TRAVERSI, Gianluca
 Distribuzione geografica
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Continente #
EU - Europa 44.868
NA - Nord America 18.370
AS - Asia 8.391
SA - Sud America 613
AF - Africa 329
Continente sconosciuto - Info sul continente non disponibili 25
OC - Oceania 19
Totale 72.615
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Nazione #
GB - Regno Unito 18.758
US - Stati Uniti d'America 17.283
IE - Irlanda 7.768
RU - Federazione Russa 4.801
CN - Cina 4.172
IT - Italia 3.078
PL - Polonia 2.809
SG - Singapore 2.695
DE - Germania 2.217
FR - Francia 1.531
SE - Svezia 1.318
NL - Olanda 1.095
CA - Canada 1.024
VN - Vietnam 656
UA - Ucraina 586
BR - Brasile 496
AT - Austria 315
ZA - Sudafrica 275
FI - Finlandia 233
IN - India 180
KR - Corea 165
EU - Europa 155
TR - Turchia 120
BE - Belgio 66
ES - Italia 66
JP - Giappone 64
HK - Hong Kong 58
ID - Indonesia 58
LT - Lituania 52
CH - Svizzera 47
AR - Argentina 45
BD - Bangladesh 43
MX - Messico 39
CZ - Repubblica Ceca 38
IQ - Iraq 28
RO - Romania 27
MY - Malesia 26
BG - Bulgaria 18
CO - Colombia 15
EC - Ecuador 15
AE - Emirati Arabi Uniti 14
AU - Australia 14
IR - Iran 14
PK - Pakistan 14
TW - Taiwan 11
VE - Venezuela 11
UZ - Uzbekistan 10
GR - Grecia 9
PE - Perù 9
PT - Portogallo 9
CL - Cile 8
MA - Marocco 8
PY - Paraguay 8
KE - Kenya 7
SA - Arabia Saudita 7
SC - Seychelles 7
DK - Danimarca 6
JO - Giordania 6
LV - Lettonia 6
DO - Repubblica Dominicana 5
LB - Libano 5
MN - Mongolia 5
AZ - Azerbaigian 4
BH - Bahrain 4
BJ - Benin 4
DZ - Algeria 4
IL - Israele 4
NP - Nepal 4
PA - Panama 4
PH - Filippine 4
TH - Thailandia 4
TN - Tunisia 4
BY - Bielorussia 3
EG - Egitto 3
GT - Guatemala 3
KG - Kirghizistan 3
MD - Moldavia 3
NZ - Nuova Zelanda 3
UY - Uruguay 3
A2 - ???statistics.table.value.countryCode.A2??? 2
CR - Costa Rica 2
CY - Cipro 2
ET - Etiopia 2
HN - Honduras 2
HR - Croazia 2
JM - Giamaica 2
KZ - Kazakistan 2
LA - Repubblica Popolare Democratica del Laos 2
MU - Mauritius 2
MZ - Mozambico 2
NO - Norvegia 2
PS - Palestinian Territory 2
A1 - Anonimo 1
AM - Armenia 1
AO - Angola 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BO - Bolivia 1
BW - Botswana 1
CG - Congo 1
Totale 72.723
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Città #
Southend 17.591
Dublin 7.719
Warsaw 2.730
Jacksonville 1.793
Moscow 1.458
Ashburn 1.286
Singapore 1.159
Chandler 1.158
Ann Arbor 787
Princeton 674
Nanjing 644
Hefei 636
Beijing 607
Wilmington 591
Mountain View 549
Woodbridge 542
Munich 517
Dearborn 515
Montréal 510
Dong Ket 466
Fairfield 460
Toronto 435
Boardman 409
Dalmine 386
Mcallen 362
Milan 334
Houston 313
Bergamo 304
Vienna 282
The Dalles 276
Johannesburg 265
Atlanta 259
Shanghai 251
Nanchang 247
Sunnyvale 239
Altamura 237
Los Angeles 236
San Mateo 221
Andover 214
Rancio Valcuvia 211
Washington 206
Seattle 204
New York 175
Cambridge 170
Zhengzhou 157
Buffalo 142
London 133
Redwood City 122
Kunming 111
Tianjin 107
Dallas 105
Ogden 97
Santa Clara 91
Shenyang 89
Kiez 86
Hebei 83
Guangzhou 75
Frankfurt am Main 74
Chicago 73
Ho Chi Minh City 73
São Paulo 65
Berlin 63
Brussels 62
Fremont 62
Jiaxing 61
Amsterdam 60
Pavia 60
Redondo Beach 60
Helsinki 57
Nürnberg 56
Hangzhou 52
Hong Kong 52
Needham Heights 51
Hanoi 48
Jakarta 48
Tokyo 47
Changsha 45
Nuremberg 44
Norwalk 42
Kocaeli 40
Jinan 39
Orem 38
Brooklyn 37
Saint Petersburg 35
Changchun 34
Hamburg 33
Rome 33
Sakarya 33
Montreal 32
Seoul 32
Lanzhou 29
San Diego 29
Verdellino 29
Pisa 28
Denver 27
Brno 26
Stockholm 26
Boston 25
Ningbo 25
Phoenix 25
Totale 51.936
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Nome #
PixFEL: Enabling technologies, building blocks and architectures for advanced X-ray pixel cameras at the next generation FELs 2.069
0.13μm CMOS technologies for analog front-end circuits in LHC detector upgrades 969
A 3D Vertically Integrated Deep N-Well CMOS MAPS for the SuperB Layer0 813
130 nm and 90 nm CMOS Technologies for Detector Front-end Applications 773
Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC 687
65 nm Technology for HEP: Status and Perspective 656
A prototype of pixel readout ASIC in 65 nm CMOS technology for extreme hit rate detectors at HL-LHC 608
P-Type Silicon Strip Sensors for the new CMS Tracker at HL-LHC 574
The SuperB Silicon Vertex Tracker 555
A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs 547
A 65 nm CMOS Front-End Chip for High Density Readout of Pixel Sensors 528
Results from CHIPIX-FE0, a small-scale prototype of a new generation pixel readout ASIC in 65 nm CMOS for HL-LHC 505
Transmission lines implementation on HDI flex circuits for the CMS tracker upgrade 494
3D DNW MAPS for High Resolution, Highly Efficient, Sparse Readout CMOS Detectors 493
A 3D deep n-well CMOS MAPS for the ILC vertex detector 472
Test beam demonstration of silicon microstrip modules with transverse momentum discrimination for the future CMS tracking detector 469
Precision measurement of the structure of the CMS inner tracking system using nuclear interactions 468
Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade 465
2D and 3D CMOS MAPS with high performance pixel-level signal processing 464
Alignment of the CMS tracker with LHC and cosmic ray data 461
Characterization of SLVS Driver and Receiver in a 65 nm CMOS Technology for High Energy Physics Applications 461
Perspectives of 65nm CMOS technologies for high performance front-end electronics 455
Monolithic pixel detectors in a 0.13 µm CMOS technology with sensor level continuous time charge amplification and shaping 449
Noise performance of 0.13 µm CMOS technologies for detector front-end applications 432
Beam test results for the SuperB-SVT thin striplet detector 424
A 65-nm CMOS Prototype Chip With Monolithic Pixel Sensors and Fast Front-End Electronics 420
Vertical integration approach to the readout of pixel detectors for vertexing applications 416
Impact of lateral isolation oxides on radiation-induced noise degradation in CMOS technologies in the 100-nm regime 414
Description and performance of track and primary-vertex reconstruction with the CMS tracker 409
The front-end chip of the SuperB SVT detector 409
The SuperB silicon vertex tracker 402
Vertically integrated deep N-well CMOS MAPS with sparsification and time stamping capabilities for thin charged particle trackers 401
Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker 400
Assessment of a low-power 65 nm CMOS technology for analog front-end design 396
Comprehensive study of total ionizing dose damage mechanisms and their effects on noise sources in a 90 nm CMOS technology 390
Design of bandgap reference circuits in a 65 nm CMOS technology for HL-LHC applications 389
Mechanisms of Noise Degradation in Low Power 65 nm CMOS Transistors Exposed to Ionizing Radiation 388
Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology 388
Radiation tolerance of devices and circuits in a 3D technology based on the vertical integration of two 130-nm CMOS layers 387
Forecasting noise and radiation hardness of CMOS front-end electronics beyond the 100 nm frontier 386
2D and 3D thin pixel technologies for the Layer0 of the SuperB Silicon Vertex Tracker 385
The PixFEL project: development of advanced X-ray pixel detectors for application at future FEL facilities 380
A new approach to the design of monolithic active pixel detectors in 0.13 µm triple well CMOS technology 378
Survey of noise performances and scaling effects in deep submicrometer CMOS devices from different foundries 377
Thin pixel development for the superB silicon vertex tracker 367
Fast Analog Front-end for the Readout of the SuperB SVT Inner Layers 365
Vertically integrated monolithic pixel sensors for charged particle tracking and biomedical imaging 363
A 65 nm Rad-Hard Bandgap Voltage Reference for LHC Environment 362
Front-end performance and charge collection properties of heavily irradiated DNW MAPS 354
Noise behavior of a 180 nm CMOS SOI technology for detector front-end electronics 353
Monolithic Active Pixel Sensors for the vertex detector at the International Linear Collider 353
A 2D imager for X-ray FELs with a 65 nm CMOS readout based on per-pixel signal compression and 10 bit A/D conversion 351
The Apsel65 front-end chip for the readout of pixel sensors in the 65 nm CMOS node 350
Investigating degradation mechanisms in 130nm and 90nm commercial CMOS technologies exposed to up to 100 Mrad ionizing radiation dose 349
A novel monolithic active pixel detector in a 0.13 µm triple well CMOS technology with pixel level analog processing 347
Response of SOI bipolar transistors exposed to gamma-rays under different dose rate and bias conditions 346
Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics 341
Analog front-end for pixel sensors in a 3D CMOS technology for the SuperB Layer0 340
CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments 340
Review of radiation effects leading to noise performance degradation in 100-nm scale microelectronic technologies 340
Monolithic Pixel Sensors for Fast Particle Trackers in a Quadruple Well CMOS Technology 340
First results from the characterization of a three-dimensional deep N-well MAPS prototype for vertexing applications 338
A pixelated x-ray detector for diffraction imaging at next-generation high-rate FEL sources 337
Development of a multi-lead ECG wearable sensor system for biomedical applications 334
Recent results from the development of silicon detectors with integrated electronics 333
Wearable Sensor System for Multi-lead ECG Measurement 331
Introducing 65 nm CMOS technology in low-noise read-out of semiconductor detectors 330
Monolithic pixel sensors for fast silicon vertex trackers in a quadruple well CMOS technology 329
Design criteria for low noise front-end electronics in the 0.13 µm CMOS generation 328
TID-Induced Degradation in Static and Noise Behavior of Sub-100 nm Multifinger Bulk NMOSFETs 328
MAPS with pixel level sparsified readout: from standard CMOS to vertical integration 328
Charge signal processors in a 130 nm CMOS technology for the sparse readout of small pitch monolithic and hybrid pixel sensors 327
R&D Progress on The SuperB Silicon Vertex Tracker 327
Latest results of the R&D on CMOS MAPS for the Layer0 of the SuperB SVT 322
CMOS MAPS with fully integrated, hybrid-pixel-like analog front-end electronics 321
The readout of the LHC beam luminosity monitor: accurate shower energy measurements at a 40 MHz repetition rate 321
The design of fast analog channels for the readout of strip detectors in the inner layers of the SuperB SVT 321
A 4096-pixel MAPS device with on-chip data sparsification 321
Charge Signal Processors in Sparse Readout CMOS MAPS and Hybrid Pixel Sensors for the SuperB Layer0 320
Perspectives for low noise detector readout in a sub-quarter-micron CMOS SOI technology 320
Front-end electronics in a 65 nm CMOS process for high density readout of pixel sensors 319
Recent developments on CMOS MAPS for the SuperB Silicon Vertex Tracker 319
Beam test performance of prototype silicon detectors for the Outer Tracker for the Phase-2 Upgrade of CMS 319
Performance of a DNW CMOS active pixel sensor designed for the ILC Vertex Detector 316
Analog front-end for monolithic and hybrid pixels in a vertical integration CMOS technology 315
Recent progress in the development of 3D deep n-well CMOS MAPS 314
Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems 314
Pixel-Level Continuous-Time Analog Signal Processing for 130 nm CMOS MAPS 314
Active pixel sensors with enhanced pixel-level analog and digital functionalities in a 2-tier 3D CMOS technology 313
Investigating Degradation Mechanisms in 130 nm and 90 nm Commercial CMOS Technologies Under Extreme Radiation Conditions 312
Beam test results of different configurations of deep N-well MAPS matrices featuring in pixel full signal processing 312
Design and Performance of Analog Circuits for DNW-MAPS in 100-nm-scale CMOS Technology 311
CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking 308
Low noise design issues for analog front-end electronics in 130 nm and 90 nm CMOS technologies 307
65-nm CMOS Front-End Channel for Pixel Readout in the HL-LHC Radiation Environment 307
Characterization of bulk damage in CMOS MAPS with Deep N-Well collecting electrode 306
Proton-induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 305
Carbon nanotubes textile coating for the development of wearable sensors 305
A quadruple well CMOS MAPS prototype for the Layer0 of the SuperB SVT 304
Quadruple well CMOS MAPS with time-invariant processor exposed to ionizing radiation and neutrons 304
Totale 41.207
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Categoria #
all - tutte 215.561
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 215.561
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20216.605 0 0 0 0 0 856 1.104 320 1.045 1.072 1.361 847
2021/20226.594 560 831 388 441 635 969 300 310 395 724 676 365
2022/20235.255 830 616 789 782 453 635 44 230 392 103 231 150
2023/20249.955 136 259 260 215 340 2.056 5.804 351 178 55 59 242
2024/20257.242 349 587 372 1.118 163 120 99 373 642 1.323 1.201 895
2025/20266.977 674 763 1.055 1.456 2.400 629 0 0 0 0 0 0
Totale 74.241