TRAVERSI, Gianluca
 Distribuzione geografica
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Continente #
EU - Europa 39.622
NA - Nord America 15.650
AS - Asia 4.195
Continente sconosciuto - Info sul continente non disponibili 24
AF - Africa 21
SA - Sud America 16
OC - Oceania 12
Totale 59.540
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Nazione #
GB - Regno Unito 18.638
US - Stati Uniti d'America 14.702
IE - Irlanda 7.765
CN - Cina 2.963
IT - Italia 2.834
PL - Polonia 2.689
DE - Germania 1.979
RU - Federazione Russa 1.562
FR - Francia 1.455
SE - Svezia 1.293
CA - Canada 944
UA - Ucraina 572
VN - Vietnam 472
SG - Singapore 271
AT - Austria 269
FI - Finlandia 174
EU - Europa 155
KR - Corea 151
IN - India 131
NL - Olanda 124
TR - Turchia 78
BE - Belgio 58
CH - Svizzera 47
ID - Indonesia 46
ES - Italia 37
CZ - Repubblica Ceca 36
LT - Lituania 27
JP - Giappone 17
BG - Bulgaria 15
IR - Iran 12
RO - Romania 11
AU - Australia 10
BR - Brasile 10
HK - Hong Kong 8
GR - Grecia 7
PT - Portogallo 7
SC - Seychelles 7
BD - Bangladesh 6
DK - Danimarca 6
LV - Lettonia 6
TW - Taiwan 6
LB - Libano 5
DZ - Algeria 4
IL - Israele 4
BJ - Benin 3
MD - Moldavia 3
MN - Mongolia 3
MY - Malesia 3
A2 - ???statistics.table.value.countryCode.A2??? 2
BY - Bielorussia 2
CY - Cipro 2
HR - Croazia 2
IQ - Iraq 2
KZ - Kazakistan 2
LA - Repubblica Popolare Democratica del Laos 2
MU - Mauritius 2
MZ - Mozambico 2
NZ - Nuova Zelanda 2
PA - Panama 2
PE - Perù 2
PH - Filippine 2
TH - Thailandia 2
UZ - Uzbekistan 2
VE - Venezuela 2
A1 - Anonimo 1
AE - Emirati Arabi Uniti 1
AM - Armenia 1
AR - Argentina 1
EC - Ecuador 1
ET - Etiopia 1
GN - Guinea 1
GT - Guatemala 1
HU - Ungheria 1
IS - Islanda 1
KG - Kirghizistan 1
LU - Lussemburgo 1
MX - Messico 1
NG - Nigeria 1
NO - Norvegia 1
PK - Pakistan 1
SY - Repubblica araba siriana 1
Totale 59.674
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Città #
Southend 17.591
Dublin 7.717
Warsaw 2.688
Jacksonville 1.791
Chandler 1.158
Ann Arbor 787
Princeton 674
Nanjing 643
Wilmington 590
Mountain View 549
Ashburn 544
Woodbridge 542
Dearborn 515
Montréal 510
Munich 469
Dong Ket 466
Fairfield 460
Toronto 413
Boardman 408
Dalmine 383
Beijing 362
Mcallen 362
Houston 305
Milan 270
Vienna 259
Bergamo 257
Nanchang 247
Shanghai 240
Sunnyvale 239
Altamura 237
Atlanta 235
San Mateo 221
Andover 214
Rancio Valcuvia 211
Washington 205
Seattle 197
Cambridge 170
Zhengzhou 151
Moscow 144
Redwood City 122
Kunming 110
London 101
Tianjin 98
Ogden 97
Singapore 91
Shenyang 88
Kiez 86
Hebei 83
New York 77
Fremont 62
Jiaxing 59
Guangzhou 58
Pavia 58
Brussels 56
Nürnberg 56
Needham Heights 51
Hangzhou 50
Jakarta 46
Amsterdam 43
Los Angeles 42
Norwalk 42
Kocaeli 40
Jinan 38
Changsha 37
Saint Petersburg 35
Changchun 34
Sakarya 33
Lanzhou 29
San Diego 29
Chicago 27
Brno 26
Westminster 25
Segrate 24
Ningbo 23
Rome 23
Santa Clara 22
Auburn Hills 21
Hefei 21
Helsinki 21
Hounslow 21
Madrid 21
Pisa 21
Verdellino 21
Vilnius 21
Frankfurt am Main 19
Hamburg 19
Seoul 19
Kilburn 18
St Petersburg 18
Acton 17
Serra 17
Duelmen 16
Ottawa 16
Shenzhen 16
Ratingen 15
San Giuliano Milanese 15
Wuhan 15
Falls Church 14
Islington 14
Lappeenranta 14
Totale 45.875
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Nome #
PixFEL: Enabling technologies, building blocks and architectures for advanced X-ray pixel cameras at the next generation FELs 2.009
0.13μm CMOS technologies for analog front-end circuits in LHC detector upgrades 817
A 3D Vertically Integrated Deep N-Well CMOS MAPS for the SuperB Layer0 740
130 nm and 90 nm CMOS Technologies for Detector Front-end Applications 694
Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC 622
65 nm Technology for HEP: Status and Perspective 607
A prototype of pixel readout ASIC in 65 nm CMOS technology for extreme hit rate detectors at HL-LHC 544
The SuperB Silicon Vertex Tracker 485
P-Type Silicon Strip Sensors for the new CMS Tracker at HL-LHC 484
A 65 nm CMOS Front-End Chip for High Density Readout of Pixel Sensors 465
Transmission lines implementation on HDI flex circuits for the CMS tracker upgrade 465
A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs 455
Results from CHIPIX-FE0, a small-scale prototype of a new generation pixel readout ASIC in 65 nm CMOS for HL-LHC 454
3D DNW MAPS for High Resolution, Highly Efficient, Sparse Readout CMOS Detectors 426
2D and 3D CMOS MAPS with high performance pixel-level signal processing 417
Perspectives of 65nm CMOS technologies for high performance front-end electronics 416
Alignment of the CMS tracker with LHC and cosmic ray data 415
Characterization of SLVS Driver and Receiver in a 65 nm CMOS Technology for High Energy Physics Applications 404
Test beam demonstration of silicon microstrip modules with transverse momentum discrimination for the future CMS tracking detector 401
Precision measurement of the structure of the CMS inner tracking system using nuclear interactions 400
A 3D deep n-well CMOS MAPS for the ILC vertex detector 395
Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade 387
Monolithic pixel detectors in a 0.13 µm CMOS technology with sensor level continuous time charge amplification and shaping 381
Vertical integration approach to the readout of pixel detectors for vertexing applications 376
Beam test results for the SuperB-SVT thin striplet detector 374
Description and performance of track and primary-vertex reconstruction with the CMS tracker 373
A 65-nm CMOS Prototype Chip With Monolithic Pixel Sensors and Fast Front-End Electronics 368
The front-end chip of the SuperB SVT detector 361
Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker 356
Vertically integrated deep N-well CMOS MAPS with sparsification and time stamping capabilities for thin charged particle trackers 354
The SuperB silicon vertex tracker 352
Impact of lateral isolation oxides on radiation-induced noise degradation in CMOS technologies in the 100-nm regime 344
A new approach to the design of monolithic active pixel detectors in 0.13 µm triple well CMOS technology 340
Noise performance of 0.13 µm CMOS technologies for detector front-end applications 339
2D and 3D thin pixel technologies for the Layer0 of the SuperB Silicon Vertex Tracker 338
Thin pixel development for the superB silicon vertex tracker 337
Design of bandgap reference circuits in a 65 nm CMOS technology for HL-LHC applications 335
Mechanisms of Noise Degradation in Low Power 65 nm CMOS Transistors Exposed to Ionizing Radiation 325
Monolithic Active Pixel Sensors for the vertex detector at the International Linear Collider 321
The PixFEL project: development of advanced X-ray pixel detectors for application at future FEL facilities 319
Comprehensive study of total ionizing dose damage mechanisms and their effects on noise sources in a 90 nm CMOS technology 317
Vertically integrated monolithic pixel sensors for charged particle tracking and biomedical imaging 316
Radiation tolerance of devices and circuits in a 3D technology based on the vertical integration of two 130-nm CMOS layers 316
The Apsel65 front-end chip for the readout of pixel sensors in the 65 nm CMOS node 314
Forecasting noise and radiation hardness of CMOS front-end electronics beyond the 100 nm frontier 314
Fast Analog Front-end for the Readout of the SuperB SVT Inner Layers 311
Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology 310
First results from the characterization of a three-dimensional deep N-well MAPS prototype for vertexing applications 309
Monolithic Pixel Sensors for Fast Particle Trackers in a Quadruple Well CMOS Technology 308
Survey of noise performances and scaling effects in deep submicrometer CMOS devices from different foundries 305
Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics 304
CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments 303
Analog front-end for pixel sensors in a 3D CMOS technology for the SuperB Layer0 302
Response of SOI bipolar transistors exposed to gamma-rays under different dose rate and bias conditions 302
Front-end performance and charge collection properties of heavily irradiated DNW MAPS 302
Investigating degradation mechanisms in 130nm and 90nm commercial CMOS technologies exposed to up to 100 Mrad ionizing radiation dose 302
Noise behavior of a 180 nm CMOS SOI technology for detector front-end electronics 301
A novel monolithic active pixel detector in a 0.13 µm triple well CMOS technology with pixel level analog processing 301
Recent results from the development of silicon detectors with integrated electronics 299
Introducing 65 nm CMOS technology in low-noise read-out of semiconductor detectors 297
Charge signal processors in a 130 nm CMOS technology for the sparse readout of small pitch monolithic and hybrid pixel sensors 296
Monolithic pixel sensors for fast silicon vertex trackers in a quadruple well CMOS technology 296
Assessment of a low-power 65 nm CMOS technology for analog front-end design 293
A 2D imager for X-ray FELs with a 65 nm CMOS readout based on per-pixel signal compression and 10 bit A/D conversion 292
Review of radiation effects leading to noise performance degradation in 100-nm scale microelectronic technologies 290
TID-Induced Degradation in Static and Noise Behavior of Sub-100 nm Multifinger Bulk NMOSFETs 290
Active pixel sensors with enhanced pixel-level analog and digital functionalities in a 2-tier 3D CMOS technology 290
Analog front-end for monolithic and hybrid pixels in a vertical integration CMOS technology 289
A 65 nm Rad-Hard Bandgap Voltage Reference for LHC Environment 289
The readout of the LHC beam luminosity monitor: accurate shower energy measurements at a 40 MHz repetition rate 286
Design criteria for low noise front-end electronics in the 0.13 µm CMOS generation 286
The design of fast analog channels for the readout of strip detectors in the inner layers of the SuperB SVT 286
CMOS MAPS with fully integrated, hybrid-pixel-like analog front-end electronics 284
MAPS with pixel level sparsified readout: from standard CMOS to vertical integration 284
Perspectives for low noise detector readout in a sub-quarter-micron CMOS SOI technology 280
Beam test results of different configurations of deep N-well MAPS matrices featuring in pixel full signal processing 280
Recent progress in the development of 3D deep n-well CMOS MAPS 279
CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking 278
Performance of a DNW CMOS active pixel sensor designed for the ILC Vertex Detector 277
Low-power clock distribution circuits for the Macro Pixel ASIC 277
Latest results of the R&D on CMOS MAPS for the Layer0 of the SuperB SVT 277
Pixel-Level Continuous-Time Analog Signal Processing for 130 nm CMOS MAPS 276
Design and Performance of Analog Circuits for DNW-MAPS in 100-nm-scale CMOS Technology 276
Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems 275
Deep N-well CMOS MAPS with in-pixel signal processing and sparsification for the ILC vertex detector 275
A 4096-pixel MAPS device with on-chip data sparsification 275
Proton-induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 274
Front-end electronics in a 65 nm CMOS process for high density readout of pixel sensors 273
Characterization of bulk damage in CMOS MAPS with Deep N-Well collecting electrode 273
A pixelated x-ray detector for diffraction imaging at next-generation high-rate FEL sources 272
Charge Signal Processors in Sparse Readout CMOS MAPS and Hybrid Pixel Sensors for the SuperB Layer0 271
Resolution limits in 130 nm and 90 nm CMOS technologies for analog front-end applications 271
Recent developments on CMOS MAPS for the SuperB Silicon Vertex Tracker 267
R&D Progress on The SuperB Silicon Vertex Tracker 267
Minimum noise design of charge amplifiers with CMOS processes in the 100 nm feature size range 265
A quadruple well CMOS MAPS prototype for the Layer0 of the SuperB SVT 262
Investigating Degradation Mechanisms in 130 nm and 90 nm Commercial CMOS Technologies Under Extreme Radiation Conditions 262
Recent results and plans of the 3D IC consortium 262
Low noise design issues for analog front-end electronics in 130 nm and 90 nm CMOS technologies 262
Design and performance of a DNW CMOS Active Pixel Sensor for the ILC vertex detector 261
Totale 36.046
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Categoria #
all - tutte 152.814
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 152.814
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20205.358 0 0 839 853 558 463 712 317 688 275 292 361
2020/202110.006 947 574 549 636 695 856 1.104 320 1.045 1.072 1.361 847
2021/20226.594 560 831 388 441 635 969 300 310 395 724 676 365
2022/20235.255 830 616 789 782 453 635 44 230 392 103 231 150
2023/20249.955 136 259 260 215 340 2.056 5.804 351 178 55 59 242
2024/20251.090 349 587 154 0 0 0 0 0 0 0 0 0
Totale 61.112