubblica Ceca 57
MX - Messico 55
LT - Lituania 53
MY - Malesia 43
PK - Pakistan 39
CO - Colombia 31
PH - Filippine 31
RO - Romania 29
SA - Arabia Saudita 26
VE - Venezuela 24
CL - Cile 22
EC - Ecuador 22
UZ - Uzbekistan 22
BG - Bulgaria 19
TW - Taiwan 19
KE - Kenya 18
AE - Emirati Arabi Uniti 16
IR - Iran 16
JO - Giordania 16
MA - Marocco 15
TN - Tunisia 15
NP - Nepal 14
EG - Egitto 13
PY - Paraguay 13
LB - Libano 12
PE - Perù 12
AU - Australia 11
DZ - Algeria 11
AZ - Azerbaigian 10
KZ - Kazakistan 10
PT - Portogallo 10
BH - Bahrain 9
ET - Etiopia 9
GR - Grecia 8
IL - Israele 8
LV - Lettonia 8
TH - Thailandia 8
BY - Bielorussia 6
CR - Costa Rica 6
DK - Danimarca 6
OM - Oman 6
PS - Palestinian Territory 6
BA - Bosnia-Erzegovina 5
BO - Bolivia 5
DO - Repubblica Dominicana 5
HN - Honduras 5
JM - Giamaica 5
MU - Mauritius 5
SN - Senegal 5
AL - Albania 4
BJ - Benin 4
MD - Moldavia 4
MN - Mongolia 4
SC - Seychelles 4
AM - Armenia 3
CI - Costa d'Avorio 3
HU - Ungheria 3
NI - Nicaragua 3
NO - Norvegia 3
NZ - Nuova Zelanda 3
SY - Repubblica araba siriana 3
UY - Uruguay 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AO - Angola 2
CY - Cipro 2
GE - Georgia 2
GT - Guatemala 2
HR - Croazia 2
Totale 77.238
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Città #
Southend 17.405
Dublin 7.818
Warsaw 2.224
Ashburn 2.140
Jacksonville 1.754
Moscow 1.471
Singapore 1.453
San Jose 1.413
Chandler 1.121
Ann Arbor 722
Princeton 668
Hefei 652
Nanjing 636
Beijing 606
Wilmington 552
Mountain View 544
Montréal 510
Munich 509
Dearborn 505
Woodbridge 484
Dalmine 444
Dong Ket 434
Toronto 420
Boardman 407
Mcallen 362
Fairfield 357
Milan 320
Bergamo 292
Houston 282
The Dalles 278
Los Angeles 276
Shanghai 274
Johannesburg 268
Atlanta 264
Nanchang 256
Sunnyvale 235
Vienna 233
Altamura 230
Hong Kong 230
Washington 222
Lauterbourg 219
Andover 218
San Mateo 216
Ho Chi Minh City 205
New York 190
Rancio Valcuvia 182
Seattle 177
Hanoi 158
Zhengzhou 142
Buffalo 139
Cambridge 133
London 131
Santa Clara 131
Redwood City 120
Dallas 116
Kunming 113
Tianjin 104
Guangzhou 103
Frankfurt am Main 98
Ogden 96
Kiez 83
Shenyang 82
Helsinki 80
Orem 80
Hebei 79
Chicago 77
Pavia 76
Amsterdam 69
Tokyo 68
Fremont 66
São Paulo 65
Council Bluffs 62
Hangzhou 62
Berlin 61
Nürnberg 60
Jiaxing 58
Redondo Beach 57
Brussels 56
Jakarta 54
Needham Heights 54
Changsha 53
Nuremberg 52
Norwalk 44
Kocaeli 43
Seoul 42
Chennai 39
Montreal 39
Saint Petersburg 39
Brno 38
Jinan 36
Rome 36
Brooklyn 35
Changchun 35
Denver 34
Boston 33
Lanzhou 33
Verdellino 33
Stockholm 31
Sakarya 30
Da Nang 29
Totale 54.365
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Nome #
PixFEL: Enabling technologies, building blocks and architectures for advanced X-ray pixel cameras at the next generation FELs 2.095
0.13μm CMOS technologies for analog front-end circuits in LHC detector upgrades 1.021
A 3D Vertically Integrated Deep N-Well CMOS MAPS for the SuperB Layer0 829
130 nm and 90 nm CMOS Technologies for Detector Front-end Applications 817
Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC 701
65 nm Technology for HEP: Status and Perspective 673
P-Type Silicon Strip Sensors for the new CMS Tracker at HL-LHC 602
The SuperB Silicon Vertex Tracker 576
A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs 576
A 65 nm CMOS Front-End Chip for High Density Readout of Pixel Sensors 549
3D DNW MAPS for High Resolution, Highly Efficient, Sparse Readout CMOS Detectors 520
A 3D deep n-well CMOS MAPS for the ILC vertex detector 502
Monolithic pixel detectors in a 0.13 µm CMOS technology with sensor level continuous time charge amplification and shaping 488
Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade 487
Test beam demonstration of silicon microstrip modules with transverse momentum discrimination for the future CMS tracking detector 487
2D and 3D CMOS MAPS with high performance pixel-level signal processing 483
Precision measurement of the structure of the CMS inner tracking system using nuclear interactions 481
Noise performance of 0.13 µm CMOS technologies for detector front-end applications 476
Characterization of SLVS Driver and Receiver in a 65 nm CMOS Technology for High Energy Physics Applications 475
Alignment of the CMS tracker with LHC and cosmic ray data 473
Perspectives of 65nm CMOS technologies for high performance front-end electronics 472
A 65-nm CMOS Prototype Chip With Monolithic Pixel Sensors and Fast Front-End Electronics 446
Assessment of a low-power 65 nm CMOS technology for analog front-end design 445
Beam test results for the SuperB-SVT thin striplet detector 444
Development of the DEPFET Sensor With Signal Compression: A Large Format X-Ray Imager With Mega-Frame Readout Capability for the European XFEL 440
Impact of lateral isolation oxides on radiation-induced noise degradation in CMOS technologies in the 100-nm regime 440
The DSSC Pixel Readout ASIC with Amplitude Digitization and Local Storage for DEPFET Sensor Matrices at the European XFEL 439
Vertically integrated deep N-well CMOS MAPS with sparsification and time stamping capabilities for thin charged particle trackers 437
Description and performance of track and primary-vertex reconstruction with the CMS tracker 434
The front-end chip of the SuperB SVT detector 433
The SuperB silicon vertex tracker 431
Vertical integration approach to the readout of pixel detectors for vertexing applications 427
Design of bandgap reference circuits in a 65 nm CMOS technology for HL-LHC applications 425
Radiation tolerance of devices and circuits in a 3D technology based on the vertical integration of two 130-nm CMOS layers 425
Forecasting noise and radiation hardness of CMOS front-end electronics beyond the 100 nm frontier 425
Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker 422
Performance of a high accuracy injection circuit for in-pixel calibration of a large sensor matrix 420
Survey of noise performances and scaling effects in deep submicrometer CMOS devices from different foundries 416
The PixFEL project: development of advanced X-ray pixel detectors for application at future FEL facilities 413
Comprehensive study of total ionizing dose damage mechanisms and their effects on noise sources in a 90 nm CMOS technology 413
Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology 412
FSSR2, a self-triggered low noise readout chip for silicon strip detectors 410
Mechanisms of Noise Degradation in Low Power 65 nm CMOS Transistors Exposed to Ionizing Radiation 406
Vertically integrated monolithic pixel sensors for charged particle tracking and biomedical imaging 400
Fast Analog Front-end for the Readout of the SuperB SVT Inner Layers 400
2D and 3D thin pixel technologies for the Layer0 of the SuperB Silicon Vertex Tracker 399
A new approach to the design of monolithic active pixel detectors in 0.13 µm triple well CMOS technology 396
Front-end performance and charge collection properties of heavily irradiated DNW MAPS 391
Thin pixel development for the superB silicon vertex tracker 384
A novel monolithic active pixel detector in a 0.13 µm triple well CMOS technology with pixel level analog processing 380
High precision injection circuit for in-pixel calibration of a large sensor matrix 378
A 2D imager for X-ray FELs with a 65 nm CMOS readout based on per-pixel signal compression and 10 bit A/D conversion 377
Response of SOI bipolar transistors exposed to gamma-rays under different dose rate and bias conditions 376
Investigating degradation mechanisms in 130nm and 90nm commercial CMOS technologies exposed to up to 100 Mrad ionizing radiation dose 376
Noise behavior of a 180 nm CMOS SOI technology for detector front-end electronics 372
High accuracy injection circuit for the calibration of a large pixel sensor matrix 371
Pixel-Level charge and current injection circuit for high accuracy calibration of the DSSC Chip at the European XFEL 366
A pixelated x-ray detector for diffraction imaging at next-generation high-rate FEL sources 366
The Apsel65 front-end chip for the readout of pixel sensors in the 65 nm CMOS node 364
Fermilab silicon strip readout chip for BTeV 364
Monolithic Active Pixel Sensors for the vertex detector at the International Linear Collider 364
TID-Induced Degradation in Static and Noise Behavior of Sub-100 nm Multifinger Bulk NMOSFETs 362
Gate Current Noise in Ultrathin Oxide MOSFETs and Its Impact on the Performance of Analog Front-End Circuits 361
First results from the characterization of a three-dimensional deep N-well MAPS prototype for vertexing applications 360
CMOS MAPS with fully integrated, hybrid-pixel-like analog front-end electronics 359
Design criteria for low noise front-end electronics in the 0.13 µm CMOS generation 358
Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics 357
Review of radiation effects leading to noise performance degradation in 100-nm scale microelectronic technologies 356
Front-end electronics in a 65 nm CMOS process for high density readout of pixel sensors 353
CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments 353
The design of fast analog channels for the readout of strip detectors in the inner layers of the SuperB SVT 353
The readout of the LHC beam luminosity monitor: accurate shower energy measurements at a 40 MHz repetition rate 351
First prototype of a silicon microstrip detector with the data-driven readout chip FSSR2 for a tracking-based trigger system 351
MAPS with pixel level sparsified readout: from standard CMOS to vertical integration 351
Recent results from the development of silicon detectors with integrated electronics 350
Investigating Degradation Mechanisms in 130 nm and 90 nm Commercial CMOS Technologies Under Extreme Radiation Conditions 346
R&D Progress on The SuperB Silicon Vertex Tracker 346
Pixel-Level Continuous-Time Analog Signal Processing for 130 nm CMOS MAPS 345
Charge Signal Processors in Sparse Readout CMOS MAPS and Hybrid Pixel Sensors for the SuperB Layer0 344
Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems 343
Introducing 65 nm CMOS technology in low-noise read-out of semiconductor detectors 342
Design and Performance of Analog Circuits for DNW-MAPS in 100-nm-scale CMOS Technology 342
Recent developments on CMOS MAPS for the SuperB Silicon Vertex Tracker 341
Proton-induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 339
Minimum noise design of charge amplifiers with CMOS processes in the 100 nm feature size range 339
A 4096-pixel MAPS device with on-chip data sparsification 339
Low noise design issues for analog front-end electronics in 130 nm and 90 nm CMOS technologies 338
Latest results of the R&D on CMOS MAPS for the Layer0 of the SuperB SVT 338
Performance of a DNW CMOS active pixel sensor designed for the ILC Vertex Detector 336
Beam test results of different configurations of deep N-well MAPS matrices featuring in pixel full signal processing 335
Active pixel sensors with enhanced pixel-level analog and digital functionalities in a 2-tier 3D CMOS technology 335
Beam test performance of prototype silicon detectors for the Outer Tracker for the Phase-2 Upgrade of CMS 335
Instrumentation for gate current noise measurements on sub-100 nm MOS transistors 334
Perspectives for low noise detector readout in a sub-quarter-micron CMOS SOI technology 333
Review of radiation damage studies on DNW CMOS MAPS 331
TID effects in deep N-well CMOS monolithic active pixel sensors 329
CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking 328
CMOS MAPS in a homogeneous 3D process for charged particle tracking 327
65-nm CMOS Front-End Channel for Pixel Readout in the HL-LHC Radiation Environment 327
Dynamic compression of the signal in a charge sensitive amplifier: from concept to design 327
Totale 43.404
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Categoria #
all - tutte 225.592
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 225.592
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20213.133 0 0 0 0 0 0 0 0 0 1.027 1.321 785
2021/20226.425 545 794 357 428 621 946 290 309 385 710 665 375
2022/20235.169 811 595 784 758 442 653 67 213 367 99 228 152
2023/202410.100 133 242 287 204 330 2.118 5.892 345 189 46 59 255
2024/20257.501 367 584 374 1.102 178 147 104 386 614 1.475 1.253 917
2025/202612.579 650 761 1.029 1.315 2.427 1.058 2.440 829 1.246 824 0 0
Totale 78.810