TRAVERSI, Gianluca
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
EU - Europa 45.913
NA - Nord America 26.167
AS - Asia 10.856
Continente sconosciuto - Info sul continente non disponibili 1.689
SA - Sud America 920
AF - Africa 411
OC - Oceania 22
Totale 85.978
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 24.484
GB - Regno Unito 18.793
IE - Irlanda 7.737
RU - Federazione Russa 4.799
CN - Cina 4.607
IT - Italia 3.578
SG - Singapore 3.511
PL - Polonia 2.819
DE - Germania 2.267
FR - Francia 1.797
SE - Svezia 1.428
CA - Canada 1.211
VN - Vietnam 1.136
NL - Olanda 1.118
BR - Brasile 632
UA - Ucraina 594
AT - Austria 315
ZA - Sudafrica 288
IN - India 286
FI - Finlandia 264
HK - Hong Kong 233
KR - Corea 172
EU - Europa 154
TR - Turchia 153
BD - Bangladesh 124
JP - Giappone 96
ID - Indonesia 87
IQ - Iraq 85
AR - Argentina 78
ES - Italia 78
BE - Belgio 69
MX - Messico 62
CO - Colombia 61
LT - Lituania 59
CR - Costa Rica 58
HN - Honduras 54
MY - Malesia 52
EC - Ecuador 51
TT - Trinidad e Tobago 51
PK - Pakistan 47
CH - Svizzera 46
GT - Guatemala 45
SV - El Salvador 43
GP - Guadalupe 41
CW - ???statistics.table.value.countryCode.CW??? 38
CZ - Repubblica Ceca 38
PR - Porto Rico 37
VE - Venezuela 36
NI - Nicaragua 35
PH - Filippine 35
RO - Romania 31
SA - Arabia Saudita 26
BG - Bulgaria 22
CL - Cile 22
JM - Giamaica 22
UZ - Uzbekistan 21
JO - Giordania 18
KE - Kenya 18
AE - Emirati Arabi Uniti 17
AU - Australia 17
TW - Taiwan 17
MA - Marocco 16
PY - Paraguay 15
TN - Tunisia 15
IR - Iran 14
KZ - Kazakistan 14
IL - Israele 13
LB - Libano 13
PE - Perù 13
NP - Nepal 12
AZ - Azerbaigian 11
ET - Etiopia 11
TH - Thailandia 11
EG - Egitto 10
GR - Grecia 10
BH - Bahrain 9
PT - Portogallo 9
SC - Seychelles 9
DZ - Algeria 8
PA - Panama 7
BB - Barbados 6
DK - Danimarca 6
EE - Estonia 6
LV - Lettonia 6
MN - Mongolia 6
PS - Palestinian Territory 6
BJ - Benin 5
BO - Bolivia 5
BY - Bielorussia 5
DO - Repubblica Dominicana 5
OM - Oman 5
UY - Uruguay 5
SN - Senegal 4
AL - Albania 3
BA - Bosnia-Erzegovina 3
CI - Costa d'Avorio 3
KG - Kirghizistan 3
MD - Moldavia 3
MU - Mauritius 3
NZ - Nuova Zelanda 3
Totale 84.424
Salva come PNG Salva come JPEG
Città #
Southend 17.529
Dublin 7.687
Warsaw 2.737
Ashburn 2.569
San Jose 1.852
Jacksonville 1.800
Council Bluffs 1.665
Singapore 1.519
Moscow 1.452
Chandler 1.158
Ann Arbor 786
Princeton 675
Beijing 649
Nanjing 640
Hefei 636
Wilmington 590
Mountain View 549
Woodbridge 542
Munich 517
Dearborn 516
Montréal 510
Dong Ket 466
Toronto 464
Fairfield 461
Boardman 417
Dalmine 389
Milan 387
Mcallen 362
Houston 332
Los Angeles 318
Santa Clara 318
Bergamo 311
Atlanta 293
Vienna 282
The Dalles 277
Shanghai 270
Johannesburg 268
Nanchang 247
Sunnyvale 239
Altamura 235
Ho Chi Minh City 233
Lauterbourg 229
San Mateo 223
New York 222
Andover 214
Rancio Valcuvia 211
Washington 210
Seattle 208
Hong Kong 199
Columbus 189
Hanoi 175
Cambridge 172
Zhengzhou 157
Buffalo 156
London 142
Dallas 141
Redwood City 122
Tianjin 115
Kunming 112
Chicago 104
Frankfurt am Main 103
Ogden 96
Guangzhou 90
Rome 90
Shenyang 89
São Paulo 88
Kiez 86
Orem 84
Hebei 83
Helsinki 83
Amsterdam 73
Tokyo 68
Phoenix 67
Montreal 65
Berlin 64
Brussels 63
Fremont 62
Jiaxing 61
Pavia 60
Redondo Beach 60
Brooklyn 59
Hangzhou 57
Nürnberg 56
Jakarta 54
Needham Heights 51
Changsha 48
Nuremberg 48
Norwalk 45
San José 43
Denver 41
Naples 41
Jinan 40
Kocaeli 40
San Salvador 39
Willemstad 38
Chennai 37
Philadelphia 37
Seoul 36
Saint Petersburg 35
Changchun 34
Totale 58.862
Salva come PNG Salva come JPEG
Nome #
PixFEL: Enabling technologies, building blocks and architectures for advanced X-ray pixel cameras at the next generation FELs 2.122
0.13μm CMOS technologies for analog front-end circuits in LHC detector upgrades 1.066
A 3D Vertically Integrated Deep N-Well CMOS MAPS for the SuperB Layer0 867
130 nm and 90 nm CMOS Technologies for Detector Front-end Applications 841
Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC 719
65 nm Technology for HEP: Status and Perspective 695
A prototype of pixel readout ASIC in 65 nm CMOS technology for extreme hit rate detectors at HL-LHC 656
P-Type Silicon Strip Sensors for the new CMS Tracker at HL-LHC 636
The SuperB Silicon Vertex Tracker 609
A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs 607
A 65 nm CMOS Front-End Chip for High Density Readout of Pixel Sensors 606
3D DNW MAPS for High Resolution, Highly Efficient, Sparse Readout CMOS Detectors 565
A 3D deep n-well CMOS MAPS for the ILC vertex detector 540
Results from CHIPIX-FE0, a small-scale prototype of a new generation pixel readout ASIC in 65 nm CMOS for HL-LHC 538
Transmission lines implementation on HDI flex circuits for the CMS tracker upgrade 536
Monolithic pixel detectors in a 0.13 µm CMOS technology with sensor level continuous time charge amplification and shaping 518
Test beam demonstration of silicon microstrip modules with transverse momentum discrimination for the future CMS tracking detector 514
2D and 3D CMOS MAPS with high performance pixel-level signal processing 512
Noise performance of 0.13 µm CMOS technologies for detector front-end applications 510
Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade 509
Perspectives of 65nm CMOS technologies for high performance front-end electronics 506
Precision measurement of the structure of the CMS inner tracking system using nuclear interactions 498
Alignment of the CMS tracker with LHC and cosmic ray data 496
Characterization of SLVS Driver and Receiver in a 65 nm CMOS Technology for High Energy Physics Applications 496
A 65-nm CMOS Prototype Chip With Monolithic Pixel Sensors and Fast Front-End Electronics 482
Assessment of a low-power 65 nm CMOS technology for analog front-end design 481
Beam test results for the SuperB-SVT thin striplet detector 476
Impact of lateral isolation oxides on radiation-induced noise degradation in CMOS technologies in the 100-nm regime 462
Radiation tolerance of devices and circuits in a 3D technology based on the vertical integration of two 130-nm CMOS layers 460
Vertically integrated deep N-well CMOS MAPS with sparsification and time stamping capabilities for thin charged particle trackers 460
Description and performance of track and primary-vertex reconstruction with the CMS tracker 460
The SuperB silicon vertex tracker 459
Design of bandgap reference circuits in a 65 nm CMOS technology for HL-LHC applications 455
Vertical integration approach to the readout of pixel detectors for vertexing applications 453
Comprehensive study of total ionizing dose damage mechanisms and their effects on noise sources in a 90 nm CMOS technology 450
Forecasting noise and radiation hardness of CMOS front-end electronics beyond the 100 nm frontier 450
Survey of noise performances and scaling effects in deep submicrometer CMOS devices from different foundries 448
The front-end chip of the SuperB SVT detector 447
Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker 442
Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology 440
The PixFEL project: development of advanced X-ray pixel detectors for application at future FEL facilities 436
Mechanisms of Noise Degradation in Low Power 65 nm CMOS Transistors Exposed to Ionizing Radiation 431
Vertically integrated monolithic pixel sensors for charged particle tracking and biomedical imaging 429
2D and 3D thin pixel technologies for the Layer0 of the SuperB Silicon Vertex Tracker 421
Fast Analog Front-end for the Readout of the SuperB SVT Inner Layers 420
Analog front-end for pixel sensors in a 3D CMOS technology for the SuperB Layer0 420
A 65 nm Rad-Hard Bandgap Voltage Reference for LHC Environment 420
A 2D imager for X-ray FELs with a 65 nm CMOS readout based on per-pixel signal compression and 10 bit A/D conversion 419
A new approach to the design of monolithic active pixel detectors in 0.13 µm triple well CMOS technology 408
Front-end performance and charge collection properties of heavily irradiated DNW MAPS 406
A novel monolithic active pixel detector in a 0.13 µm triple well CMOS technology with pixel level analog processing 402
Thin pixel development for the superB silicon vertex tracker 401
Response of SOI bipolar transistors exposed to gamma-rays under different dose rate and bias conditions 400
A pixelated x-ray detector for diffraction imaging at next-generation high-rate FEL sources 400
Monolithic Active Pixel Sensors for the vertex detector at the International Linear Collider 399
CMOS MAPS with fully integrated, hybrid-pixel-like analog front-end electronics 398
Investigating degradation mechanisms in 130nm and 90nm commercial CMOS technologies exposed to up to 100 Mrad ionizing radiation dose 398
Noise behavior of a 180 nm CMOS SOI technology for detector front-end electronics 390
Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics 389
The Apsel65 front-end chip for the readout of pixel sensors in the 65 nm CMOS node 388
First results from the characterization of a three-dimensional deep N-well MAPS prototype for vertexing applications 386
Charge signal processors in a 130 nm CMOS technology for the sparse readout of small pitch monolithic and hybrid pixel sensors 383
TID-Induced Degradation in Static and Noise Behavior of Sub-100 nm Multifinger Bulk NMOSFETs 382
Review of radiation effects leading to noise performance degradation in 100-nm scale microelectronic technologies 379
CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments 378
Investigating Degradation Mechanisms in 130 nm and 90 nm Commercial CMOS Technologies Under Extreme Radiation Conditions 378
Front-end electronics in a 65 nm CMOS process for high density readout of pixel sensors 377
Recent developments on CMOS MAPS for the SuperB Silicon Vertex Tracker 377
Monolithic Pixel Sensors for Fast Particle Trackers in a Quadruple Well CMOS Technology 376
Design criteria for low noise front-end electronics in the 0.13 µm CMOS generation 375
The readout of the LHC beam luminosity monitor: accurate shower energy measurements at a 40 MHz repetition rate 374
Introducing 65 nm CMOS technology in low-noise read-out of semiconductor detectors 372
The design of fast analog channels for the readout of strip detectors in the inner layers of the SuperB SVT 369
Proton-induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 366
Development of a multi-lead ECG wearable sensor system for biomedical applications 366
Recent results from the development of silicon detectors with integrated electronics 365
Monolithic pixel sensors for fast silicon vertex trackers in a quadruple well CMOS technology 365
A Front-End Channel in 65 nm CMOS for Pixel Detectors at the HL-LHC Experiment Upgrades 365
R&D Progress on The SuperB Silicon Vertex Tracker 364
A quadruple well CMOS MAPS prototype for the Layer0 of the SuperB SVT 362
Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems 362
MAPS with pixel level sparsified readout: from standard CMOS to vertical integration 362
65-nm CMOS Front-End Channel for Pixel Readout in the HL-LHC Radiation Environment 362
Charge Signal Processors in Sparse Readout CMOS MAPS and Hybrid Pixel Sensors for the SuperB Layer0 360
A 4096-pixel MAPS device with on-chip data sparsification 360
Performance of a DNW CMOS active pixel sensor designed for the ILC Vertex Detector 359
Pixel-Level Continuous-Time Analog Signal Processing for 130 nm CMOS MAPS 359
Minimum noise design of charge amplifiers with CMOS processes in the 100 nm feature size range 359
Wearable Sensor System for Multi-lead ECG Measurement 359
Active pixel sensors with enhanced pixel-level analog and digital functionalities in a 2-tier 3D CMOS technology 358
CMOS MAPS in a homogeneous 3D process for charged particle tracking 357
Quadruple well CMOS MAPS with time-invariant processor exposed to ionizing radiation and neutrons 357
Review of radiation damage studies on DNW CMOS MAPS 357
Instrumentation for gate current noise measurements on sub-100 nm MOS transistors 357
Deep N-well CMOS MAPS with in-pixel signal processing and sparsification for the ILC vertex detector 357
Low noise design issues for analog front-end electronics in 130 nm and 90 nm CMOS technologies 357
TID effects in deep N-well CMOS monolithic active pixel sensors 356
Latest results of the R&D on CMOS MAPS for the Layer0 of the SuperB SVT 356
Analog front-end for monolithic and hybrid pixels in a vertical integration CMOS technology 355
Design and Performance of Analog Circuits for DNW-MAPS in 100-nm-scale CMOS Technology 355
Totale 46.285
Salva come PNG Salva come JPEG
Categoria #
all - tutte 257.742
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 257.742
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20224.795 0 0 0 438 631 966 299 310 393 720 673 365
2022/20235.243 826 612 787 781 453 635 44 230 392 103 230 150
2023/20249.916 136 259 260 214 340 2.049 5.777 349 177 55 59 241
2024/20257.226 349 585 372 1.116 163 120 98 372 640 1.321 1.197 893
2025/202614.360 673 761 1.051 1.454 2.395 1.025 2.252 772 1.221 1.046 694 1.016
2026/20274.527 370 626 1.316 2.215 0 0 0 0 0 0 0 0
Totale 85.978