MANGHISONI, Massimo
 Distribuzione geografica
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Continente #
EU - Europa 39.977
NA - Nord America 15.255
AS - Asia 4.419
Continente sconosciuto - Info sul continente non disponibili 23
AF - Africa 18
SA - Sud America 15
OC - Oceania 9
Totale 59.716
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Nazione #
GB - Regno Unito 18.455
US - Stati Uniti d'America 14.324
IE - Irlanda 7.856
CN - Cina 2.971
IT - Italia 2.917
RU - Federazione Russa 2.531
PL - Polonia 2.182
DE - Germania 1.990
FR - Francia 1.402
SE - Svezia 1.262
CA - Canada 928
UA - Ucraina 572
SG - Singapore 496
VN - Vietnam 440
AT - Austria 218
FI - Finlandia 171
EU - Europa 161
KR - Corea 150
NL - Olanda 132
IN - India 128
TR - Turchia 95
CH - Svizzera 57
CZ - Repubblica Ceca 56
BE - Belgio 52
ID - Indonesia 47
ES - Italia 33
LT - Lituania 27
JP - Giappone 22
BG - Bulgaria 15
IR - Iran 14
HK - Hong Kong 12
RO - Romania 11
BR - Brasile 8
PT - Portogallo 8
BD - Bangladesh 7
AU - Australia 6
GR - Grecia 6
LV - Lettonia 6
DK - Danimarca 5
LB - Libano 5
IL - Israele 4
MY - Malesia 4
SC - Seychelles 4
TW - Taiwan 4
BJ - Benin 3
BY - Bielorussia 3
DZ - Algeria 3
MD - Moldavia 3
NZ - Nuova Zelanda 3
PE - Perù 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AE - Emirati Arabi Uniti 2
CY - Cipro 2
HR - Croazia 2
IQ - Iraq 2
LA - Repubblica Popolare Democratica del Laos 2
MU - Mauritius 2
MZ - Mozambico 2
NO - Norvegia 2
PH - Filippine 2
UZ - Uzbekistan 2
VE - Venezuela 2
A1 - Anonimo 1
AL - Albania 1
AM - Armenia 1
AR - Argentina 1
AZ - Azerbaigian 1
CL - Cile 1
ET - Etiopia 1
GN - Guinea 1
GT - Guatemala 1
HU - Ungheria 1
IS - Islanda 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LK - Sri Lanka 1
MA - Marocco 1
MN - Mongolia 1
MX - Messico 1
NG - Nigeria 1
PA - Panama 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
Totale 59.857
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Città #
Southend 17.405
Dublin 7.810
Warsaw 2.178
Jacksonville 1.748
Chandler 1.121
Ann Arbor 722
Princeton 668
Nanjing 634
Wilmington 550
Mountain View 544
Ashburn 539
Montréal 510
Dearborn 505
Woodbridge 484
Munich 469
Dalmine 438
Dong Ket 434
Boardman 406
Toronto 400
Mcallen 362
Beijing 360
Fairfield 357
Houston 270
Milan 260
Singapore 258
Shanghai 257
Nanchang 255
Bergamo 254
Sunnyvale 235
Atlanta 231
Altamura 230
Washington 222
Andover 218
San Mateo 215
Vienna 207
Rancio Valcuvia 182
Seattle 167
Moscow 138
Zhengzhou 137
Cambridge 133
Redwood City 120
Kunming 111
London 97
Ogden 96
New York 93
Tianjin 84
Kiez 83
Shenyang 81
Hebei 79
Pavia 76
Fremont 66
Nürnberg 60
Guangzhou 59
Hangzhou 59
Jiaxing 57
Needham Heights 54
Brussels 50
Jakarta 47
Amsterdam 45
Los Angeles 44
Kocaeli 43
Norwalk 43
Changsha 41
Saint Petersburg 39
Brno 38
Changchun 35
Jinan 35
Lanzhou 33
Santa Clara 33
Rome 30
Sakarya 30
Verdellino 29
Chicago 27
Frankfurt am Main 27
Segrate 25
San Diego 24
Hamburg 23
Hounslow 22
Seoul 22
Westminster 22
Hefei 21
Helsinki 21
Spirano 21
Vilnius 21
Kilburn 20
Ningbo 20
Pisa 20
Madrid 19
Acton 18
Istanbul 17
Serra 17
Auburn Hills 16
St Petersburg 16
Tappahannock 16
Redmond 15
Verona 15
Azzano Decimo 14
Falls Church 14
Islington 14
Olomouc 14
Totale 44.944
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Nome #
PixFEL: Enabling technologies, building blocks and architectures for advanced X-ray pixel cameras at the next generation FELs 2.019
0.13μm CMOS technologies for analog front-end circuits in LHC detector upgrades 836
A 3D Vertically Integrated Deep N-Well CMOS MAPS for the SuperB Layer0 748
130 nm and 90 nm CMOS Technologies for Detector Front-end Applications 705
Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC 630
65 nm Technology for HEP: Status and Perspective 611
The SuperB Silicon Vertex Tracker 497
P-Type Silicon Strip Sensors for the new CMS Tracker at HL-LHC 496
A 65 nm CMOS Front-End Chip for High Density Readout of Pixel Sensors 476
A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs 465
3D DNW MAPS for High Resolution, Highly Efficient, Sparse Readout CMOS Detectors 436
2D and 3D CMOS MAPS with high performance pixel-level signal processing 425
Alignment of the CMS tracker with LHC and cosmic ray data 424
Perspectives of 65nm CMOS technologies for high performance front-end electronics 420
Precision measurement of the structure of the CMS inner tracking system using nuclear interactions 410
Test beam demonstration of silicon microstrip modules with transverse momentum discrimination for the future CMS tracking detector 409
Characterization of SLVS Driver and Receiver in a 65 nm CMOS Technology for High Energy Physics Applications 409
A 3D deep n-well CMOS MAPS for the ILC vertex detector 403
Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade 394
Monolithic pixel detectors in a 0.13 µm CMOS technology with sensor level continuous time charge amplification and shaping 392
Beam test results for the SuperB-SVT thin striplet detector 381
Vertical integration approach to the readout of pixel detectors for vertexing applications 381
Description and performance of track and primary-vertex reconstruction with the CMS tracker 376
A 65-nm CMOS Prototype Chip With Monolithic Pixel Sensors and Fast Front-End Electronics 373
Development of the DEPFET Sensor With Signal Compression: A Large Format X-Ray Imager With Mega-Frame Readout Capability for the European XFEL 371
The front-end chip of the SuperB SVT detector 368
Vertically integrated deep N-well CMOS MAPS with sparsification and time stamping capabilities for thin charged particle trackers 364
Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker 361
Performance of a high accuracy injection circuit for in-pixel calibration of a large sensor matrix 360
The SuperB silicon vertex tracker 355
The DSSC Pixel Readout ASIC with Amplitude Digitization and Local Storage for DEPFET Sensor Matrices at the European XFEL 354
Impact of lateral isolation oxides on radiation-induced noise degradation in CMOS technologies in the 100-nm regime 354
2D and 3D thin pixel technologies for the Layer0 of the SuperB Silicon Vertex Tracker 348
Noise performance of 0.13 µm CMOS technologies for detector front-end applications 348
A new approach to the design of monolithic active pixel detectors in 0.13 µm triple well CMOS technology 346
Thin pixel development for the superB silicon vertex tracker 342
Design of bandgap reference circuits in a 65 nm CMOS technology for HL-LHC applications 340
Mechanisms of Noise Degradation in Low Power 65 nm CMOS Transistors Exposed to Ionizing Radiation 334
Radiation tolerance of devices and circuits in a 3D technology based on the vertical integration of two 130-nm CMOS layers 327
Comprehensive study of total ionizing dose damage mechanisms and their effects on noise sources in a 90 nm CMOS technology 326
The PixFEL project: development of advanced X-ray pixel detectors for application at future FEL facilities 325
Monolithic Active Pixel Sensors for the vertex detector at the International Linear Collider 324
Forecasting noise and radiation hardness of CMOS front-end electronics beyond the 100 nm frontier 323
Fast Analog Front-end for the Readout of the SuperB SVT Inner Layers 321
Vertically integrated monolithic pixel sensors for charged particle tracking and biomedical imaging 320
Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology 319
The Apsel65 front-end chip for the readout of pixel sensors in the 65 nm CMOS node 317
Survey of noise performances and scaling effects in deep submicrometer CMOS devices from different foundries 314
FSSR2, a self-triggered low noise readout chip for silicon strip detectors 314
First results from the characterization of a three-dimensional deep N-well MAPS prototype for vertexing applications 313
High accuracy injection circuit for the calibration of a large pixel sensor matrix 311
Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics 310
Assessment of a low-power 65 nm CMOS technology for analog front-end design 309
Front-end performance and charge collection properties of heavily irradiated DNW MAPS 308
CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments 307
A novel monolithic active pixel detector in a 0.13 µm triple well CMOS technology with pixel level analog processing 307
Response of SOI bipolar transistors exposed to gamma-rays under different dose rate and bias conditions 307
Pixel-Level charge and current injection circuit for high accuracy calibration of the DSSC Chip at the European XFEL 307
Noise behavior of a 180 nm CMOS SOI technology for detector front-end electronics 306
Investigating degradation mechanisms in 130nm and 90nm commercial CMOS technologies exposed to up to 100 Mrad ionizing radiation dose 306
Recent results from the development of silicon detectors with integrated electronics 304
Introducing 65 nm CMOS technology in low-noise read-out of semiconductor detectors 301
High precision injection circuit for in-pixel calibration of a large sensor matrix 300
A 2D imager for X-ray FELs with a 65 nm CMOS readout based on per-pixel signal compression and 10 bit A/D conversion 300
Gate Current Noise in Ultrathin Oxide MOSFETs and Its Impact on the Performance of Analog Front-End Circuits 297
Review of radiation effects leading to noise performance degradation in 100-nm scale microelectronic technologies 294
Active pixel sensors with enhanced pixel-level analog and digital functionalities in a 2-tier 3D CMOS technology 294
TID-Induced Degradation in Static and Noise Behavior of Sub-100 nm Multifinger Bulk NMOSFETs 292
First prototype of a silicon microstrip detector with the data-driven readout chip FSSR2 for a tracking-based trigger system 292
The readout of the LHC beam luminosity monitor: accurate shower energy measurements at a 40 MHz repetition rate 291
Design criteria for low noise front-end electronics in the 0.13 µm CMOS generation 290
Fermilab silicon strip readout chip for BTeV 290
CMOS MAPS with fully integrated, hybrid-pixel-like analog front-end electronics 289
MAPS with pixel level sparsified readout: from standard CMOS to vertical integration 289
The design of fast analog channels for the readout of strip detectors in the inner layers of the SuperB SVT 289
Perspectives for low noise detector readout in a sub-quarter-micron CMOS SOI technology 284
Beam test results of different configurations of deep N-well MAPS matrices featuring in pixel full signal processing 284
Latest results of the R&D on CMOS MAPS for the Layer0 of the SuperB SVT 284
Recent progress in the development of 3D deep n-well CMOS MAPS 283
Performance of a DNW CMOS active pixel sensor designed for the ILC Vertex Detector 281
Low-power clock distribution circuits for the Macro Pixel ASIC 280
Pixel-Level Continuous-Time Analog Signal Processing for 130 nm CMOS MAPS 280
CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking 280
A 4096-pixel MAPS device with on-chip data sparsification 280
A pixelated x-ray detector for diffraction imaging at next-generation high-rate FEL sources 280
Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems 279
Deep N-well CMOS MAPS with in-pixel signal processing and sparsification for the ILC vertex detector 279
Design and Performance of Analog Circuits for DNW-MAPS in 100-nm-scale CMOS Technology 279
Front-end electronics in a 65 nm CMOS process for high density readout of pixel sensors 277
Proton-induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 277
Charge Signal Processors in Sparse Readout CMOS MAPS and Hybrid Pixel Sensors for the SuperB Layer0 276
R&D Progress on The SuperB Silicon Vertex Tracker 274
Recent developments on CMOS MAPS for the SuperB Silicon Vertex Tracker 273
FSSR2, a self-triggered low noise readout chip for silicon strip detectors 273
Resolution limits in 130 nm and 90 nm CMOS technologies for analog front-end applications 272
Low noise design issues for analog front-end electronics in 130 nm and 90 nm CMOS technologies 270
Minimum noise design of charge amplifiers with CMOS processes in the 100 nm feature size range 268
Investigating Degradation Mechanisms in 130 nm and 90 nm Commercial CMOS Technologies Under Extreme Radiation Conditions 267
Beam test performance of prototype silicon detectors for the Outer Tracker for the Phase-2 Upgrade of CMS 266
Design and performance of a DNW CMOS Active Pixel Sensor for the ILC vertex detector 264
Totale 36.304
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Categoria #
all - tutte 160.694
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 160.694
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20203.490 0 0 0 0 533 442 675 298 669 260 267 346
2020/20219.465 905 558 485 563 613 840 1.053 307 1.008 1.027 1.321 785
2021/20226.425 545 794 357 428 621 946 290 309 385 710 665 375
2022/20235.169 811 595 784 758 442 653 67 213 367 99 228 152
2023/202410.100 133 242 287 204 330 2.118 5.892 345 189 46 59 255
2024/20252.581 367 584 374 1.102 154 0 0 0 0 0 0 0
Totale 61.311