MANGHISONI, Massimo
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
EU - Europa 38.911
NA - Nord America 15.174
AS - Asia 4.115
Continente sconosciuto - Info sul continente non disponibili 23
AF - Africa 17
SA - Sud America 12
OC - Oceania 7
Totale 58.259
Salva come PNG Salva come JPEG
Nazione #
GB - Regno Unito 18.453
US - Stati Uniti d'America 14.247
IE - Irlanda 7.856
CN - Cina 2.913
IT - Italia 2.834
PL - Polonia 2.180
DE - Germania 1.966
RU - Federazione Russa 1.583
FR - Francia 1.402
SE - Svezia 1.262
CA - Canada 925
UA - Ucraina 572
VN - Vietnam 440
SG - Singapore 271
AT - Austria 217
FI - Finlandia 169
EU - Europa 161
KR - Corea 150
NL - Olanda 132
IN - India 128
TR - Turchia 78
CH - Svizzera 57
CZ - Repubblica Ceca 56
BE - Belgio 51
ID - Indonesia 47
ES - Italia 33
LT - Lituania 27
JP - Giappone 22
BG - Bulgaria 14
IR - Iran 14
HK - Hong Kong 11
RO - Romania 11
BR - Brasile 8
BD - Bangladesh 7
PT - Portogallo 7
LV - Lettonia 6
AU - Australia 5
DK - Danimarca 5
GR - Grecia 5
LB - Libano 5
IL - Israele 4
SC - Seychelles 4
TW - Taiwan 4
BJ - Benin 3
BY - Bielorussia 3
DZ - Algeria 3
MD - Moldavia 3
MY - Malesia 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AE - Emirati Arabi Uniti 2
CY - Cipro 2
HR - Croazia 2
IQ - Iraq 2
LA - Repubblica Popolare Democratica del Laos 2
MU - Mauritius 2
MZ - Mozambico 2
NO - Norvegia 2
NZ - Nuova Zelanda 2
PH - Filippine 2
UZ - Uzbekistan 2
VE - Venezuela 2
A1 - Anonimo 1
AL - Albania 1
AM - Armenia 1
AR - Argentina 1
ET - Etiopia 1
GN - Guinea 1
GT - Guatemala 1
HU - Ungheria 1
IS - Islanda 1
KG - Kirghizistan 1
KZ - Kazakistan 1
MN - Mongolia 1
MX - Messico 1
NG - Nigeria 1
PE - Perù 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
Totale 58.400
Salva come PNG Salva come JPEG
Città #
Southend 17.405
Dublin 7.810
Warsaw 2.178
Jacksonville 1.748
Chandler 1.121
Ann Arbor 722
Princeton 668
Nanjing 634
Wilmington 550
Mountain View 544
Ashburn 535
Montréal 510
Dearborn 505
Woodbridge 484
Munich 466
Dalmine 435
Dong Ket 434
Boardman 406
Toronto 399
Mcallen 362
Beijing 358
Fairfield 357
Houston 270
Shanghai 256
Nanchang 255
Milan 251
Sunnyvale 235
Atlanta 231
Bergamo 231
Altamura 230
Washington 221
Andover 218
San Mateo 215
Vienna 206
Rancio Valcuvia 182
Seattle 167
Moscow 138
Zhengzhou 137
Cambridge 133
Redwood City 120
Kunming 111
London 96
Ogden 96
New York 93
Singapore 86
Tianjin 84
Kiez 83
Shenyang 81
Hebei 79
Pavia 76
Fremont 66
Nürnberg 60
Hangzhou 59
Guangzhou 58
Jiaxing 57
Needham Heights 54
Brussels 49
Jakarta 47
Amsterdam 45
Kocaeli 43
Norwalk 43
Los Angeles 42
Changsha 41
Saint Petersburg 39
Brno 38
Changchun 35
Jinan 34
Lanzhou 33
Rome 30
Sakarya 30
Verdellino 29
Chicago 27
Segrate 25
San Diego 24
Santa Clara 24
Hounslow 22
Seoul 22
Westminster 22
Hefei 21
Vilnius 21
Kilburn 20
Ningbo 20
Frankfurt am Main 19
Helsinki 19
Madrid 19
Acton 18
Pisa 17
Serra 17
Auburn Hills 16
St Petersburg 16
Tappahannock 16
Redmond 15
Verona 15
Azzano Decimo 14
Falls Church 14
Hamburg 14
Islington 14
Olomouc 14
Duelmen 13
Lappeenranta 13
Totale 44.675
Salva come PNG Salva come JPEG
Nome #
PixFEL: Enabling technologies, building blocks and architectures for advanced X-ray pixel cameras at the next generation FELs 2.009
0.13μm CMOS technologies for analog front-end circuits in LHC detector upgrades 817
A 3D Vertically Integrated Deep N-Well CMOS MAPS for the SuperB Layer0 740
130 nm and 90 nm CMOS Technologies for Detector Front-end Applications 694
Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC 622
65 nm Technology for HEP: Status and Perspective 607
The SuperB Silicon Vertex Tracker 485
P-Type Silicon Strip Sensors for the new CMS Tracker at HL-LHC 484
A 65 nm CMOS Front-End Chip for High Density Readout of Pixel Sensors 465
A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs 455
3D DNW MAPS for High Resolution, Highly Efficient, Sparse Readout CMOS Detectors 426
2D and 3D CMOS MAPS with high performance pixel-level signal processing 417
Perspectives of 65nm CMOS technologies for high performance front-end electronics 416
Alignment of the CMS tracker with LHC and cosmic ray data 415
Characterization of SLVS Driver and Receiver in a 65 nm CMOS Technology for High Energy Physics Applications 404
Test beam demonstration of silicon microstrip modules with transverse momentum discrimination for the future CMS tracking detector 401
Precision measurement of the structure of the CMS inner tracking system using nuclear interactions 400
A 3D deep n-well CMOS MAPS for the ILC vertex detector 395
Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade 387
Monolithic pixel detectors in a 0.13 µm CMOS technology with sensor level continuous time charge amplification and shaping 381
Vertical integration approach to the readout of pixel detectors for vertexing applications 376
Beam test results for the SuperB-SVT thin striplet detector 374
Description and performance of track and primary-vertex reconstruction with the CMS tracker 373
A 65-nm CMOS Prototype Chip With Monolithic Pixel Sensors and Fast Front-End Electronics 368
Development of the DEPFET Sensor With Signal Compression: A Large Format X-Ray Imager With Mega-Frame Readout Capability for the European XFEL 364
The front-end chip of the SuperB SVT detector 361
Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker 356
Performance of a high accuracy injection circuit for in-pixel calibration of a large sensor matrix 355
Vertically integrated deep N-well CMOS MAPS with sparsification and time stamping capabilities for thin charged particle trackers 354
The SuperB silicon vertex tracker 352
The DSSC Pixel Readout ASIC with Amplitude Digitization and Local Storage for DEPFET Sensor Matrices at the European XFEL 346
Impact of lateral isolation oxides on radiation-induced noise degradation in CMOS technologies in the 100-nm regime 344
A new approach to the design of monolithic active pixel detectors in 0.13 µm triple well CMOS technology 340
Noise performance of 0.13 µm CMOS technologies for detector front-end applications 339
2D and 3D thin pixel technologies for the Layer0 of the SuperB Silicon Vertex Tracker 338
Thin pixel development for the superB silicon vertex tracker 337
Design of bandgap reference circuits in a 65 nm CMOS technology for HL-LHC applications 335
Mechanisms of Noise Degradation in Low Power 65 nm CMOS Transistors Exposed to Ionizing Radiation 325
Monolithic Active Pixel Sensors for the vertex detector at the International Linear Collider 321
The PixFEL project: development of advanced X-ray pixel detectors for application at future FEL facilities 319
Comprehensive study of total ionizing dose damage mechanisms and their effects on noise sources in a 90 nm CMOS technology 317
Vertically integrated monolithic pixel sensors for charged particle tracking and biomedical imaging 316
Radiation tolerance of devices and circuits in a 3D technology based on the vertical integration of two 130-nm CMOS layers 316
The Apsel65 front-end chip for the readout of pixel sensors in the 65 nm CMOS node 314
Forecasting noise and radiation hardness of CMOS front-end electronics beyond the 100 nm frontier 314
Fast Analog Front-end for the Readout of the SuperB SVT Inner Layers 311
Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology 310
First results from the characterization of a three-dimensional deep N-well MAPS prototype for vertexing applications 309
FSSR2, a self-triggered low noise readout chip for silicon strip detectors 306
Survey of noise performances and scaling effects in deep submicrometer CMOS devices from different foundries 305
Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics 304
CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments 303
Response of SOI bipolar transistors exposed to gamma-rays under different dose rate and bias conditions 302
High accuracy injection circuit for the calibration of a large pixel sensor matrix 302
Pixel-Level charge and current injection circuit for high accuracy calibration of the DSSC Chip at the European XFEL 302
Front-end performance and charge collection properties of heavily irradiated DNW MAPS 302
Investigating degradation mechanisms in 130nm and 90nm commercial CMOS technologies exposed to up to 100 Mrad ionizing radiation dose 302
Noise behavior of a 180 nm CMOS SOI technology for detector front-end electronics 301
A novel monolithic active pixel detector in a 0.13 µm triple well CMOS technology with pixel level analog processing 301
Recent results from the development of silicon detectors with integrated electronics 299
Introducing 65 nm CMOS technology in low-noise read-out of semiconductor detectors 297
High precision injection circuit for in-pixel calibration of a large sensor matrix 295
Assessment of a low-power 65 nm CMOS technology for analog front-end design 293
Gate Current Noise in Ultrathin Oxide MOSFETs and Its Impact on the Performance of Analog Front-End Circuits 292
A 2D imager for X-ray FELs with a 65 nm CMOS readout based on per-pixel signal compression and 10 bit A/D conversion 292
Review of radiation effects leading to noise performance degradation in 100-nm scale microelectronic technologies 290
TID-Induced Degradation in Static and Noise Behavior of Sub-100 nm Multifinger Bulk NMOSFETs 290
Active pixel sensors with enhanced pixel-level analog and digital functionalities in a 2-tier 3D CMOS technology 290
First prototype of a silicon microstrip detector with the data-driven readout chip FSSR2 for a tracking-based trigger system 288
The readout of the LHC beam luminosity monitor: accurate shower energy measurements at a 40 MHz repetition rate 286
Design criteria for low noise front-end electronics in the 0.13 µm CMOS generation 286
Fermilab silicon strip readout chip for BTeV 286
The design of fast analog channels for the readout of strip detectors in the inner layers of the SuperB SVT 286
CMOS MAPS with fully integrated, hybrid-pixel-like analog front-end electronics 284
MAPS with pixel level sparsified readout: from standard CMOS to vertical integration 284
Perspectives for low noise detector readout in a sub-quarter-micron CMOS SOI technology 280
Beam test results of different configurations of deep N-well MAPS matrices featuring in pixel full signal processing 280
Recent progress in the development of 3D deep n-well CMOS MAPS 279
CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking 278
Performance of a DNW CMOS active pixel sensor designed for the ILC Vertex Detector 277
Low-power clock distribution circuits for the Macro Pixel ASIC 277
Latest results of the R&D on CMOS MAPS for the Layer0 of the SuperB SVT 277
Pixel-Level Continuous-Time Analog Signal Processing for 130 nm CMOS MAPS 276
Design and Performance of Analog Circuits for DNW-MAPS in 100-nm-scale CMOS Technology 276
Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems 275
Deep N-well CMOS MAPS with in-pixel signal processing and sparsification for the ILC vertex detector 275
A 4096-pixel MAPS device with on-chip data sparsification 275
Proton-induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 274
Front-end electronics in a 65 nm CMOS process for high density readout of pixel sensors 273
A pixelated x-ray detector for diffraction imaging at next-generation high-rate FEL sources 272
Charge Signal Processors in Sparse Readout CMOS MAPS and Hybrid Pixel Sensors for the SuperB Layer0 271
Resolution limits in 130 nm and 90 nm CMOS technologies for analog front-end applications 271
FSSR2, a self-triggered low noise readout chip for silicon strip detectors 268
Recent developments on CMOS MAPS for the SuperB Silicon Vertex Tracker 267
R&D Progress on The SuperB Silicon Vertex Tracker 267
Minimum noise design of charge amplifiers with CMOS processes in the 100 nm feature size range 265
Investigating Degradation Mechanisms in 130 nm and 90 nm Commercial CMOS Technologies Under Extreme Radiation Conditions 262
Low noise design issues for analog front-end electronics in 130 nm and 90 nm CMOS technologies 262
Design and performance of a DNW CMOS Active Pixel Sensor for the ILC vertex detector 261
Beam test performance of prototype silicon detectors for the Outer Tracker for the Phase-2 Upgrade of CMS 261
Totale 35.671
Salva come PNG Salva come JPEG
Categoria #
all - tutte 152.651
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 152.651
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20205.054 0 0 809 755 533 442 675 298 669 260 267 346
2020/20219.465 905 558 485 563 613 840 1.053 307 1.008 1.027 1.321 785
2021/20226.425 545 794 357 428 621 946 290 309 385 710 665 375
2022/20235.169 811 595 784 758 442 653 67 213 367 99 228 152
2023/202410.100 133 242 287 204 330 2.118 5.892 345 189 46 59 255
2024/20251.121 367 584 170 0 0 0 0 0 0 0 0 0
Totale 59.851