MANGHISONI, Massimo
 Distribuzione geografica
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Continente #
EU - Europa 45.069
NA - Nord America 22.875
AS - Asia 10.800
Continente sconosciuto - Info sul continente non disponibili 1.693
SA - Sud America 765
AF - Africa 413
OC - Oceania 16
Totale 81.631
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Nazione #
US - Stati Uniti d'America 21.666
GB - Regno Unito 18.626
IE - Irlanda 7.865
RU - Federazione Russa 4.834
CN - Cina 4.610
SG - Singapore 3.496
IT - Italia 3.365
PL - Polonia 2.295
DE - Germania 2.245
FR - Francia 1.724
SE - Svezia 1.332
NL - Olanda 1.228
CA - Canada 1.073
VN - Vietnam 1.061
UA - Ucraina 592
BR - Brasile 554
IN - India 302
ZA - Sudafrica 294
HK - Hong Kong 283
AT - Austria 273
FI - Finlandia 267
KR - Corea 174
EU - Europa 161
TR - Turchia 151
BD - Bangladesh 130
JP - Giappone 109
ES - Italia 78
IQ - Iraq 78
AR - Argentina 69
ID - Indonesia 66
MX - Messico 62
CH - Svizzera 61
BE - Belgio 58
CZ - Repubblica Ceca 58
LT - Lituania 53
MY - Malesia 45
PK - Pakistan 39
CO - Colombia 34
PH - Filippine 31
RO - Romania 29
SA - Arabia Saudita 26
VE - Venezuela 25
CL - Cile 23
EC - Ecuador 23
UZ - Uzbekistan 22
TW - Taiwan 20
BG - Bulgaria 19
KE - Kenya 18
AE - Emirati Arabi Uniti 16
IR - Iran 16
JO - Giordania 16
JM - Giamaica 15
MA - Marocco 15
TN - Tunisia 15
NP - Nepal 14
EG - Egitto 13
PE - Perù 13
PY - Paraguay 13
LB - Libano 12
AU - Australia 11
DZ - Algeria 11
AZ - Azerbaigian 10
CR - Costa Rica 10
KZ - Kazakistan 10
PT - Portogallo 10
BH - Bahrain 9
ET - Etiopia 9
HN - Honduras 9
IL - Israele 9
GR - Grecia 8
LV - Lettonia 8
TH - Thailandia 8
BY - Bielorussia 6
DK - Danimarca 6
NI - Nicaragua 6
OM - Oman 6
PS - Palestinian Territory 6
SC - Seychelles 6
TT - Trinidad e Tobago 6
BA - Bosnia-Erzegovina 5
BO - Bolivia 5
DO - Repubblica Dominicana 5
MU - Mauritius 5
SN - Senegal 5
UY - Uruguay 5
AL - Albania 4
BJ - Benin 4
GT - Guatemala 4
MD - Moldavia 4
MN - Mongolia 4
NO - Norvegia 4
AM - Armenia 3
BB - Barbados 3
BS - Bahamas 3
CI - Costa d'Avorio 3
HU - Ungheria 3
NZ - Nuova Zelanda 3
PR - Porto Rico 3
SY - Repubblica araba siriana 3
A2 - ???statistics.table.value.countryCode.A2??? 2
Totale 80.049
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Città #
Southend 17.405
Dublin 7.818
Ashburn 2.272
Warsaw 2.224
Jacksonville 1.759
San Jose 1.662
Singapore 1.483
Moscow 1.471
Chandler 1.121
Council Bluffs 922
Ann Arbor 722
Princeton 668
Hefei 653
Nanjing 636
Beijing 627
Wilmington 552
Mountain View 544
Montréal 510
Munich 509
Dearborn 505
Woodbridge 484
Dalmine 475
Dong Ket 434
Toronto 427
Boardman 407
Mcallen 362
Fairfield 357
Milan 345
Bergamo 315
Los Angeles 303
Houston 293
Shanghai 280
The Dalles 278
Atlanta 272
Johannesburg 268
Santa Clara 264
Nanchang 256
Hong Kong 247
Sunnyvale 235
Vienna 233
Altamura 230
Washington 224
Lauterbourg 219
Andover 218
San Mateo 216
Ho Chi Minh City 207
New York 207
Rancio Valcuvia 182
Columbus 178
Seattle 178
Hanoi 159
Dallas 144
Buffalo 143
Zhengzhou 142
Cambridge 133
London 133
Redwood City 120
Kunming 113
Tianjin 106
Guangzhou 103
Frankfurt am Main 99
Ogden 96
Chicago 87
Kiez 83
Shenyang 82
Orem 81
Helsinki 80
Hebei 79
Pavia 76
Tokyo 70
Amsterdam 69
São Paulo 67
Fremont 66
Hangzhou 65
Berlin 61
Nürnberg 60
Jiaxing 58
Redondo Beach 57
Brussels 56
Jakarta 54
Needham Heights 54
Nuremberg 54
Changsha 53
Rome 51
Montreal 49
Norwalk 46
Kocaeli 43
Seoul 42
Brooklyn 41
Chennai 39
Saint Petersburg 39
Boston 38
Brno 38
Denver 38
Jinan 36
Changchun 35
Phoenix 34
Lanzhou 33
Verdellino 33
Stockholm 32
Totale 56.227
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Nome #
PixFEL: Enabling technologies, building blocks and architectures for advanced X-ray pixel cameras at the next generation FELs 2.104
0.13μm CMOS technologies for analog front-end circuits in LHC detector upgrades 1.046
A 3D Vertically Integrated Deep N-Well CMOS MAPS for the SuperB Layer0 846
130 nm and 90 nm CMOS Technologies for Detector Front-end Applications 828
Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC 708
65 nm Technology for HEP: Status and Perspective 686
P-Type Silicon Strip Sensors for the new CMS Tracker at HL-LHC 621
A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs 598
The SuperB Silicon Vertex Tracker 586
A 65 nm CMOS Front-End Chip for High Density Readout of Pixel Sensors 565
3D DNW MAPS for High Resolution, Highly Efficient, Sparse Readout CMOS Detectors 545
A 3D deep n-well CMOS MAPS for the ILC vertex detector 525
Test beam demonstration of silicon microstrip modules with transverse momentum discrimination for the future CMS tracking detector 502
Monolithic pixel detectors in a 0.13 µm CMOS technology with sensor level continuous time charge amplification and shaping 501
Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade 495
2D and 3D CMOS MAPS with high performance pixel-level signal processing 494
Noise performance of 0.13 µm CMOS technologies for detector front-end applications 492
Perspectives of 65nm CMOS technologies for high performance front-end electronics 487
Precision measurement of the structure of the CMS inner tracking system using nuclear interactions 487
Characterization of SLVS Driver and Receiver in a 65 nm CMOS Technology for High Energy Physics Applications 487
Alignment of the CMS tracker with LHC and cosmic ray data 479
A 65-nm CMOS Prototype Chip With Monolithic Pixel Sensors and Fast Front-End Electronics 465
Assessment of a low-power 65 nm CMOS technology for analog front-end design 461
Beam test results for the SuperB-SVT thin striplet detector 453
Impact of lateral isolation oxides on radiation-induced noise degradation in CMOS technologies in the 100-nm regime 452
The DSSC Pixel Readout ASIC with Amplitude Digitization and Local Storage for DEPFET Sensor Matrices at the European XFEL 450
Development of the DEPFET Sensor With Signal Compression: A Large Format X-Ray Imager With Mega-Frame Readout Capability for the European XFEL 446
Description and performance of track and primary-vertex reconstruction with the CMS tracker 446
The SuperB silicon vertex tracker 442
Radiation tolerance of devices and circuits in a 3D technology based on the vertical integration of two 130-nm CMOS layers 442
Vertically integrated deep N-well CMOS MAPS with sparsification and time stamping capabilities for thin charged particle trackers 441
Forecasting noise and radiation hardness of CMOS front-end electronics beyond the 100 nm frontier 440
Vertical integration approach to the readout of pixel detectors for vertexing applications 438
The front-end chip of the SuperB SVT detector 437
Design of bandgap reference circuits in a 65 nm CMOS technology for HL-LHC applications 436
Survey of noise performances and scaling effects in deep submicrometer CMOS devices from different foundries 434
Comprehensive study of total ionizing dose damage mechanisms and their effects on noise sources in a 90 nm CMOS technology 429
Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker 428
Performance of a high accuracy injection circuit for in-pixel calibration of a large sensor matrix 427
Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology 426
FSSR2, a self-triggered low noise readout chip for silicon strip detectors 424
The PixFEL project: development of advanced X-ray pixel detectors for application at future FEL facilities 421
Mechanisms of Noise Degradation in Low Power 65 nm CMOS Transistors Exposed to Ionizing Radiation 418
2D and 3D thin pixel technologies for the Layer0 of the SuperB Silicon Vertex Tracker 410
Vertically integrated monolithic pixel sensors for charged particle tracking and biomedical imaging 409
Fast Analog Front-end for the Readout of the SuperB SVT Inner Layers 406
A 2D imager for X-ray FELs with a 65 nm CMOS readout based on per-pixel signal compression and 10 bit A/D conversion 406
A new approach to the design of monolithic active pixel detectors in 0.13 µm triple well CMOS technology 400
Front-end performance and charge collection properties of heavily irradiated DNW MAPS 397
Thin pixel development for the superB silicon vertex tracker 393
Investigating degradation mechanisms in 130nm and 90nm commercial CMOS technologies exposed to up to 100 Mrad ionizing radiation dose 389
A novel monolithic active pixel detector in a 0.13 µm triple well CMOS technology with pixel level analog processing 388
A pixelated x-ray detector for diffraction imaging at next-generation high-rate FEL sources 388
High precision injection circuit for in-pixel calibration of a large sensor matrix 385
Response of SOI bipolar transistors exposed to gamma-rays under different dose rate and bias conditions 383
Noise behavior of a 180 nm CMOS SOI technology for detector front-end electronics 378
Pixel-Level charge and current injection circuit for high accuracy calibration of the DSSC Chip at the European XFEL 378
High accuracy injection circuit for the calibration of a large pixel sensor matrix 377
Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics 374
Monolithic Active Pixel Sensors for the vertex detector at the International Linear Collider 374
The Apsel65 front-end chip for the readout of pixel sensors in the 65 nm CMOS node 372
Fermilab silicon strip readout chip for BTeV 372
Review of radiation effects leading to noise performance degradation in 100-nm scale microelectronic technologies 369
TID-Induced Degradation in Static and Noise Behavior of Sub-100 nm Multifinger Bulk NMOSFETs 368
Gate Current Noise in Ultrathin Oxide MOSFETs and Its Impact on the Performance of Analog Front-End Circuits 367
First results from the characterization of a three-dimensional deep N-well MAPS prototype for vertexing applications 366
Design criteria for low noise front-end electronics in the 0.13 µm CMOS generation 365
CMOS MAPS with fully integrated, hybrid-pixel-like analog front-end electronics 363
The readout of the LHC beam luminosity monitor: accurate shower energy measurements at a 40 MHz repetition rate 362
First prototype of a silicon microstrip detector with the data-driven readout chip FSSR2 for a tracking-based trigger system 362
Front-end electronics in a 65 nm CMOS process for high density readout of pixel sensors 361
The design of fast analog channels for the readout of strip detectors in the inner layers of the SuperB SVT 361
CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments 360
Recent developments on CMOS MAPS for the SuperB Silicon Vertex Tracker 359
R&D Progress on The SuperB Silicon Vertex Tracker 357
Investigating Degradation Mechanisms in 130 nm and 90 nm Commercial CMOS Technologies Under Extreme Radiation Conditions 356
A Front-End Channel in 65 nm CMOS for Pixel Detectors at the HL-LHC Experiment Upgrades 356
Introducing 65 nm CMOS technology in low-noise read-out of semiconductor detectors 355
MAPS with pixel level sparsified readout: from standard CMOS to vertical integration 355
65-nm CMOS Front-End Channel for Pixel Readout in the HL-LHC Radiation Environment 355
Recent results from the development of silicon detectors with integrated electronics 354
Charge Signal Processors in Sparse Readout CMOS MAPS and Hybrid Pixel Sensors for the SuperB Layer0 350
A 4096-pixel MAPS device with on-chip data sparsification 350
Performance of a DNW CMOS active pixel sensor designed for the ILC Vertex Detector 349
Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems 349
Pixel-Level Continuous-Time Analog Signal Processing for 130 nm CMOS MAPS 348
Design and Performance of Analog Circuits for DNW-MAPS in 100-nm-scale CMOS Technology 348
Proton-induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 347
Minimum noise design of charge amplifiers with CMOS processes in the 100 nm feature size range 345
Beam test performance of prototype silicon detectors for the Outer Tracker for the Phase-2 Upgrade of CMS 344
Latest results of the R&D on CMOS MAPS for the Layer0 of the SuperB SVT 344
Instrumentation for gate current noise measurements on sub-100 nm MOS transistors 343
Beam test results of different configurations of deep N-well MAPS matrices featuring in pixel full signal processing 342
TID effects in deep N-well CMOS monolithic active pixel sensors 341
Perspectives for low noise detector readout in a sub-quarter-micron CMOS SOI technology 341
Low noise design issues for analog front-end electronics in 130 nm and 90 nm CMOS technologies 341
Active pixel sensors with enhanced pixel-level analog and digital functionalities in a 2-tier 3D CMOS technology 341
Dynamic compression of the signal in a charge sensitive amplifier: from concept to design 339
Recent progress in the development of 3D deep n-well CMOS MAPS 337
CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking 337
Totale 44.504
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Categoria #
all - tutte 247.541
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 247.541
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20225.880 0 794 357 428 621 946 290 309 385 710 665 375
2022/20235.169 811 595 784 758 442 653 67 213 367 99 228 152
2023/202410.100 133 242 287 204 330 2.118 5.892 345 189 46 59 255
2024/20257.501 367 584 374 1.102 178 147 104 386 614 1.475 1.253 917
2025/202614.563 650 761 1.029 1.315 2.427 1.058 2.440 829 1.246 1.083 770 955
2026/2027837 434 403 0 0 0 0 0 0 0 0 0 0
Totale 81.631