TRAVERSI, Gianluca
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
EU - Europa 45.366
NA - Nord America 20.894
AS - Asia 10.500
SA - Sud America 804
AF - Africa 403
Continente sconosciuto - Info sul continente non disponibili 28
OC - Oceania 21
Totale 78.016
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 19.760
GB - Regno Unito 18.811
IE - Irlanda 7.771
RU - Federazione Russa 4.810
CN - Cina 4.518
SG - Singapore 3.372
IT - Italia 3.127
PL - Polonia 2.818
DE - Germania 2.253
FR - Francia 1.784
SE - Svezia 1.322
VN - Vietnam 1.126
NL - Olanda 1.115
CA - Canada 1.042
UA - Ucraina 593
BR - Brasile 587
AT - Austria 317
ZA - Sudafrica 289
IN - India 282
FI - Finlandia 264
HK - Hong Kong 200
KR - Corea 172
EU - Europa 155
TR - Turchia 151
BD - Bangladesh 100
JP - Giappone 89
IQ - Iraq 85
ID - Indonesia 77
AR - Argentina 72
ES - Italia 70
BE - Belgio 68
LT - Lituania 52
MX - Messico 51
CH - Svizzera 48
PK - Pakistan 44
MY - Malesia 42
CZ - Repubblica Ceca 38
CO - Colombia 32
RO - Romania 31
PH - Filippine 29
EC - Ecuador 28
VE - Venezuela 28
SA - Arabia Saudita 25
CL - Cile 22
UZ - Uzbekistan 21
BG - Bulgaria 20
JO - Giordania 18
AE - Emirati Arabi Uniti 16
AU - Australia 16
MA - Marocco 16
KE - Kenya 15
PY - Paraguay 15
TN - Tunisia 15
IR - Iran 14
TW - Taiwan 14
LB - Libano 12
AZ - Azerbaigian 11
ET - Etiopia 11
KZ - Kazakistan 11
PE - Perù 11
EG - Egitto 10
GR - Grecia 10
NP - Nepal 10
TH - Thailandia 10
BH - Bahrain 9
PT - Portogallo 9
DZ - Algeria 8
IL - Israele 8
SC - Seychelles 7
DK - Danimarca 6
HN - Honduras 6
JM - Giamaica 6
LV - Lettonia 6
MN - Mongolia 6
PA - Panama 6
PS - Palestinian Territory 6
BJ - Benin 5
DO - Repubblica Dominicana 5
BO - Bolivia 4
BY - Bielorussia 4
CR - Costa Rica 4
SN - Senegal 4
AL - Albania 3
BA - Bosnia-Erzegovina 3
GT - Guatemala 3
KG - Kirghizistan 3
MD - Moldavia 3
MU - Mauritius 3
NZ - Nuova Zelanda 3
OM - Oman 3
SY - Repubblica araba siriana 3
UY - Uruguay 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AM - Armenia 2
AO - Angola 2
CW - ???statistics.table.value.countryCode.CW??? 2
CY - Cipro 2
GA - Gabon 2
HR - Croazia 2
HU - Ungheria 2
Totale 78.101
Salva come PNG Salva come JPEG
Città #
Southend 17.591
Dublin 7.722
Warsaw 2.737
Ashburn 2.102
Jacksonville 1.797
Singapore 1.472
Moscow 1.458
San Jose 1.350
Chandler 1.158
Ann Arbor 788
Princeton 674
Nanjing 645
Hefei 636
Beijing 622
Wilmington 591
Mountain View 549
Woodbridge 542
Munich 517
Dearborn 515
Montréal 510
Dong Ket 466
Fairfield 460
Toronto 442
Boardman 409
Dalmine 388
Mcallen 362
Milan 337
Houston 314
Bergamo 307
Vienna 284
The Dalles 276
Johannesburg 269
Los Angeles 268
Atlanta 264
Shanghai 261
Nanchang 247
Sunnyvale 239
Altamura 237
Lauterbourg 230
Ho Chi Minh City 227
San Mateo 223
Andover 214
Rancio Valcuvia 211
Washington 206
Seattle 204
New York 180
Hanoi 174
Hong Kong 173
Cambridge 170
Zhengzhou 157
Buffalo 147
London 140
Santa Clara 130
Redwood City 122
Tianjin 114
Kunming 112
Dallas 107
Frankfurt am Main 100
Ogden 97
Guangzhou 90
Shenyang 89
Kiez 86
Hebei 83
Helsinki 83
Orem 80
Chicago 78
São Paulo 76
Amsterdam 72
Tokyo 65
Berlin 64
Brussels 62
Fremont 62
Jiaxing 61
Pavia 60
Redondo Beach 60
Council Bluffs 57
Nürnberg 56
Hangzhou 54
Jakarta 54
Needham Heights 51
Nuremberg 46
Changsha 45
Norwalk 42
Montreal 41
Jinan 40
Kocaeli 40
Brooklyn 38
Rome 37
Chennai 36
Seoul 36
Saint Petersburg 35
Changchun 34
Hamburg 33
Sakarya 33
Denver 30
Istanbul 29
Kuala Lumpur 29
Lanzhou 29
San Diego 29
Verdellino 29
Totale 55.398
Salva come PNG Salva come JPEG
Nome #
PixFEL: Enabling technologies, building blocks and architectures for advanced X-ray pixel cameras at the next generation FELs 2.094
0.13μm CMOS technologies for analog front-end circuits in LHC detector upgrades 1.021
A 3D Vertically Integrated Deep N-Well CMOS MAPS for the SuperB Layer0 829
130 nm and 90 nm CMOS Technologies for Detector Front-end Applications 817
Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC 701
65 nm Technology for HEP: Status and Perspective 672
A prototype of pixel readout ASIC in 65 nm CMOS technology for extreme hit rate detectors at HL-LHC 628
P-Type Silicon Strip Sensors for the new CMS Tracker at HL-LHC 602
The SuperB Silicon Vertex Tracker 576
A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs 575
A 65 nm CMOS Front-End Chip for High Density Readout of Pixel Sensors 549
3D DNW MAPS for High Resolution, Highly Efficient, Sparse Readout CMOS Detectors 520
Results from CHIPIX-FE0, a small-scale prototype of a new generation pixel readout ASIC in 65 nm CMOS for HL-LHC 519
Transmission lines implementation on HDI flex circuits for the CMS tracker upgrade 505
A 3D deep n-well CMOS MAPS for the ILC vertex detector 501
Monolithic pixel detectors in a 0.13 µm CMOS technology with sensor level continuous time charge amplification and shaping 488
Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade 487
Test beam demonstration of silicon microstrip modules with transverse momentum discrimination for the future CMS tracking detector 486
2D and 3D CMOS MAPS with high performance pixel-level signal processing 483
Precision measurement of the structure of the CMS inner tracking system using nuclear interactions 481
Noise performance of 0.13 µm CMOS technologies for detector front-end applications 476
Characterization of SLVS Driver and Receiver in a 65 nm CMOS Technology for High Energy Physics Applications 475
Alignment of the CMS tracker with LHC and cosmic ray data 473
Perspectives of 65nm CMOS technologies for high performance front-end electronics 472
A 65-nm CMOS Prototype Chip With Monolithic Pixel Sensors and Fast Front-End Electronics 446
Assessment of a low-power 65 nm CMOS technology for analog front-end design 445
Beam test results for the SuperB-SVT thin striplet detector 444
Impact of lateral isolation oxides on radiation-induced noise degradation in CMOS technologies in the 100-nm regime 440
Vertically integrated deep N-well CMOS MAPS with sparsification and time stamping capabilities for thin charged particle trackers 437
Description and performance of track and primary-vertex reconstruction with the CMS tracker 434
The front-end chip of the SuperB SVT detector 433
The SuperB silicon vertex tracker 430
Vertical integration approach to the readout of pixel detectors for vertexing applications 427
Design of bandgap reference circuits in a 65 nm CMOS technology for HL-LHC applications 425
Radiation tolerance of devices and circuits in a 3D technology based on the vertical integration of two 130-nm CMOS layers 425
Forecasting noise and radiation hardness of CMOS front-end electronics beyond the 100 nm frontier 425
Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker 422
Survey of noise performances and scaling effects in deep submicrometer CMOS devices from different foundries 416
The PixFEL project: development of advanced X-ray pixel detectors for application at future FEL facilities 413
Comprehensive study of total ionizing dose damage mechanisms and their effects on noise sources in a 90 nm CMOS technology 412
Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology 412
Mechanisms of Noise Degradation in Low Power 65 nm CMOS Transistors Exposed to Ionizing Radiation 406
Fast Analog Front-end for the Readout of the SuperB SVT Inner Layers 400
2D and 3D thin pixel technologies for the Layer0 of the SuperB Silicon Vertex Tracker 399
Vertically integrated monolithic pixel sensors for charged particle tracking and biomedical imaging 399
A new approach to the design of monolithic active pixel detectors in 0.13 µm triple well CMOS technology 396
Front-end performance and charge collection properties of heavily irradiated DNW MAPS 391
A 65 nm Rad-Hard Bandgap Voltage Reference for LHC Environment 384
Thin pixel development for the superB silicon vertex tracker 382
A novel monolithic active pixel detector in a 0.13 µm triple well CMOS technology with pixel level analog processing 380
A 2D imager for X-ray FELs with a 65 nm CMOS readout based on per-pixel signal compression and 10 bit A/D conversion 377
Response of SOI bipolar transistors exposed to gamma-rays under different dose rate and bias conditions 376
Investigating degradation mechanisms in 130nm and 90nm commercial CMOS technologies exposed to up to 100 Mrad ionizing radiation dose 376
Noise behavior of a 180 nm CMOS SOI technology for detector front-end electronics 372
A pixelated x-ray detector for diffraction imaging at next-generation high-rate FEL sources 366
Monolithic Active Pixel Sensors for the vertex detector at the International Linear Collider 364
The Apsel65 front-end chip for the readout of pixel sensors in the 65 nm CMOS node 363
Analog front-end for pixel sensors in a 3D CMOS technology for the SuperB Layer0 362
TID-Induced Degradation in Static and Noise Behavior of Sub-100 nm Multifinger Bulk NMOSFETs 362
First results from the characterization of a three-dimensional deep N-well MAPS prototype for vertexing applications 360
CMOS MAPS with fully integrated, hybrid-pixel-like analog front-end electronics 359
Design criteria for low noise front-end electronics in the 0.13 µm CMOS generation 358
Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics 357
Charge signal processors in a 130 nm CMOS technology for the sparse readout of small pitch monolithic and hybrid pixel sensors 356
Review of radiation effects leading to noise performance degradation in 100-nm scale microelectronic technologies 354
Front-end electronics in a 65 nm CMOS process for high density readout of pixel sensors 353
CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments 353
The design of fast analog channels for the readout of strip detectors in the inner layers of the SuperB SVT 353
Monolithic Pixel Sensors for Fast Particle Trackers in a Quadruple Well CMOS Technology 353
The readout of the LHC beam luminosity monitor: accurate shower energy measurements at a 40 MHz repetition rate 351
MAPS with pixel level sparsified readout: from standard CMOS to vertical integration 351
Development of a multi-lead ECG wearable sensor system for biomedical applications 350
Recent results from the development of silicon detectors with integrated electronics 349
Monolithic pixel sensors for fast silicon vertex trackers in a quadruple well CMOS technology 347
Investigating Degradation Mechanisms in 130 nm and 90 nm Commercial CMOS Technologies Under Extreme Radiation Conditions 346
R&D Progress on The SuperB Silicon Vertex Tracker 346
Wearable Sensor System for Multi-lead ECG Measurement 346
Pixel-Level Continuous-Time Analog Signal Processing for 130 nm CMOS MAPS 345
Charge Signal Processors in Sparse Readout CMOS MAPS and Hybrid Pixel Sensors for the SuperB Layer0 344
Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems 342
Introducing 65 nm CMOS technology in low-noise read-out of semiconductor detectors 342
Design and Performance of Analog Circuits for DNW-MAPS in 100-nm-scale CMOS Technology 342
Recent developments on CMOS MAPS for the SuperB Silicon Vertex Tracker 341
Proton-induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 339
A 4096-pixel MAPS device with on-chip data sparsification 339
Minimum noise design of charge amplifiers with CMOS processes in the 100 nm feature size range 338
Low noise design issues for analog front-end electronics in 130 nm and 90 nm CMOS technologies 338
Latest results of the R&D on CMOS MAPS for the Layer0 of the SuperB SVT 338
A quadruple well CMOS MAPS prototype for the Layer0 of the SuperB SVT 337
Performance of a DNW CMOS active pixel sensor designed for the ILC Vertex Detector 336
Beam test results of different configurations of deep N-well MAPS matrices featuring in pixel full signal processing 335
Active pixel sensors with enhanced pixel-level analog and digital functionalities in a 2-tier 3D CMOS technology 335
Beam test performance of prototype silicon detectors for the Outer Tracker for the Phase-2 Upgrade of CMS 335
Instrumentation for gate current noise measurements on sub-100 nm MOS transistors 334
Perspectives for low noise detector readout in a sub-quarter-micron CMOS SOI technology 333
Analog front-end for monolithic and hybrid pixels in a vertical integration CMOS technology 333
Review of radiation damage studies on DNW CMOS MAPS 331
TID effects in deep N-well CMOS monolithic active pixel sensors 329
CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking 328
CMOS MAPS in a homogeneous 3D process for charged particle tracking 327
Totale 43.654
Salva come PNG Salva come JPEG
Categoria #
all - tutte 224.634
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 224.634
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20213.280 0 0 0 0 0 0 0 0 0 1.072 1.361 847
2021/20226.594 560 831 388 441 635 969 300 310 395 724 676 365
2022/20235.255 830 616 789 782 453 635 44 230 392 103 231 150
2023/20249.955 136 259 260 215 340 2.056 5.804 351 178 55 59 242
2024/20257.242 349 587 372 1.118 163 120 99 373 642 1.323 1.201 895
2025/202612.381 674 763 1.055 1.456 2.400 1.027 2.257 772 1.223 754 0 0
Totale 79.645