MANGHISONI, Massimo
 Distribuzione geografica
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Continente #
EU - Europa 44.922
NA - Nord America 22.235
AS - Asia 10.713
SA - Sud America 755
AF - Africa 411
Continente sconosciuto - Info sul continente non disponibili 25
OC - Oceania 16
Totale 79.077
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Nazione #
US - Stati Uniti d'America 21.070
GB - Regno Unito 18.623
IE - Irlanda 7.865
RU - Federazione Russa 4.834
CN - Cina 4.589
SG - Singapore 3.465
IT - Italia 3.277
PL - Polonia 2.294
DE - Germania 2.241
FR - Francia 1.722
SE - Svezia 1.295
NL - Olanda 1.225
VN - Vietnam 1.060
CA - Canada 1.048
UA - Ucraina 591
BR - Brasile 549
IN - India 302
ZA - Sudafrica 294
AT - Austria 273
HK - Hong Kong 273
FI - Finlandia 267
KR - Corea 174
EU - Europa 161
TR - Turchia 150
BD - Bangladesh 113
JP - Giappone 107
IQ - Iraq 78
ES - Italia 72
AR - Argentina 69
ID - Indonesia 65
CH - Svizzera 61
MX - Messico 59
BE - Belgio 58
CZ - Repubblica Ceca 57
LT - Lituania 53
MY - Malesia 44
PK - Pakistan 39
CO - Colombia 32
PH - Filippine 31
RO - Romania 29
SA - Arabia Saudita 26
VE - Venezuela 25
CL - Cile 23
EC - Ecuador 22
UZ - Uzbekistan 22
BG - Bulgaria 19
TW - Taiwan 19
KE - Kenya 18
AE - Emirati Arabi Uniti 16
IR - Iran 16
JO - Giordania 16
MA - Marocco 15
TN - Tunisia 15
NP - Nepal 14
EG - Egitto 13
PE - Perù 13
PY - Paraguay 13
JM - Giamaica 12
LB - Libano 12
AU - Australia 11
DZ - Algeria 11
AZ - Azerbaigian 10
KZ - Kazakistan 10
PT - Portogallo 10
BH - Bahrain 9
ET - Etiopia 9
CR - Costa Rica 8
GR - Grecia 8
IL - Israele 8
LV - Lettonia 8
TH - Thailandia 8
HN - Honduras 7
BY - Bielorussia 6
DK - Danimarca 6
OM - Oman 6
PS - Palestinian Territory 6
BA - Bosnia-Erzegovina 5
BO - Bolivia 5
DO - Repubblica Dominicana 5
MU - Mauritius 5
NI - Nicaragua 5
SN - Senegal 5
AL - Albania 4
BJ - Benin 4
MD - Moldavia 4
MN - Mongolia 4
SC - Seychelles 4
AM - Armenia 3
BB - Barbados 3
CI - Costa d'Avorio 3
HU - Ungheria 3
NO - Norvegia 3
NZ - Nuova Zelanda 3
SY - Repubblica araba siriana 3
TT - Trinidad e Tobago 3
UY - Uruguay 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AO - Angola 2
BS - Bahamas 2
CY - Cipro 2
Totale 79.164
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Città #
Southend 17.405
Dublin 7.818
Warsaw 2.224
Ashburn 2.205
Jacksonville 1.757
San Jose 1.650
Moscow 1.471
Singapore 1.469
Chandler 1.121
Ann Arbor 722
Council Bluffs 716
Princeton 668
Hefei 653
Nanjing 636
Beijing 619
Wilmington 552
Mountain View 544
Montréal 510
Munich 509
Dearborn 505
Woodbridge 484
Dalmine 464
Dong Ket 434
Toronto 427
Boardman 407
Mcallen 362
Fairfield 357
Milan 326
Bergamo 315
Los Angeles 296
Houston 292
The Dalles 278
Shanghai 274
Atlanta 269
Johannesburg 268
Nanchang 256
Hong Kong 238
Sunnyvale 235
Vienna 233
Altamura 230
Washington 222
Lauterbourg 219
Andover 218
San Mateo 216
Ho Chi Minh City 206
New York 203
Santa Clara 184
Rancio Valcuvia 182
Seattle 177
Hanoi 159
Columbus 154
Buffalo 143
Zhengzhou 142
Cambridge 133
London 133
Dallas 132
Redwood City 120
Kunming 113
Tianjin 106
Guangzhou 103
Frankfurt am Main 98
Ogden 96
Kiez 83
Chicago 82
Shenyang 82
Orem 81
Helsinki 80
Hebei 79
Pavia 76
Amsterdam 69
Tokyo 68
Fremont 66
Hangzhou 65
São Paulo 65
Berlin 61
Nürnberg 60
Jiaxing 58
Redondo Beach 57
Brussels 56
Jakarta 54
Needham Heights 54
Changsha 53
Nuremberg 52
Montreal 46
Norwalk 46
Kocaeli 43
Seoul 42
Brooklyn 41
Chennai 39
Saint Petersburg 39
Brno 38
Rome 38
Denver 37
Jinan 36
Changchun 35
Boston 34
Lanzhou 33
Verdellino 33
Stockholm 31
Phoenix 30
Totale 55.700
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Nome #
PixFEL: Enabling technologies, building blocks and architectures for advanced X-ray pixel cameras at the next generation FELs 2.100
0.13μm CMOS technologies for analog front-end circuits in LHC detector upgrades 1.043
A 3D Vertically Integrated Deep N-Well CMOS MAPS for the SuperB Layer0 844
130 nm and 90 nm CMOS Technologies for Detector Front-end Applications 823
Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC 707
65 nm Technology for HEP: Status and Perspective 684
P-Type Silicon Strip Sensors for the new CMS Tracker at HL-LHC 615
A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs 596
The SuperB Silicon Vertex Tracker 584
A 65 nm CMOS Front-End Chip for High Density Readout of Pixel Sensors 563
3D DNW MAPS for High Resolution, Highly Efficient, Sparse Readout CMOS Detectors 540
A 3D deep n-well CMOS MAPS for the ILC vertex detector 522
Test beam demonstration of silicon microstrip modules with transverse momentum discrimination for the future CMS tracking detector 499
Monolithic pixel detectors in a 0.13 µm CMOS technology with sensor level continuous time charge amplification and shaping 496
2D and 3D CMOS MAPS with high performance pixel-level signal processing 491
Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade 490
Perspectives of 65nm CMOS technologies for high performance front-end electronics 486
Noise performance of 0.13 µm CMOS technologies for detector front-end applications 485
Precision measurement of the structure of the CMS inner tracking system using nuclear interactions 485
Characterization of SLVS Driver and Receiver in a 65 nm CMOS Technology for High Energy Physics Applications 482
Alignment of the CMS tracker with LHC and cosmic ray data 475
A 65-nm CMOS Prototype Chip With Monolithic Pixel Sensors and Fast Front-End Electronics 461
Assessment of a low-power 65 nm CMOS technology for analog front-end design 451
Beam test results for the SuperB-SVT thin striplet detector 449
Impact of lateral isolation oxides on radiation-induced noise degradation in CMOS technologies in the 100-nm regime 446
Development of the DEPFET Sensor With Signal Compression: A Large Format X-Ray Imager With Mega-Frame Readout Capability for the European XFEL 443
Description and performance of track and primary-vertex reconstruction with the CMS tracker 443
The DSSC Pixel Readout ASIC with Amplitude Digitization and Local Storage for DEPFET Sensor Matrices at the European XFEL 442
The SuperB silicon vertex tracker 439
Vertically integrated deep N-well CMOS MAPS with sparsification and time stamping capabilities for thin charged particle trackers 439
Vertical integration approach to the readout of pixel detectors for vertexing applications 437
The front-end chip of the SuperB SVT detector 436
Radiation tolerance of devices and circuits in a 3D technology based on the vertical integration of two 130-nm CMOS layers 432
Forecasting noise and radiation hardness of CMOS front-end electronics beyond the 100 nm frontier 431
Design of bandgap reference circuits in a 65 nm CMOS technology for HL-LHC applications 430
Survey of noise performances and scaling effects in deep submicrometer CMOS devices from different foundries 426
Performance of a high accuracy injection circuit for in-pixel calibration of a large sensor matrix 426
Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker 426
Comprehensive study of total ionizing dose damage mechanisms and their effects on noise sources in a 90 nm CMOS technology 424
FSSR2, a self-triggered low noise readout chip for silicon strip detectors 418
Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology 418
The PixFEL project: development of advanced X-ray pixel detectors for application at future FEL facilities 417
Mechanisms of Noise Degradation in Low Power 65 nm CMOS Transistors Exposed to Ionizing Radiation 414
2D and 3D thin pixel technologies for the Layer0 of the SuperB Silicon Vertex Tracker 406
Vertically integrated monolithic pixel sensors for charged particle tracking and biomedical imaging 406
Fast Analog Front-end for the Readout of the SuperB SVT Inner Layers 405
A 2D imager for X-ray FELs with a 65 nm CMOS readout based on per-pixel signal compression and 10 bit A/D conversion 401
A new approach to the design of monolithic active pixel detectors in 0.13 µm triple well CMOS technology 399
Front-end performance and charge collection properties of heavily irradiated DNW MAPS 396
Thin pixel development for the superB silicon vertex tracker 392
A pixelated x-ray detector for diffraction imaging at next-generation high-rate FEL sources 386
Investigating degradation mechanisms in 130nm and 90nm commercial CMOS technologies exposed to up to 100 Mrad ionizing radiation dose 386
A novel monolithic active pixel detector in a 0.13 µm triple well CMOS technology with pixel level analog processing 385
High precision injection circuit for in-pixel calibration of a large sensor matrix 383
Response of SOI bipolar transistors exposed to gamma-rays under different dose rate and bias conditions 381
Noise behavior of a 180 nm CMOS SOI technology for detector front-end electronics 376
High accuracy injection circuit for the calibration of a large pixel sensor matrix 376
Pixel-Level charge and current injection circuit for high accuracy calibration of the DSSC Chip at the European XFEL 376
The Apsel65 front-end chip for the readout of pixel sensors in the 65 nm CMOS node 371
Fermilab silicon strip readout chip for BTeV 371
Monolithic Active Pixel Sensors for the vertex detector at the International Linear Collider 371
Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics 368
Gate Current Noise in Ultrathin Oxide MOSFETs and Its Impact on the Performance of Analog Front-End Circuits 366
TID-Induced Degradation in Static and Noise Behavior of Sub-100 nm Multifinger Bulk NMOSFETs 366
Review of radiation effects leading to noise performance degradation in 100-nm scale microelectronic technologies 365
Design criteria for low noise front-end electronics in the 0.13 µm CMOS generation 364
First results from the characterization of a three-dimensional deep N-well MAPS prototype for vertexing applications 364
CMOS MAPS with fully integrated, hybrid-pixel-like analog front-end electronics 363
First prototype of a silicon microstrip detector with the data-driven readout chip FSSR2 for a tracking-based trigger system 360
Front-end electronics in a 65 nm CMOS process for high density readout of pixel sensors 358
CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments 358
The readout of the LHC beam luminosity monitor: accurate shower energy measurements at a 40 MHz repetition rate 357
The design of fast analog channels for the readout of strip detectors in the inner layers of the SuperB SVT 357
Investigating Degradation Mechanisms in 130 nm and 90 nm Commercial CMOS Technologies Under Extreme Radiation Conditions 354
MAPS with pixel level sparsified readout: from standard CMOS to vertical integration 354
Recent developments on CMOS MAPS for the SuperB Silicon Vertex Tracker 353
Recent results from the development of silicon detectors with integrated electronics 352
R&D Progress on The SuperB Silicon Vertex Tracker 352
65-nm CMOS Front-End Channel for Pixel Readout in the HL-LHC Radiation Environment 352
Introducing 65 nm CMOS technology in low-noise read-out of semiconductor detectors 351
A Front-End Channel in 65 nm CMOS for Pixel Detectors at the HL-LHC Experiment Upgrades 350
Charge Signal Processors in Sparse Readout CMOS MAPS and Hybrid Pixel Sensors for the SuperB Layer0 348
A 4096-pixel MAPS device with on-chip data sparsification 348
Performance of a DNW CMOS active pixel sensor designed for the ILC Vertex Detector 347
Pixel-Level Continuous-Time Analog Signal Processing for 130 nm CMOS MAPS 347
Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems 346
Proton-induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 344
Design and Performance of Analog Circuits for DNW-MAPS in 100-nm-scale CMOS Technology 344
Instrumentation for gate current noise measurements on sub-100 nm MOS transistors 342
Minimum noise design of charge amplifiers with CMOS processes in the 100 nm feature size range 342
Latest results of the R&D on CMOS MAPS for the Layer0 of the SuperB SVT 342
Beam test performance of prototype silicon detectors for the Outer Tracker for the Phase-2 Upgrade of CMS 341
TID effects in deep N-well CMOS monolithic active pixel sensors 340
Perspectives for low noise detector readout in a sub-quarter-micron CMOS SOI technology 340
Beam test results of different configurations of deep N-well MAPS matrices featuring in pixel full signal processing 339
Low noise design issues for analog front-end electronics in 130 nm and 90 nm CMOS technologies 339
Dynamic compression of the signal in a charge sensitive amplifier: from concept to design 338
CMOS MAPS in a homogeneous 3D process for charged particle tracking 336
Active pixel sensors with enhanced pixel-level analog and digital functionalities in a 2-tier 3D CMOS technology 336
CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking 335
Totale 44.183
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Categoria #
all - tutte 238.156
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 238.156
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021785 0 0 0 0 0 0 0 0 0 0 0 785
2021/20226.425 545 794 357 428 621 946 290 309 385 710 665 375
2022/20235.169 811 595 784 758 442 653 67 213 367 99 228 152
2023/202410.100 133 242 287 204 330 2.118 5.892 345 189 46 59 255
2024/20257.501 367 584 374 1.102 178 147 104 386 614 1.475 1.253 917
2025/202614.511 650 761 1.029 1.315 2.427 1.058 2.440 829 1.246 1.083 770 903
Totale 80.742