MANGHISONI, Massimo
 Distribuzione geografica
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Continente #
EU - Europa 44.285
NA - Nord America 17.742
AS - Asia 8.151
SA - Sud America 530
AF - Africa 331
Continente sconosciuto - Info sul continente non disponibili 24
OC - Oceania 14
Totale 71.077
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Nazione #
GB - Regno Unito 18.563
US - Stati Uniti d'America 16.686
IE - Irlanda 7.861
RU - Federazione Russa 4.833
CN - Cina 4.130
IT - Italia 3.124
SG - Singapore 2.598
PL - Polonia 2.281
DE - Germania 2.188
FR - Francia 1.481
SE - Svezia 1.288
NL - Olanda 1.202
CA - Canada 994
UA - Ucraina 581
VN - Vietnam 565
BR - Brasile 435
ZA - Sudafrica 276
AT - Austria 272
FI - Finlandia 231
IN - India 179
EU - Europa 161
KR - Corea 156
TR - Turchia 117
HK - Hong Kong 85
ES - Italia 64
JP - Giappone 61
CH - Svizzera 59
BE - Belgio 58
CZ - Repubblica Ceca 57
ID - Indonesia 50
LT - Lituania 49
MX - Messico 41
BD - Bangladesh 39
AR - Argentina 31
IQ - Iraq 29
RO - Romania 27
MY - Malesia 25
BG - Bulgaria 17
IR - Iran 15
AE - Emirati Arabi Uniti 13
CO - Colombia 13
TW - Taiwan 13
EC - Ecuador 11
PE - Perù 10
PK - Pakistan 10
AU - Australia 9
PT - Portogallo 9
PY - Paraguay 9
UZ - Uzbekistan 9
JO - Giordania 8
LV - Lettonia 8
MA - Marocco 8
VE - Venezuela 8
CL - Cile 7
GR - Grecia 7
KE - Kenya 7
DK - Danimarca 6
DZ - Algeria 6
SA - Arabia Saudita 6
DO - Repubblica Dominicana 5
LB - Libano 5
NP - Nepal 5
TN - Tunisia 5
BJ - Benin 4
BY - Bielorussia 4
IL - Israele 4
SC - Seychelles 4
AZ - Azerbaigian 3
BH - Bahrain 3
CR - Costa Rica 3
MD - Moldavia 3
MU - Mauritius 3
NO - Norvegia 3
NZ - Nuova Zelanda 3
PH - Filippine 3
UY - Uruguay 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AM - Armenia 2
BO - Bolivia 2
CI - Costa d'Avorio 2
CY - Cipro 2
EG - Egitto 2
ET - Etiopia 2
GT - Guatemala 2
HR - Croazia 2
KG - Kirghizistan 2
KZ - Kazakistan 2
LA - Repubblica Popolare Democratica del Laos 2
MN - Mongolia 2
MZ - Mozambico 2
PA - Panama 2
PS - Palestinian Territory 2
TH - Thailandia 2
A1 - Anonimo 1
AL - Albania 1
AO - Angola 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BW - Botswana 1
CG - Congo 1
Totale 71.190
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Città #
Southend 17.405
Dublin 7.814
Warsaw 2.213
Jacksonville 1.750
Moscow 1.477
Ashburn 1.225
Chandler 1.121
Singapore 1.070
Ann Arbor 722
Princeton 668
Hefei 652
Nanjing 635
Beijing 592
Wilmington 552
Mountain View 544
Montréal 510
Munich 509
Dearborn 505
Woodbridge 484
Dalmine 438
Dong Ket 434
Toronto 415
Boardman 407
Mcallen 362
Fairfield 357
Milan 317
Bergamo 290
Houston 279
The Dalles 278
Johannesburg 266
Shanghai 264
Atlanta 259
Nanchang 255
Sunnyvale 235
Altamura 230
Vienna 230
Los Angeles 227
Washington 222
Andover 218
San Mateo 215
Rancio Valcuvia 182
Seattle 178
New York 175
Zhengzhou 142
Buffalo 136
Cambridge 133
London 124
Redwood City 120
Kunming 112
Dallas 110
Ogden 96
Tianjin 94
Kiez 83
Shenyang 82
Hebei 79
Guangzhou 76
Pavia 76
Hong Kong 74
Chicago 72
Santa Clara 71
Fremont 66
Frankfurt am Main 61
Hangzhou 61
Berlin 60
Nürnberg 60
Amsterdam 58
Jiaxing 58
Redondo Beach 57
Brussels 56
Needham Heights 54
Changsha 53
São Paulo 53
Helsinki 52
Ho Chi Minh City 50
Jakarta 49
Nuremberg 45
Norwalk 44
Kocaeli 43
Saint Petersburg 39
Brno 38
Changchun 35
Jinan 35
Hanoi 33
Lanzhou 33
Verdellino 33
Brooklyn 32
Rome 32
Tokyo 31
Sakarya 30
Boston 28
Denver 28
Montreal 28
Seoul 27
Stockholm 27
Vilnius 26
Falkenstein 25
San Diego 25
Segrate 25
Hamburg 24
Pisa 24
Totale 50.499
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Nome #
PixFEL: Enabling technologies, building blocks and architectures for advanced X-ray pixel cameras at the next generation FELs 2.068
0.13μm CMOS technologies for analog front-end circuits in LHC detector upgrades 968
A 3D Vertically Integrated Deep N-Well CMOS MAPS for the SuperB Layer0 810
130 nm and 90 nm CMOS Technologies for Detector Front-end Applications 770
Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC 685
65 nm Technology for HEP: Status and Perspective 656
P-Type Silicon Strip Sensors for the new CMS Tracker at HL-LHC 571
The SuperB Silicon Vertex Tracker 551
A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs 544
A 65 nm CMOS Front-End Chip for High Density Readout of Pixel Sensors 527
3D DNW MAPS for High Resolution, Highly Efficient, Sparse Readout CMOS Detectors 491
A 3D deep n-well CMOS MAPS for the ILC vertex detector 471
Test beam demonstration of silicon microstrip modules with transverse momentum discrimination for the future CMS tracking detector 467
Precision measurement of the structure of the CMS inner tracking system using nuclear interactions 465
Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade 464
2D and 3D CMOS MAPS with high performance pixel-level signal processing 462
Alignment of the CMS tracker with LHC and cosmic ray data 460
Characterization of SLVS Driver and Receiver in a 65 nm CMOS Technology for High Energy Physics Applications 459
Perspectives of 65nm CMOS technologies for high performance front-end electronics 455
Monolithic pixel detectors in a 0.13 µm CMOS technology with sensor level continuous time charge amplification and shaping 447
Noise performance of 0.13 µm CMOS technologies for detector front-end applications 428
Beam test results for the SuperB-SVT thin striplet detector 424
A 65-nm CMOS Prototype Chip With Monolithic Pixel Sensors and Fast Front-End Electronics 417
Development of the DEPFET Sensor With Signal Compression: A Large Format X-Ray Imager With Mega-Frame Readout Capability for the European XFEL 416
Vertical integration approach to the readout of pixel detectors for vertexing applications 416
Impact of lateral isolation oxides on radiation-induced noise degradation in CMOS technologies in the 100-nm regime 410
Description and performance of track and primary-vertex reconstruction with the CMS tracker 409
The front-end chip of the SuperB SVT detector 408
Performance of a high accuracy injection circuit for in-pixel calibration of a large sensor matrix 404
The DSSC Pixel Readout ASIC with Amplitude Digitization and Local Storage for DEPFET Sensor Matrices at the European XFEL 402
The SuperB silicon vertex tracker 401
Vertically integrated deep N-well CMOS MAPS with sparsification and time stamping capabilities for thin charged particle trackers 401
Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker 398
Assessment of a low-power 65 nm CMOS technology for analog front-end design 392
Design of bandgap reference circuits in a 65 nm CMOS technology for HL-LHC applications 389
Comprehensive study of total ionizing dose damage mechanisms and their effects on noise sources in a 90 nm CMOS technology 386
Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology 386
Radiation tolerance of devices and circuits in a 3D technology based on the vertical integration of two 130-nm CMOS layers 385
2D and 3D thin pixel technologies for the Layer0 of the SuperB Silicon Vertex Tracker 384
Forecasting noise and radiation hardness of CMOS front-end electronics beyond the 100 nm frontier 384
Mechanisms of Noise Degradation in Low Power 65 nm CMOS Transistors Exposed to Ionizing Radiation 383
The PixFEL project: development of advanced X-ray pixel detectors for application at future FEL facilities 377
A new approach to the design of monolithic active pixel detectors in 0.13 µm triple well CMOS technology 377
Survey of noise performances and scaling effects in deep submicrometer CMOS devices from different foundries 375
FSSR2, a self-triggered low noise readout chip for silicon strip detectors 375
Thin pixel development for the superB silicon vertex tracker 367
Fast Analog Front-end for the Readout of the SuperB SVT Inner Layers 363
Vertically integrated monolithic pixel sensors for charged particle tracking and biomedical imaging 362
Front-end performance and charge collection properties of heavily irradiated DNW MAPS 353
Monolithic Active Pixel Sensors for the vertex detector at the International Linear Collider 352
Noise behavior of a 180 nm CMOS SOI technology for detector front-end electronics 351
High accuracy injection circuit for the calibration of a large pixel sensor matrix 350
A 2D imager for X-ray FELs with a 65 nm CMOS readout based on per-pixel signal compression and 10 bit A/D conversion 350
The Apsel65 front-end chip for the readout of pixel sensors in the 65 nm CMOS node 349
Investigating degradation mechanisms in 130nm and 90nm commercial CMOS technologies exposed to up to 100 Mrad ionizing radiation dose 348
High precision injection circuit for in-pixel calibration of a large sensor matrix 345
A novel monolithic active pixel detector in a 0.13 µm triple well CMOS technology with pixel level analog processing 344
Response of SOI bipolar transistors exposed to gamma-rays under different dose rate and bias conditions 343
Pixel-Level charge and current injection circuit for high accuracy calibration of the DSSC Chip at the European XFEL 342
CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments 340
Review of radiation effects leading to noise performance degradation in 100-nm scale microelectronic technologies 340
Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics 338
First results from the characterization of a three-dimensional deep N-well MAPS prototype for vertexing applications 337
Gate Current Noise in Ultrathin Oxide MOSFETs and Its Impact on the Performance of Analog Front-End Circuits 335
A pixelated x-ray detector for diffraction imaging at next-generation high-rate FEL sources 335
Fermilab silicon strip readout chip for BTeV 332
Recent results from the development of silicon detectors with integrated electronics 332
Introducing 65 nm CMOS technology in low-noise read-out of semiconductor detectors 329
TID-Induced Degradation in Static and Noise Behavior of Sub-100 nm Multifinger Bulk NMOSFETs 327
R&D Progress on The SuperB Silicon Vertex Tracker 327
MAPS with pixel level sparsified readout: from standard CMOS to vertical integration 326
Design criteria for low noise front-end electronics in the 0.13 µm CMOS generation 325
The readout of the LHC beam luminosity monitor: accurate shower energy measurements at a 40 MHz repetition rate 321
First prototype of a silicon microstrip detector with the data-driven readout chip FSSR2 for a tracking-based trigger system 321
Latest results of the R&D on CMOS MAPS for the Layer0 of the SuperB SVT 321
The design of fast analog channels for the readout of strip detectors in the inner layers of the SuperB SVT 320
A 4096-pixel MAPS device with on-chip data sparsification 320
Front-end electronics in a 65 nm CMOS process for high density readout of pixel sensors 319
Perspectives for low noise detector readout in a sub-quarter-micron CMOS SOI technology 319
Beam test performance of prototype silicon detectors for the Outer Tracker for the Phase-2 Upgrade of CMS 319
Charge Signal Processors in Sparse Readout CMOS MAPS and Hybrid Pixel Sensors for the SuperB Layer0 318
CMOS MAPS with fully integrated, hybrid-pixel-like analog front-end electronics 318
Recent developments on CMOS MAPS for the SuperB Silicon Vertex Tracker 317
Performance of a DNW CMOS active pixel sensor designed for the ILC Vertex Detector 315
Recent progress in the development of 3D deep n-well CMOS MAPS 314
Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems 313
Pixel-Level Continuous-Time Analog Signal Processing for 130 nm CMOS MAPS 313
Active pixel sensors with enhanced pixel-level analog and digital functionalities in a 2-tier 3D CMOS technology 313
Beam test results of different configurations of deep N-well MAPS matrices featuring in pixel full signal processing 311
Investigating Degradation Mechanisms in 130 nm and 90 nm Commercial CMOS Technologies Under Extreme Radiation Conditions 310
FSSR2, a self-triggered low noise readout chip for silicon strip detectors 309
Design and Performance of Analog Circuits for DNW-MAPS in 100-nm-scale CMOS Technology 308
CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking 307
65-nm CMOS Front-End Channel for Pixel Readout in the HL-LHC Radiation Environment 306
Low noise design issues for analog front-end electronics in 130 nm and 90 nm CMOS technologies 305
Proton-induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 304
Deep N-well CMOS MAPS with in-pixel signal processing and sparsification for the ILC vertex detector 304
65 nm CMOS analog front-end for pixel detectors at the HL-LHC 304
Low-power clock distribution circuits for the Macro Pixel ASIC 302
TID effects in deep N-well CMOS monolithic active pixel sensors 302
Totale 40.713
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Categoria #
all - tutte 214.330
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 214.330
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20216.341 0 0 0 0 0 840 1.053 307 1.008 1.027 1.321 785
2021/20226.425 545 794 357 428 621 946 290 309 385 710 665 375
2022/20235.169 811 595 784 758 442 653 67 213 367 99 228 152
2023/202410.100 133 242 287 204 330 2.118 5.892 345 189 46 59 255
2024/20257.501 367 584 374 1.102 178 147 104 386 614 1.475 1.253 917
2025/20266.502 650 761 1.029 1.339 2.447 276 0 0 0 0 0 0
Totale 72.733